EON EN29SL160B-90MC

EN29SL160
EN29SL160
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 1.8 Volt-only
FEATURES
• Single power supply operation
- Full voltage range:1.65-2.2 volt for read and
write operations.
- Regulated voltage range: 1.8-2.2 volt read
and write operations
• High performance
- Access times as fast as 90 ns
• High performance program/erase speed
- Byte/Word program time: 5µs/7µs typical
- Sector erase time: 500ms typical
• JEDEC Standard Embedded Erase and
Program Algorithms
• JEDEC standard DATA# polling and toggle
bits feature
• Low power consumption (typical values
at 5 MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 0.2 μA typical standby current
• Unlock Bypass Program command supported
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Flexible Sector Architecture:
- Eight 8-Kbyte and thirty-one 64-Kbyte sectors
(byte mode)
- Eight 4-Kword and thirty-one 32-Kword
sectors (word mode)
• WP#/ACC Input pin:
- Write protect (WP#) function allows protection
of two outermost boot sectors, regardless of
sector protect status
- Acceleration (ACC) function acceleration
program timing.
• Sector protection:
- Hardware locking of sectors to prevent
program or erase operations within individual
sectors
- Additionally, temporary Sector Unprotect
allows code changes in previously locked
sectors.
• Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
• Low Vcc write inhibit < 1.2V
• Minimum 100K endurance cycle
•
-
Package Options
48-pin TSOP (Type 1)
48-ball 6mm x 8mm TFBGA
48-ball 5mm x 6mm WFBGA
48-ball 5mm x 6mm WLGA
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN29SL160 is an 16-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 5µs.
The EN29SL160 features 1.8V voltage read and write operation, with access time as fast as 90ns to
eliminate the need for WAIT statements in high-performance microprocessor systems.
The EN29SL160 has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RESET#
NC
WP#/ACC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard
TSOP
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
EN29SL160
WFBGA and WLGA
Top View, Balls Facing Down
A6
A2
A5
A1
A4
A0
A3
CE#
A2
VSS
B6
A4
B5
A3
B4
A5
B3
DQ8
B2
OE#
B1
DQ0
C6
A6
C5
A7
D6
F6
E6
A17
NC
NC
G6
WE#
H6
Reset#
H5
D5
WP
WP#/ACC
#/A
NC
C4
DQ1
A10
I3
DQ10
C1
I5
A8
C3
DQ9
A9
I4
A18
C2
I6
DQ4
H2
D2
NC
A19
D1
F1
E1
DQ2
VDD
DQ3
G1
DQ12
H1
DQ13
I2
DQ5
I1
DQ14
J6
A11
J5
A13
J4
A12
J3
DQ11
J2
DQ6
J1
DQ15
K5
A14
K4
A15
K3
A16
K2
DQ7
K1
VSS
Notes:
1.
2.
RY/BY#, Byte# are not available for WFBGA package.
It is organized as 1M x 16 (16Mbit)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
TABLE 1. PIN DESCRIPTION
Pin Name
FIGURE 1. LOGIC DIAGRAM
Function
A0-A19
20 Addresses
DQ0-DQ14
15 Data Inputs/Outputs
DQ15 / A-1
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
CE#
Chip Enable
OE#
Output Enable
RESET#
Hardware Reset Pin
RY/BY#
Ready/Busy Output
WE#
Write Enable
WP#/ACC
Hardware write protect/acceleration pin
Vcc
Supply Voltage
(1.65-2.2V)
Vss
Ground
NC
Not Connected to anything
BYTE#
Byte/Word Mode
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Table 2. Top Boot Sector Address Tables (EN29SL160T)
Sector Size
(Kbytes/
Kwords)
Address Range (in hexadecimal)
64/32
Byte mode (x8)
000000–00FFFF
Word Mode
(x16)
00000–07FFF
X
64/32
010000–01FFFF
08000–0FFFF
X
64/32
020000–02FFFF
10000–17FFF
X
X
64/32
030000–03FFFF
18000–1FFFF
X
X
X
64/32
040000–04FFFF
20000–27FFF
1
X
X
X
64/32
050000–05FFFF
28000–2FFFF
1
0
X
X
X
64/32
060000–06FFFF
30000–37FFF
1
1
X
X
X
64/32
070000–07FFFF
38000–3FFFF
0
0
0
X
X
X
64/32
080000–08FFFF
40000–47FFF
1
0
0
1
X
X
X
64/32
090000–09FFFF
48000–4FFFF
0
1
0
1
0
X
X
X
64/32
0A0000–0AFFFF
50000–57FFF
0
1
0
1
1
X
X
X
64/32
0B0000–0BFFFF
58000–5FFFF
SA12
0
1
1
0
0
X
X
X
64/32
0C0000–0CFFFF
60000–67FFF
SA13
0
1
1
0
1
X
X
X
64/32
0D0000–0DFFFF
68000–6FFFF
SA14
0
1
1
1
0
X
X
X
64/32
0E0000–0EFFFF
70000–77FFF
SA15
0
1
1
1
1
X
X
X
64/32
0F0000–0FFFFF
78000–7FFFF
SA16
1
0
0
0
0
X
X
X
64/32
100000–10FFFF
80000–87FFF
SA17
1
0
0
0
1
X
X
X
64/32
110000–11FFFF
88000–8FFFF
SA18
1
0
0
1
0
X
X
X
64/32
120000–12FFFF
90000–97FFF
SA19
1
0
0
1
1
X
X
X
64/32
130000–13FFFF
98000–9FFFF
SA20
1
0
1
0
0
X
X
X
64/32
140000–14FFFF
A0000–A7FFF
SA21
1
0
1
0
1
X
X
X
64/32
150000–15FFFF
A8000–AFFFF
SA22
1
0
1
1
0
X
X
X
64/32
160000–16FFFF
B0000–B7FFF
SA23
1
0
1
1
1
X
X
X
64/32
170000–17FFFF
B8000–BFFFF
SA24
1
1
0
0
0
X
X
X
64/32
180000–18FFFF
C0000–C7FFF
SA25
1
1
0
0
1
X
X
X
64/32
190000–19FFFF
C8000–CFFFF
SA26
1
1
0
1
0
