SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V (D-S), 175C MOSFET V(BR)DSS (V) rDS(on) () ID (A) 60 0.014 70a TO-220AB D TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N06-14 Top View N-Channel MOSFET SUP70N06-14 Parameter Symbol Limit Unit VGS 20 V Gate-Source Voltage 70a TC = 25C Continuous Drain Current (TJ = 175C) ID TC = 100C A Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH 160 IAR 70 EAR 180 mJ 142c TC = 25C (TO-220AB and TO-263) PD TA = 25C (TO-263)d Operating Junction and Storage Temperature Range 49 TJ, Tstg W 3.7 –55 to 175 C Limit Unit Parameter Symbol PCB Mount (TO-263)d Junction-to-Ambient 40 RthJA Free Air (TO-220AB) Junction-to-Case 62.5 RthJC C/W 1.05 Notes: a. Package limited. b. Duty cycle 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70291 S-57253—Rev. C, 24-Feb-98 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB70N06-14 Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, IDS = 1 mA 2.0 3.0 4.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A 0.014 rDS(on) VGS = 10 V, ID = 30 A, TJ = 125C 0.023 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V "100 VDS = 60 V, VGS = 0 V, TJ = 175C a D i S Drain-Source On-State O S Resistance R i gfs VDS = 15 V, ID = 30 A mA A 150 70 A VGS = 10 V, ID = 30 A, TJ = 175C Forward Transconductancea nA W 0.028 25 50 S Dynamicb Input Capacitance Ciss 2400 Output Capacitance Coss Reversen Transfer Capacitance Crss 130 Total Gate Chargec Qg 45 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 490 70 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 16 Turn-On Delay Timec td(on) 13 30 Rise Timec Turn-Off Delay Timec Fall Timec VDS = 30 V, VGS = 10 V, V ID = 60 A tr VDD = 30 V,, RL = 0.47 W 11 30 td(off) ID ] 60 A, VGEN = 10 V, RG = 2.5 W 30 60 11 25 tf Source-Drain Diode Ratings and Characteristics (TC = Continuous Current nC C 12 ns 25C)b Is 70 Pulsed Current ISM 160 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 70 A, VGS = 0 V trr IRM(REC) Qrr 1.4 47 IF = 60 A, A di/dt di/d = 100 A/ms A/ V ns 3.5 A 0.08 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70291 S-57253—Rev. C, 24-Feb-98 SUP/SUB70N06-14 Vishay Siliconix Output Characteristics Transfer Characteristics 100 150 VGS = 10, 9, 8 V 7V 80 I D – Drain Current (A) I D – Drain Current (A) 125 6V 100 75 50 5V 25 60 40 TC = 125C 20 25C 4V –55C 0 0 0 2 4 6 8 0 10 2 VDS – Drain-to-Source Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.0200 TC = –55C 0.0175 60 25C 50 125C r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 70 40 30 20 10 0 0.0150 VGS = 10 V 0.0125 VGS = 20 V 0.0100 0.0075 0.005 0 10 20 30 40 50 60 0 10 20 VGS – Gate-to-Source Voltage (V) 40 50 60 70 ID – Drain Current (A) Capacitance Gate Charge 3500 20 V GS – Gate-to-Source Voltage (V) 3000 C – Capacitance (pF) 30 Ciss 2500 2000 1500 1000 Coss Crss 500 0 VDS = 30 V ID = 60 A 16 12 8 4 0 0 10 20 30 VDS – Drain-to-Source Voltage (V) Document Number: 70291 S-57253—Rev. C, 24-Feb-98 40 0 20 40 60 80 100 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB70N06-14 Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TC = 150C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TC = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0.25 TJ – Junction Temperature (C) 0.50 0.75 1.00 1.25 1.50 VSD – Source-to-Drain Voltage (V) 100 500 80 100 I D – Drain Current (A) I D – Drain Current (A) Maximum Avalanche and Drain Current vs. Case Temperature 60 40 Safe Operating Area Limited by rDS(on) 1 ms 10 ms 1 0 25 50 75 100 125 150 100 ms, 1 s, dc TC = 25C Single Pulse 20 0 100 ms 10 0.1 175 0.1 TC – Case Temperature (C) 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70291 S-57253—Rev. C, 24-Feb-98 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.