X
X
X
64/32
1A0000–1AFFFF
D0000–D7FFF
SA27
1
1
0
1
1
X
X
X
64/32
1B0000–1BFFFF
D8000–DFFFF
SA28
1
1
1
0
0
X
X
X
64/32
1C0000–1CFFFF
E0000–E7FFF
SA29
1
1
1
0
1
X
X
X
64/32
1D0000–1DFFFF
E8000–EFFFF
SA30
1
1
1
1
0
X
X
X
64/32
1E0000–1EFFFF
F0000–F7FFF
Sector
A19
A18
A17
A16
A15
A14
A13
A12
SA0
0
0
0
0
0
X
X
X
SA1
0
0
0
0
1
X
X
SA2
0
0
0
1
0
X
X
SA3
0
0
0
1
1
X
SA4
0
0
1
0
0
SA5
0
0
1
0
SA6
0
0
1
SA7
0
0
1
SA8
0
1
SA9
0
SA10
SA11
SA31
1
1
1
1
1
0
0
0
8/4
1F0000–1F1FFF
F8000–F8FFF
SA32
1
1
1
1
1
0
0
1
8/4
1F2000–1F3FFF
F9000–F9FFF
SA33
1
1
1
1
1
0
1
0
8/4
1F4000–1F5FFF
FA000–FAFFF
SA34
1
1
1
1
1
0
1
1
8/4
1F6000–1F7FFF
FB000–FBFFF
SA35
1
1
1
1
1
1
0
0
8/4
1F8000–1F9FFF
FC000–FCFFF
SA36
1
1
1
1
1
1
0
1
8/4
1FA000–1FBFFF
FD000–FDFFF
SA37
1
1
1
1
1
1
1
0
8/4
1FC000–1FDFFF
FE000–FEFFF
SA38
1
1
1
1
1
1
1
1
8/4
1FE000–1FFFFF
FF000–FFFFF
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Table 3. Bottom Boot Sector Address Tables (EN29SL160B)
Sector Size
(Kbytes/
Kwords)
Address Range (in hexadecimal)
8/4
Byte mode (x8)
000000–001FFF
Word
Mode(x16)
00000–00FFF
8/4
002000–003FFF
01000–01FFF
0
8/4
004000–005FFF
02000–02FFF
1
1
8/4
006000–007FFF
03000–03FFF
0
0
8/4
008000–009FFF
04000–04FFF
1
0
1
8/4
00A000–00BFFF
05000–05FFF
1
1
0
8/4
00C000–00DFFF
06000–06FFF
1
8/4
00E000–00FFFF
07000–07FFF
X
64/32
010000–01FFFF
08000–0FFFF
X
64/32
020000–02FFFF
10000–17FFF
X
X
64/32
030000–03FFFF
18000–1FFFF
X
X
64/32
040000–04FFFF
20000–27FFF
X
X
X
64/32
050000–05FFFF
28000–2FFFF
X
X
X
64/32
060000–06FFFF
30000–37FFF
1
X
X
X
64/32
070000–07FFFF
38000–3FFFF
0
X
X
X
64/32
080000–08FFFF
40000–47FFF
0
1
X
X
X
64/32
090000–09FFFF
48000–4FFFF
0
1
0
X
X
X
64/32
0A0000–0AFFFF
50000–57FFF
0
1
1
X
X
X
64/32
0B0000–0BFFFF
1
1
0
0
X
X
X
64/32
0C0000–0CFFFF
58000–5FFFF
60000–67FFF
0
1
1
0
1
X
X
X
64/32
0D0000–0DFFFF
68000–6FFFF
SA21
0
1
1
1
0
X
X
X
64/32
0E0000–0EFFFF
70000–77FFF
SA22
0
1
1
1
1
X
X
X
64/32
0F0000–0FFFFF
78000–7FFFF
SA23
1
0
0
0
0
X
X
X
64/32
100000–10FFFF
80000–87FFF
SA24
1
0
0
0
1
X
X
X
64/32
110000–11FFFF
88000–8FFFF
SA25
1
0
0
1
0
X
X
X
64/32
120000–12FFFF
90000–97FFF
SA26
1
0
0
1
1
X
X
X
64/32
130000–13FFFF
98000–9FFFF
SA27
1
0
1
0
0
X
X
X
64/32
140000–14FFFF
A0000–A7FFF
SA28
1
0
1
0
1
X
X
X
64/32
150000–15FFFF
A8000–AFFFF
SA29
1
0
1
1
0
X
X
X
64/32
160000–16FFFF
B0000–B7FFF
SA30
1
0
1
1
1
X
X
X
64/32
170000–17FFFF
B8000–BFFFF
SA31
1
1
0
0
0
X
X
X
64/32
180000–18FFFF
C0000–C7FFF
SA32
1
1
0
0
1
X
X
X
64/32
190000–19FFFF
C8000–CFFFF
Sector
SA0
A19
0
A18
0
A17
0
A16
0
A15
0
A14
0
A13
0
A12
0
SA1
0
0
0
0
0
0
0
1
SA2
0
0
0
0
0
0
1
SA3
0
0
0
0
0
0
SA4
0
0
0
0
0
1
SA5
0
0
0
0
0
SA6
0
0
0
0
0
SA7
0
0
0
0
0
1
1
SA8
0
0
0
0
1
X
X
SA9
0
0
0
1
0
X
X
SA10
0
0
0
1
1
X
SA11
0
0
1
0
0
X
SA12
0
0
1
0
1
SA13
0
0
1
1
0
SA14
0
0
1
1
SA15
0
1
0
0
SA16
0
1
0
SA17
0
1
SA18
0
1
SA19
0
SA20
SA33
1
1
0
1
0
X
X
X
64/32
1A0000–1AFFFF
D0000–D7FFF
SA34
1
1
0
1
1
X
X
X
64/32
1B0000–1BFFFF
D8000–DFFFF
SA35
1
1
1
0
0
X
X
X
64/32
1C0000–1CFFFF
E0000–E7FFF
SA36
1
1
1
0
1
X
X
X
64/32
1D0000–1DFFFF
E8000–EFFFF
SA37
1
1
1
1
0
X
X
X
64/32
1E0000–1EFFFF
F0000–F7FFF
SA38
1
1
1
1
1
X
X
X
64/32
1F0000–1FFFFF
F8000–FFFFF
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
PRODUCT SELECTOR GUIDE
Product Number
Speed Option
EN29SL160
Full Voltage Range: Vcc=1.65 – 2.2 V
-90
Max Access Time, ns (tacc)
90
Max CE# Access, ns (tce)
90
Max OE# Access, ns (toe)
35
BLOCK DIAGRAM
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
7
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
TABLE 3. OPERATING MODES
16M FLASH USER MODE TABLE
Reset#
A0-A19
(Note 1)
DQ0DQ7
DQ8-DQ15
Byte# Byte#
= VIL
= VIH
Operation
CE#
OE#
Read
Write
L
L
H
H
L/H
AIN
DOUT
DOUT
High-Z
L
Vcc ±
0.2V
H
L
(Note 1)
AIN
DIN
DIN
High-Z
X
X
H
Vcc±
0.2V
High-Z
High-Z
High-Z
H
H
H
X
X
X
L
X
High-Z
High-Z
High-Z
X
X
X
L
X
X
High-Z
High-Z
High-Z
X
X
X
VID
(Note 1)
DIN
DIN
X
L
H
L
VID
X
DIN
X
X
L
H
L
VID
(Note 1)
AIN
Sector
Address, A6 =
L, A1 = H,
A0 = L
Sector
Address, A6 =
L, A1 = H,
A0 = L
DIN
X
X
CMOS Standby
Output Disable
Hardware Reset
Temporary Sector
Unprotect
WE#
WP#/
ACC
Sector Protect
(Note 2)
Sector Unprotect
(Note 2)
L=logic low= VIL, H=Logic High= VIH, VID = VHH =10.0 ± 1.0V, X=Don’t Care (either L or H, but not floating!),
DIN=Data In, DOUT=Data Out, AIN=Address In,
Notes:
1. If WP#/ACC = VIL , the two outermost boot sectors are protected. If WP#/ACC = VIH the outermost boot sector protection
depends on whether they were last protected or unprotected. If WP#/ACC = VHH, all sectors will be unprotected.
2. Please refer to “ Sector / Sector Group Protection and Unprotection “, Flowchart 7a and Flowchart 7b.
TABLE 4. DEVICE IDENTIFICTION (Autoselect Codes)
16M FLASH MANUFACTURER/DEVICE ID TABLE
Description
OE
#
W
E#
A19
to
A12
A11
to
A10
A9
A8
X
X
VID
X
X
X
SA
Mode
Manufacturer ID:
Eon
Device ID
Word
L
L
H
L
L
H
(top boot
block)
Byte
L
L
H
Device ID
Word
L
L
H
Byte
L
L
H
L
L
H
(bottom boot
block)
Sector Protection
Verification
2
CE
#
A7
A6
A5
to
A2
A1
A0
DQ8
to
DQ15
DQ7 to
DQ0
H
X
L
X
L
L
X
1Ch
VID
X
X
L
X
L
H
22h
E4h
X
E4h
X
VID
X
X
L
X
L
H
22h
E7h
X
E7h
X
VID
X
X
L
X
H
L
1
X
X
01h
(Protected)
00h
(Unprotected)
Note:
1. If a manufacturing ID is read with A8=L, the chip will output a configuration code 7Fh. A further Manufacturing ID must be
read with A8=H.
2. A9 = VID is for HV A9 Autoselect mode only. A9 must be ≤ Vcc (CMOS logic level) for Command Autoselect Mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
8
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
USER MODE DEFINITIONS
Word / Byte Configuration
The signal set on the BYTE# Pin controls whether the device data I/O pins DQ15-DQ0 operate in
the byte or word configuration. When the Byte# Pin is set at logic ‘1’, then the device is in word
configuration, DQ15-DQ0 are active and are controlled by CE# and OE#.
On the other hand, if the Byte# Pin is set at logic ‘0’, then the device is in byte configuration, and
only data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
Standby Mode
The EN29SL160 has a CMOS-compatible standby mode, which reduces the current to < 0.2µA
(typical). It is placed in CMOS-compatible standby when the CE# pin is at VCC ± 0.2. RESET# and
BYTE# pin must also be at CMOS input levels. If CE# and RESET# are held at VIH, but not within
VCC ± 0.2V, the device will be in the standby modes, but the standby current will be greater. The
outputs are in a high-impedance state independent of the OE# input.
Read Mode
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. The device is also ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase Suspend mode.
The system can read array data using the standard read timings, except that if it reads at an address
within erase-suspended sectors, the device outputs status data. After completing a programming
operation in the Erase Suspend mode, the system may once again read array data with the same
exception. See “Erase Suspend/Erase Resume Commands” for more additional information.
The system must issue the reset command to re-enable the device for reading array data if DQ5
goes high, or while in the autoselect mode. See the “Reset Command” additional details.
Output Disable Mode
When the OE# pin is at a logic high level (VIH), the output from the EN29SL260 is disabled. The
output pins are placed in a high impedance state.
Auto Select Identification Mode
The autoselect mode provides manufacturer and device identification, and sector protection
verification, through identifier codes output on DQ15–DQ0. This mode is primarily intended for
programming equipment to automatically match a device to be programmed with its corresponding
programming algorithm. However, the autoselect codes can also be accessed in-system through the
command register.
When using programming equipment, the autoselect mode requires VID ( 9.0 V to 11.0 V) on
address pin A9. Address pins A8, A6, A1, and A0 must be as shown in Autoselect Codes table. In
addition, when verifying sector protection, the sector address must appear on the appropriate
highest order address bits. Refer to the corresponding Sector Address Tables. The Command
Definitions table shows the remaining address bits that are don’t-care. When all necessary bits have
been set as required, the programming equipment may then read the corresponding identifier code
on DQ15–DQ0.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
To access the autoselect codes in-system; the host system can issue the autoselect command via
the command register, as shown in the Command Definitions table. This method does not require
VID. See “Command Definitions” for details on using the autoselect mode.
Write Mode
Write operations, including programming data and erasing sectors of memory, require the host
system to write a command or command sequence to the device. Write cycles are initiated by
placing the byte or word address on the device’s address inputs while the data to be written is input
on DQ[7:0] in Byte Mode (BYTE# = L) or on DQ[15:0] in Word Mode (BYTE# = H). The host system
must drive the CE# and WE# pins Low and the OE# pin High for a valid write operation to take place.
All addresses are latched on the falling edge of WE# and CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE#, whichever happens first. The system is not required to
provide further controls or timings. The device automatically provides internally generated program /
erase pulses and verifies the programmed /erased cells’ margin. The host system can detect
completion of a program or erase operation by observing the RY/BY# pin, or by reading the DQ[7]
(Data# Polling) and DQ[6] (Toggle) status bits.
The ‘Command Definitions’ section of this document provides details on the specific device
commands implemented in the EN29SL160.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When
the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any
operation in progress, tristates all output pins, and ignores all read/write commands for the duration
of the RESET# pulse. The device also resets the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once the device is ready to accept another
command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held at Vss±0.3 V, the
device draws CMOS standby current (Icc2). If RESET# is held at VIL but not within Vss±0.3 V, the
standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the
Flash memory, enabling the system to read the boot-up firm- ware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin will immediately go to a
“1” but the actual internal operations may be active until tREADY (During Embedded Algorithms: 20uS)
amount of time has passed. The system thus must wait at least tREADY amount of time after the
RESET# is asserted. If RESET# is asserted when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (Not during Embedded
Algorithms: 500nS). The system can read data tRH after the RESET# pin returns to VIH.
Refer to the DC Characteristics tables Icc3 for RESET# parameters and to the figures at page 26 on
datasheet for the timing diagram.
Sector /Sector Group Protection and Unprotection
The hardware sector protection feature disables both program and erase operations in any sector.
The hardware sector unprotection feature re-enables both program and erase operations in
previously protected sectors.
There are two methods to enabling this hardware protection circuitry. The first one requires only
that the RESET# pin be at VID and then standard microprocessor timings can be used to enable or
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
10
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
disable this feature. See Flowchart 7a and 7b for the algorithm and Figure 12 for the timings.
When doing Sector Unprotect, all the other sectors should be protected first.
The second method is meant for programming equipment. This method requires VID be applied to
both OE# and A9 pin and non-standard microprocessor timings are used. This method is described
in a separate document called EN29SL160 Supplement, which can be obtained by contacting a
representative of Eon Silicon Solution, Inc.
Top Boot Sector/Sector Group Organization Table (EN29SL160T) for (Un)Protection
Sector / Sector Group
A19-A12
Sector/Sector Group Size
SA 0
00000XXX
00001XXX
00010XXX
00011XXX
001XXXXX
010XXXXX
011XXXXX
100XXXXX
101XXXXX
110XXXXX
11100XXX
11101XXX
11110XXX
11111000
11111001
11111010
11111011
11111100
11111101
11111110
11111111
64 Kbytes
SA 1-SA 3
SA 4-SA 7
SA 8-SA11
SA12-SA15
SA16-SA19
SA20-SA23
SA24-SA27
SA28-SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
190 (3x64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
190 (3x64) Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
Bottom Boot Sector/Sector Group Organization Table (EN29SL160B) for (Un)Protection
Sector / Sector Group
A19-A12
Sector/Sector Group Size
SA38
11111XXX
11110XXX
11101XXX
11100XXX
110XXXXX
101XXXXX
100XXXXX
011XXXXX
010XXXXX
001XXXXX
00011XXX
00010XXX
00001XXX
00000111
00000110
00000101
00000100
00000011
00000010
00000001
00000000
64 Kbytes
SA37-SA35
SA34-SA31
SA30-SA27
SA26-SA23
SA22-SA19
SA18-SA15
SA14-SA11
SA10-SA08
SA
SA
SA
SA
SA
SA
SA
SA
7
6
5
4
3
2
1
0
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
190 (3x64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
256 (4 x 64) Kbytes
190 (3x64) Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Write Protect / Accelerated Program (WP# / ACC)
The WP#/ACC pin provides two functions. The Write Protect (WP#) function provides a hardware
method of protecting the outermost two 8K-byte Boot Sector. The ACC function allows faster
manufacturing throughput at the factory, using an external high voltage.
When WP#/ACC is Low, the device protects the outermost two 8K-byte Boot Sector; no matter the
sectors are protected or unprotected using the method described in “Sector/Sector Group Protection
& Chip Unprotection”, Program and Erase operations in these sectors are ignored.
When WP#/ACC is High, the device reverts to the previous protection status of the outermost two
8K-byte boot sector. Program and Erase operations can now modify the data in the two outermost
8K-byte Boot Sector unless the sector is protected using Sector Protection.
When WP#/ACC is raised to VHH the memory automatically enters the Unlock Bypass mode(please
refer to “Command Definitions”), temporarily unprotects every protected sectors, and reduces the
time required for program operation. The system would use a two-cycle program command
sequence as required by the Unlock Bypass mode. When WP#/ACC returns to VIH or VIL, normal
operation resumes. The transitions from VIH or VIL to VHH and from VHH to VIH or VIL must be slower
than tBVHH,B see Figure 11.
Note that the WP#/ACC pin must not be left floating or unconnected. In addition, WP#/ACC pin must
not be at VHH for operations other than accelerated programming. It could cause the device to be
damaged.
Never raise this pin to VHH from any mode except Read mode, otherwise the memory may be left in
an indeterminate state.
A 0.1µF capacitor should be connected between the WP#/ACC pin and the VSS Ground pin to
decouple the current surges from the power supply. The PCB track widths must be sufficient to carry
the currents required during Unlock Bypass Program.
Temporary Sector Unprotect
Start
This feature allows temporary unprotection of previously protected
sector groups to change data while in-system. The Sector
Unprotect mode is activated by setting the RESET# pin to VID.
During this mode, formerly protected sectors can be programmed
or erased by simply selecting the sector addresses. Once is
removed from the RESET# pin, all the previously protected sectors
are protected again. See accompanying figure and timing
diagrams for more details.
Notes:
1. All protected sectors unprotected.
2. Previously protected sectors protected
again.
Reset#=VID (note 1)
Perform Erase or Program
Operations
Reset#=VIH
Temporary Sector
Unprotect Completed (note 2)
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically
enables this mode when addresses remain stable for tacc + 30ns. The automatic sleep mode is
independent of the CE#, WE# and OE# control signals. Standard address access timings provide
new data when addresses are changed. While in sleep mode, output is latched and always available
to the system. Icc5 in the DC Characteristics table represents the automatic sleep mode current
specification.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
12
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the
following hardware data protection measures prevent accidental erasure or programming, which
might otherwise be caused by false system level signals during Vcc power up and power down
transitions, or from system noise.
Low VCC Write Inhibit
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during
Vcc power up and power down. The command register and all internal program/erase circuits are
disabled, and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The
system must provide the proper signals to the control pins to prevent unintentional writes when Vcc
is greater than VLKO.
Write Pulse “Glitch” protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH, or WE# = VIH. To initiate a
write cycle, CE# and WE# must be a logical zero while OE# is a logical one. If CE#, WE#, and OE#
are all logical zero (not recommended usage), it will be considered a read.
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with CE# = VIL, WE# = VIL and OE# = VIH, the device will not accept commands on the rising edge of
WE#.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
13
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
COMMAND DEFINITIONS
The operations of EN29SL160 are selected by one or more commands written into the command
register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program, Sector Erase,
Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data sequences written
at specific addresses via the command register. The sequences for the specified operation are
defined in the Command Definitions table (Table 5). Incorrect addresses, incorrect data values or
improper sequences will reset the device to Read Mode.
Table 5. EN29SL160 Command Definitions
Cycles
Bus Cycles
Command
Sequence
Read
Reset
Autoselect
Manufacturer
ID
Device ID
Top Boot
Device ID
Bottom Boot
Sector Protect
Verify
1
1
Word
RA
xxx
4
Word
Byte
Word
Byte
nd
4
Word
AA
AA
3
2
2
6
6
1
1
555
55
2AA
555
2AA
555
2AA
AA
AAA
4
2AA
555
AAA
555
AAA
XXX
XXX
555
AAA
555
AAA
xxx
xxx
90
555
555
4
Byte
Cycle
Addr
Data
AA
555
AAA
555
AAA
th
3
Cycle
Addr Data
th
th
4
5
6
Cycle
Addr Data
Cycle
Addr Data
Cycle
Addr Data
2AA
555
2AA
555
55
555
AAA
10
55
SA
30
RD
F0
AAA
4
rd
2
555
Byte
Word
Byte
Word
Unlock Bypass
Byte
Unlock Bypass Program
Unlock Bypass Reset
Word
Chip Erase
Byte
Word
Sector Erase
Byte
Erase Suspend
Erase Resume
Program
st
1
Cycle
Addr Data
AAA
555
AAA
555
AAA
55
55
AA
A0
90
AA
AA
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
90
555
55
90
555
AA
90
AAA
555
AAA
555
AAA
55
55
A0
000
100
000
200
X01
X02
X01
X02
(SA)
X02
(SA)
X04
7F
1C
7F
1C
22E4
E4
22E7
E7
XX00
XX01
00
01
PA
PD
20
PD
00
555
AAA
555
AAA
55
55
80
80
555
AAA
555
AAA
AA
AA
B0
30
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A19-A12 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program
or Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read
array data using the standard read timings, with the only difference in that if it reads at an address
within erase suspended sectors, the device outputs status data. After completing a programming
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
14
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
operation in the Erase Suspend mode, the system may once again read array data with the same
exception.
The Reset command must be issued to re-enable the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See next section for details on Reset.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are
don’t-care for this command.
The reset command may be written between the sequence cycles in an erase command sequence
before erasing begins. This resets the device to reading array data. Once erasure begins, however,
the device ignores reset commands until the operation is complete. The reset command may be
written between the sequence cycles in a program command sequence before programming begins.
This resets the device to reading array data (also applies to programming in Erase Suspend mode).
Once programming begins, however, the device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an autoselect command
sequence. Once in the autoselect mode, the reset command must be written to return to reading
array data (also applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command returns the device
to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices
codes, and determine whether or not a sector is protected. The Command Definitions table shows
the address and data requirements. This is an alternative to the method that requires VID on
address bit A9 and is intended for PROM programmers.
Two unlock cycles followed by the autoselect command initiate the autoselect command sequence.
Autoselect mode is then entered and the system may read at addresses shown in Table 4 any
number of times, without needing another command sequence.
The system must write the reset command to exit the autoselect mode and return to reading array
data.
Word / Byte Programming Command
The device may be programmed by byte or by word, depending on the state of the Byte# Pin.
Programming the EN29SL160 is performed by using a four bus-cycle operation (two unlock write
cycles followed by the Program Setup command and Program Data Write cycle). When the program
command is executed, no additional CPU controls or timings are necessary. An internal timer
terminates the program operation automatically. Address is latched on the falling edge of CE# or
WE#, whichever is last; data is latched on the rising edge of CE# or WE#, whichever is first.
Programming status may be checked by sampling data on DQ7 (DATA# polling) or on DQ6 (toggle
bit). When the program operation is successfully completed, the device returns to read mode and
the user can read the data programmed to the device at that address. Note that data can not be
programmed from a 0 to a 1. Only an erase operation can change a data from 0 to 1. When
programming time limit is exceeded, DQ5 will produce a logical “1” and a Reset command can
return the device to Read mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
15
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Unlock Bypass
To speed up programming operation, the Unlock Bypass Command may be used. Once this feature
is activated, the shorter two-cycle Unlock Bypass Program command can be used instead of the
normal four-cycle Program Command to program the device. During the unlock bypass mode, only
the Unlock Bypass Program and Unlock Bypass Reset command can be accepted. This mode is
exited after issuing the Unlock Bypass Reset Command. The device powers up with this feature
disabled
The device provides accelerated program operations through the WP#/ACC pin. When WP#/ACC is
asserted to VHH, the device automatically enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass Program command sequence.
B
B
Chip Erase Command
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing
two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then
followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The
device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically preprograms and verifies the entire memory for an all zero data pattern prior to
electrical erase. The system is not required to provide any controls or timings during these
operations. The Command Definitions table shows the address and data requirements for the chip
erase command sequence.
Any commands written to the chip during the Embedded Chip Erase algorithm are ignored.
The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. See “Write
Operation Status” for information on these status bits. When the Embedded Erase algorithm is
complete, the device returns to reading array data and addresses are no longer latched.
Flowchart 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations
tables in “AC Characteristics” for parameters, and to the Chip/Sector Erase Operation Timings for
timing waveforms.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by
writing two un-lock cycles, followed by a set-up command. Two additional unlock write cycles are
then followed by the address of the sector to be erased, and the sector erase command. The
Command Definitions table shows the address and data requirements for the sector erase
command sequence.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other
commands are ignored.
When the Embedded Erase algorithm is complete, the device returns to reading array data and
addresses are no longer latched. The system can determine the status of the erase operation by
using DQ7, DQ6, or DQ2. Refer to “Write Operation Status” for information on these status bits.
Flowchart 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations
tables in the “AC Characteristics” section for parameters, and to the Sector Erase Operations Timing
diagram for timing waveforms.
Erase Suspend / Resume Command
The Erase Suspend command allows the system to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected for erasure. This command is valid only
during the sector erase operation. The Erase Suspend command is ignored if written during the chip
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
16
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
erase operation or Embedded Program algorithm. Addresses are don’t-cares when writing the
Erase Suspend command.
When the Erase Suspend command is written during a sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
After the erase operation has been suspended, the system can read array data from or program
data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Normal read and write timings and command definitions apply. Reading at any address
within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See
“Write Operation Status” for information on these status bits.
After an erase-suspended program operation is complete, the system can once again read array
data within non-suspended sectors. The system can determine the status of the program operation
using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation
Status” for more information. The Autoselect command is not supported during Erase Suspend
Mode.
The system must write the Erase Resume command (address bits are don’t-care) to exit the erase
suspend mode and continue the sector erase operation. Further writes of the Resume command are
ignored. Another Erase Suspend command can be written after the device has resumed erasing.
WRITE OPERATION STATUS
DQ7: DATA# Polling
The EN29SL160 provides DATA# polling on DQ7 to indicate the status of the embedded operations.
The DATA# Polling feature is active during the embedded Programming, Sector Erase, Chip Erase,
and Erase Suspend. (See Table 6)
When the embedded Programming is in progress, an attempt to read the device will produce the
complement of the data last written to DQ7. Upon the completion of the embedded Programming,
an attempt to read the device will produce the true data written to DQ7. For the embedded
Programming, DATA# polling is valid after the rising edge of the fourth WE# or CE# pulse in the
four-cycle sequence.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the
DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7
output during the read cycles. For Chip Erase, the DATA# polling is valid after the rising edge of the
sixth WE# or CE# pulse in the six-cycle sequence. DATA# polling is valid after the last rising edge of
the WE# or CE# pulse for chip erase or sector erase.
DATA# Polling must be performed at any address within a sector that is being programmed or
erased and not a protected sector. Otherwise, DATA# polling may give an inaccurate result if the
address used is in a protected sector.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when
the output enable (OE#) is low. This means that the device is driving status information on DQ7 at
one instant of time and valid data at the next instant of time. Depending on when the system
samples the DQ7 output, it may read the status of valid data. Even if the device has completed the
embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid.
The valid data on DQ0-DQ7 will be read on the subsequent read attempts.
The flowchart for DATA# Polling (DQ7) is shown on Flowchart 5. The DATA# Polling (DQ7) timing
diagram is shown in Figure 8.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
17
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EN29SL160
RY/BY#: Ready/Busy
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is
in progress or completed. The RY/BY# status is valid after the rising edge of the final WE# pulse in
the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied
together in parallel with a pull-up resistor to Vcc.
In the output-low period, signifying Busy, the device is actively erasing or programming. This
includes programming in the Erase Suspend mode. If the output is high, signifying the Ready, the
device is ready to read array data (including during the Erase Suspend mode), or is in the standby
mode.
DQ6: Toggle Bit I
The EN29SL160 provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the
embedded programming and erase operations. (See Table 6)
During an embedded Program or Erase operation, successive attempts to read data from the device
at any address (by active OE# or CE#) will result in DQ6 toggling between “zero” and “one”. Once
the embedded Program or Erase operation is completed, DQ6 will stop toggling and valid data will
be read on the next successive attempts. During embedded Programming, the Toggle Bit is valid
after the rising edge of the fourth WE# pulse in the four-cycle sequence. During Erase operation, the
Toggle Bit is valid after the rising edge of the sixth WE# pulse for sector erase or chip erase.
In embedded Programming, if the sector being written to is protected, DQ6 will toggles for about 2
μs, then stop toggling without the data in the sector having changed. In Sector Erase or Chip Erase,
if all selected sectors are protected, DQ6 will toggle for about 100 μs. The chip will then return to the
read mode without changing data in all protected sectors.
The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is
shown in Figure 9.
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count
limit. Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the
program or erase cycle was not successfully completed. Since it is possible that DQ5 can become a
1 when the device has successfully completed its operation and has returned to read mode, the user
must check again to see if the DQ6 is toggling after detecting a “1” on DQ5.
The DQ5 failure condition may appear if the system tries to program a “1” to a location that is
previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under
this condition, the device halts the operation, and when the operation has exceeded the timing limits,
DQ5 produces a “1.” Under both these conditions, the system must issue the reset command to
return the device to reading array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the output on DQ3 can be used to determine
whether or not an erase operation has begun. (The sector erase timer does not apply to the chip
erase command.) When sector erase starts, DQ3 switches from “0” to “1.” This device does not
support multiple sector erase command sequences so it is not very meaningful since it immediately
shows as a “1” after the first 30h command. Future devices may support this feature.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
18
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Rev. G, Issue Date: 2008/09/09
EN29SL160
DQ2: Erase Toggle Bit II
The “Toggle Bit” on DQ2, when used with DQ6, indicates whether a particular sector is actively
erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erasesuspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command
sequence. DQ2 toggles when the system reads at addresses within those sectors that have been
selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2
cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by
comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to the following table to compare outputs for DQ2 and DQ6.
Flowchart 6 shows the toggle bit algorithm, and the section “DQ2: Toggle Bit” explains the algorithm.
See also the “DQ6: Toggle Bit I” subsection. Refer to the Toggle Bit Timings figure for the toggle bit
timing diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical
form.
Reading Toggle Bits DQ6/DQ2
Refer to Flowchart 6 for the following discussion. Whenever the system initially begins reading
toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is
toggling. Typically, a system would note and store the value of the toggle bit after the first read. After
the second read, the system would compare the new value of the toggle bit with the first. If the
toggle bit is not toggling, the device has completed the program or erase operation. The system can
read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling,
the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the
system should then determine again whether the toggle bit is toggling, since the toggle bit may have
stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has
successfully completed the program or erase operation. If it is still toggling, the device did not
complete the operation successfully, and the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5
has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive
read cycles, determining the status as described in the previous paragraph. Alternatively, it may
choose to perform other system tasks. In this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the operation (top of Flowchart 6).
Write Operation Status
Standar
d Mode
Erase
Suspend
Mode
Operation
DQ7
(note2)
DQ6
DQ5
(note1)
DQ3
DQ2
(note2)
RY/BY#
Embedded Program
Algorithm
DQ7#
Toggle
0
N/A
No
toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
1
No
Toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Reading within Erase
Suspended Sector
Reading within Non-Erase
Suspended Sector
Erase-Suspend Program
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5:Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
19
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Table 6. Status Register Bits
DQ
Name
Logic Level
‘1’
‘0’
7
6
DATA#
POLLING
TOGGLE
BIT
DQ7
Definition
Erase Complete or
erase Sector in Erase suspend
Erase On-Going
Program Complete or
data of non-erase Sector
during Erase Suspend
DQ7#
‘-1-0-1-0-1-0-1-’
DQ6
Program On-Going
Erase or Program On-going
Read during Erase Suspend
Erase Complete
‘-1-1-1-1-1-1-1-‘
5
ERROR BIT
3
ERASE
TIME BIT
2
TOGGLE
BIT
‘1’
‘0’
‘1’
‘0’
Program or Erase Error
Program or Erase On-going
Erase operation start
Erase timeout period on-going
Chip Erase, Sector Erase or
Erase suspend on currently
addressed
Sector. (When DQ5=1, Erase
Error due to currently
addressed Sector. Program
during Erase Suspend ongoing at current address
‘-1-0-1-0-1-0-1-’
Erase Suspend read on
non Erase Suspend Sector
DQ2
Notes:
DQ7 DATA# Polling: indicates the P/E C status check during Program or Erase, and on completion before checking bits DQ5
for Program or Erase Success.
DQ6 Toggle Bit: remains at constant level when P/E operations are complete or erase suspend is acknowledged.
Successive reads output complementary data on DQ6 while programming or Erase operation are on-going.
DQ5 Error Bit: set to “1” if failure in programming or erase
DQ3 Sector Erase Command Timeout Bit: Operation has started. Only possible command is Erase suspend (ES).
DQ2 Toggle Bit: indicates the Erase status and allows identification of the erased Sector.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
20
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
EMBEDDED ALGORITHMS
Flowchart 1. Embedded Program
START
Write Program
Command Sequence
(shown below)
Data# Poll Device
Verify Data?
Increment
Address
Last
No
Address?
Yes
Programming Done
Flowchart 2. Embedded Program Command Sequence
See the Command Definitions section for more information on WORD mode.
555H / AAH
2AAH / 55H
555H / A0H
PROGRAM ADDRESS / PROGRAM DATA
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
21
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Flowchart 3. Embedded Erase
START
Write Erase
Command Sequence
Data Poll from
System or Toggle Bit
successfully
completed
Data =FFh?
No
Yes
Erase Done
Flowchart 4. Embedded Erase Command Sequence
See the Command Definitions section for more information on WORD mode.
Chip Erase
Sector Erase
555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/80H
555H/80H
555H/AAH
555H/AAH
2AAH/55H
2AAH/55H
555H/10H
Sector Address/30H
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
22
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Flowchart 5. DATA# Polling
Algorithm
Start
Read Data
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read Data (1)
Notes:
(1)This second read is necessary in case the
first read was done at the exact instant when
the status data was in transition.
Yes
DQ7 = Data?
No
Fail
Pass
Start
Flowchart 6. Toggle Bit Algorithm
Read Data twice
No
DQ6 = Toggle?
Yes
No
DQ5 = 1?
Yes
Read Data twice (2)
Notes:
(2) This second set of reads is necessary in case
the first set of reads was done at the exact
instant when the status data was in transition.
No
DQ6 = Toggle?
Yes
Fail
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
23
Pass
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Flowchart 7a. In-System Sector Protect Flowchart
START
PLSCNT = 1
RESET# = VID
Wait 1 μs
No
First Write
Cycle =
60h?
Temporary Sector
Unprotect Mode
Yes
Set up sector
address
Sector Protect: Write 60h
to sector addr with
A6 = 0, A1 = 1, A0 = 0
Wait 150 μs
Verify Sector Protect:
Write 40h to sector
address with
A6 = 0, A1 = 1, A0 = 0
Increment
PLSCNT
Reset
PLSCNT = 1
Wait 0.4 μs
Read from sector
address with
A6 = 0, A1 = 1,
A0=0
No
PLSCNT = 25?
No
Data = 01h?
Yes
Yes
Device failed
Protect another
sector?
Yes
No
Remove VID
from RESET#
Write reset
command
Sector Protect
Algorithm
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Sector Protect
complete
24
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Flowchart 7b. In-System Sector Unprotect Flowchart
START
PLSCNT = 1
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector unprotect
address (see
Diagram 7a.)
RESET# = VID
Wait 1 μS
No
Temporary Sector
Unprotect Mode
First Write
Cycle = 60h?
Yes
No
All sectors
protected?
Yes
Set up first sector
address
Sector Unprotect: Write 60H to
sector address with A6 = 1,
A1 = 1, A0 = 0
Wait 15 ms
Increment
PLSCNT
Verify Sector Unprotect:
Write 40h to sector address
with A6 = 1, A1 = 1, A0 =0
Wait 0.4 μS
No
PLSCNT =
1000?
Sector
Unprotect
Algorithm
Read from sector address with
A6 = 1, A1 = 1, A0 = 0
No
Yes
Yes
Device failed
Set up next sector
address
Data = 00h?
No
Last sector
verified?
Yes
Remove VID from
RESET#
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
25
Write reset
command
Sector Unprotect
complete
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Table 7. DC Characteristics
(Ta = 0°C to 70°C or – 40°C to 85°C; VCC = 1.65-2.2V)
Symbol
Parameter
Test Conditions
ILI
Input Leakage Current
ILO
Output Leakage Current
Active Read Current (Byte mode )
ICC1
Active Read Current (Word mode )
Min
Max
Unit
0V≤ VIN ≤ Vcc
±3
µA
0V≤ VOUT ≤ Vcc
±3
µA
12
22
mA
12
22
mA
0.2
5.0
µA
0.2
5.0
µA
15
30
mA
0.2
5.0
µA
CE# = VIL, OE# = VIH,
F=5MHz
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
CE# = BYTE# =
RESET# = Vcc ± 0.3V
(Note 1)
Byte program, Sector or
Chip Erase in progress
ICC2
Standby Current ( CMOS )
ICC3
VCC , Reset Current
ICC4
Supply Current (Program or Erase)
ICC5
Automatic Sleep Mode
VIL
Input Low Voltage
-0.5
VIH
Input High Voltage
0.7 x
Vcc
VOL
Output Low Voltage
VIH = Vcc ± 0.3 V
VIL = Vss ± 0.3 V
Typ
0.3 x
VCC
Vcc +
0.3
0.25
IOL = 2.0 mA
Output High Voltage TTL
IOH = -2.0 mA
Output High Voltage CMOS
IOH = -100 μA,
VOH
VID
A9 Voltage (Electronic Signature)
IID
A9 Current (Electronic Signature)
VLKO
Supply voltage (Erase and
Program lock-out)
0.85 x
Vcc
Vcc –
0.4V
9.0
A9 = VID
1.2
10.0
11.0
V
50
µA
1.5
V
they draw power if not at full CMOS supply voltages.
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
V
V
1. BYTE# pin can also be GND ± 0.3V. BYTE# and RESET# pin input buffers are always enabled so that
26
V
V
Notes
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
V
EN29SL160
Test Conditions
Test Specifications
Test Conditions
-90
Unit
Output Load Capacitance, CL
100
pF
Input Rise and Fall times
5
ns
Input Pulse Levels
Input timing measurement
reference levels
Output timing measurement
reference levels
0.0-2.0
V
1.0
V
1.0
V
Output Load
1 TTL gate
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
27
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
AC CHARACTERISTICS
Hardware Reset (Reset#)
(Ta = 0°C to 70°C or – 40°C to 85°C; VCC = 1.65-2.2V)
Parameter
Std
tREADY
tREADY
tRP
tRH
Description
Reset# Pin Low to Read or Write
Embedded Algorithms
Reset# Pin Low to Read or Write
Non Embedded Algorithms
Reset# Pulse Width
Reset# High Time Before Read
Test
Setup
Speed options
-90
Unit
Max
20
μs
Max
500
ns
Min
Min
500
50
ns
ns
Reset# Timings
RY/BY#
0V
CE#
OE#
tRH
RESET#
tRP
tREADY
Figure 1. Reset Timing NOT During Embbedded
RY/BY#
tREADY
CE#
OE#
RESET#
tRP
tRH
Figure 2. Reset Timings During Embedded
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
28
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
AC CHARACTERISTICS
Word / Byte Configuration (Byte#)
(Ta = 0°C to 70°C or – 40°C to 85°C; VCC = 1.65-2.2V)
Std
Parameter
tBCS
tCBH
tRBH
Speed
Description
Byte# to CE# switching setup time
CE# to Byte# switching hold time
RY/BY# to Byte# switching hold time
Unit
-90
0
0
0
Min
Min
Min
ns
ns
ns
CE#
OE#
Byte#
tCBH
tBCS
Figure 3. Byte# timings for Read Operations
CE#
WE#
Byte#
tRBH
tBCS
RY/BY#
Figure 4. Byte# timings for Write Operations
Note: Switching BYTE# pin not allowed during embedded operations
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
29
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Table 8. AC CHARACTERISTICS
(Ta = 0°C to 70°C or – 40°C to 85°C; VCC = 1.65-2.2 V)
Read-only Operations Characteristics
Parameter
Symbols
JEDEC
Standard
Description
tAVAV
tRC
Read Cycle Time
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable To Output Delay
tGLQV
tOE
tEHQZ
Speed Options
Test
Setup
-90
Unit
Min
90
ns
CE# = VIL
OE# = VIL
Max
90
ns
OE# = VIL
Max
90
ns
Output Enable to Output Delay
Max
35
ns
tDF
Chip Enable to Output High Z
Max
20
ns
tGHQZ
tDF
Output Enable to Output High Z
Max
20
ns
tAXQX
tOH
Output Hold Time from
Addresses, CE# or OE#,
whichever occurs first
Min
0
ns
Notes :
For – 90
Vcc =1.65 – 2.2V
Output Load: 1 TTL gate and 100 pF
Input Rise and Fall Times: 5 ns
Input Pulse Levels: 0.0 V to Vcc
Timing Measurement Reference Level, Input and Output: 1.0 V
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
Output Valid
Outputs
HIGH Z
Reset#
RY/BY#
0V
Figure 5. AC Waveforms for READ Operations
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
30
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Table 9. AC CHARACTERISTICS
(Ta = 0°C to 70°C or – 40°C to 85°C; VCC = 1.65-2.2V)
Write (Erase/Program) Operations
Parameter
Symbols
Speed Options
Description
JEDEC
Standard
-90
Unit
tAVAV
tWC
Write Cycle Time
Min
90
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tDVWH
tDS
Data Setup Time
Min
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time before
Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# SetupTime
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
45
ns
tWHDL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte
Typ
5
µs
Word
Typ
7
µs
tWHWH2
tWHWH2
Typ
0.5
s
Programming
Operation
Sector Erase Operation
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
31
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Table 10. AC CHARACTERISTICS
(Ta = 0°C to 70°C or – 40°C to 85°C; VCC = 1.65-2.2V)
Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
Speed Options
-90
Unit
Min
90
ns
Address Setup Time
Min
0
ns
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time before
Write (OE# High to CE# Low)
Min
0
ns
tWLEL
tWS
WE# SetupTime
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
45
ns
tEHEL
tCPH
CE# Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte
Typ
5
µs
Word
Typ
7
µs
tWHWH2
tWHWH2
Typ
0.5
s
JEDEC
Standard
Description
tAVAV
tWC
Write Cycle Time
tAVEL
tAS
tELAX
Programming
Operation
Sector Erase Operation
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
32
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Typ
Limits
Max
Unit
Sector Erase Time
0.5
10
sec
Chip Erase Time
17.5
Byte Programming Time
5
300
µs
Word Programming Time
7
300
µs
Byte
10.6
32
Word
7.4
11
Parameter
Chip Programming
Time
Erase/Program Endurance
Comments
Excludes 00H programming prior
to erasure
sec
Excludes system level overhead
sec
100K
Minimum 100K cycles
cycles
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins
(including A9, Reset# and OE#)
-1.0 V
12.0 V
Input voltage with respect to Vss on all I/O Pins
-1.0 V
Vcc + 1.0 V
Vcc Current
-100 mA
100 mA
Note : These are latch up characteristics and the device should never be put under these conditions.
Refer to Absolute Maximum ratings for the actual operating limits.
Table 14. 48-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
( VCC = 1.65-2.2V)
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Table 15. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
33
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
AC CHARACTERISTICS
Figure 6. AC Waveforms for Chip/Sector Erase Operations Timings
Erase Command Sequence (last 2 cycles)
tWC
Addresses
tAS
0x2AA
Read Status Data (last two cycles)
tAH
SA
VA
VA
0x555 for chip
erase
CE#
tGHWL
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
Data
0x55
tDS
0x30
tDH
Status
tBUSY
DOUT
tRB
RY/BY#
VCC
tVCS
Notes:
1. SA=Sector Address (for sector erase), VA=Valid Address for reading status, Dout=true data at read address.
2. Vcc shown only to illustrate tvcs measurement references. It cannot occur as shown during a valid command
sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
34
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Figure 7. Program Operation Timings
Program Command Sequence (last 2 cycles)
tWC
Addresses
tAS
0x555
Program Command Sequence (last 2 cycles)
tAH
PA
PA
PA
CE#
tGHWL
OE#
tCH
tWP
WE#
tWPH
tWHWH1
tCS
Data
PD
OxA0
Status
DOUT
tDS
tRB
tBUSY
tDH
RY/BY#
tVCS
VCC
Notes:
1. PA=Program Address, PD=Program Data, DOUT is the true data at the program address.
2. VCC shown in order to illustrate tVCS measurement references. It cannot occur as shown during a valid
command sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
35
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm
Operations
tRC
Addresses
VA
VA
VA
tACC
tCH
tCE
CE#
tOE
OE#
tOEH
tDF
WE#
tOH
DQ[7]
Complement
DQ[6:0]
Complement
Status
Data
Status Data
True
Valid Data
True
Valid Data
tBUSY
RY/BY#
Notes:
1. VA=Valid Address for reading Data# Polling status data
2. This diagram shows the first status cycle after the command sequence, the last status read cycle and the array data read cycle.
Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm
Operations
tRC
Addresses
VA
VA
VA
VA
tACC
tCH
tCE
CE#
tOE
OE#
tOEH
WE#
tDF
tOH
Valid Status
DQ6, DQ2
tBUSY
(first read)
Valid Status
(second
d)
Valid Status
Valid Data
(stops toggling)
RY/BY#
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
36
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Figure 10. Alternate CE# Controlled Write Operation Timings
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
Addresses
VA
tWC
tAS
tAH
WE#
tWH
tGHEL
OE#
tCP
tWS
tCPH
tCWHWH1 / tCWHWH2
CE#
tDS
tBUSY
tDH
Status
Data
DOUT
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
0xA0 for
Program
RY/BY#
tRH
Reset#
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
Dout = array data read at VA
Shown above are the last two cycles of the program or erase command sequence and the last status read cycle
Reset# shown to illustrate tRH measurement references. It cannot occur as shown during a valid command
sequence.
Figure 11. DQ2 vs. DQ6
Enter
Embedded
Erase
WE#
Enter Erase
Suspend
Program
Erase
Suspend
Erase
Erase
Resume
Enter
Suspend
Program
Enter
Suspend
Read
Erase
Suspend
Read
Erase
DQ6
DQ2
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
37
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
Erase
Complete
EN29SL160
Figure 12. Sector Protect/Unprotect Timing Diagram
VID
Vcc
RESET#
0V
0V
tVIDR
tVIDR
SA,
A6,A1,A0
Data
60h
Valid
Valid
Valid
60h
40h
Status
Sector Protect/Unprotect
Verify
CE#
>0.4μS
WE#
>1μS
Sector Protect: 150 uS
Sector Unprotect: 15 mS
OE#
Notes:
Use standard microprocessor timings for this device for read and write cycles.
For Sector Protect, use A6=0, A1=1, A0=0. For Sector Unprotect, use A6=1, A1=1, A0=0.
Temporary Sector Unprotect
Parameter
Std
tVIDR
tRSP
Speed Option
-90
Description
VID Rise and Fall Time
RESET# Setup Time for Temporary
Sector Unprotect
Unit
Min
500
ns
Min
4
µs
Figure 13. Temporary Sector Unprotect Timing Diagram
VID
RESET#
0 or 2 V
0 or 2 V
tVIDR
tVIDR
CE#
WE#
tRSP
RY/BY#
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
38
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Write Protect / Accelerated Program
Figure 14. Accelerated Program Timing Diagram
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
39
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
FIGURE 15. 48L TSOP 12mm x 20mm package outline
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
40
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
FIGURE 16. 48L TFBGA 6mm x 8mm package outline
SYMBOL
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
41
DIMENSION IN MM
MIN.
NOR
MAX
A
---
---
1.30
A1
0.23
0.29
---
A2
0.84
0.91
---
D
7.90
8.00
8.10
E
5.90
6.00
6.10
D1
---
5.60
---
E1
---
4.00
---
e
---
0.80
---
b
0.35
0.40
Note : 1. Coplanarity: 0.1 mm
0.45
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
FIGURE 17. 48L WFBGA 5mm x 6mm package outline
SYMBOL
DIMENSION IN MM
MIN.
NOR
MAX
A
---
---
0.73
A1
0.16
0.21
0.26
A2
---
0.436
---
D
4.90
5.00
5.10
E
5.90
6.00
6.10
D1
---
2.50
---
E1
---
5.00
---
e
---
0.50
---
øb
0.27
0.32
0.37
Note : 1. Coplanarity: 0.1 mm
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
42
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
FIGURE 18. 48L WLGA 5mm x 6mm package outline
SYMBOL
DIMENSION IN MM
MIN.
NOR
MAX
A
---
---
0.535
A1
0.02
0.05
0.08
D
4.90
5.00
5.10
E
5.90
6.00
6.10
D1
---
2.50
---
E1
---
5.00
---
e
---
0.50
---
øb
0.20
0.25
0.30
Note : 1. Coplanarity: 0.06 mm
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
43
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Storage Temperature
-65 to +125
°C
Plastic Packages
-65 to +125
°C
-55 to +125
°C
200
mA
A9, OE#, Reset#
and WP#/ACC2
-0.5 to +11.5
V
All other pins 3
-0.5 to Vcc+0.5
V
Vcc
-0.5 to +4.0
V
Ambient Temperature
With Power Applied
Output Short Circuit Current1
Voltage with
Respect to Ground
Notes:
1.
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
2.
Minimum DC input voltage on A9, OE#, RESET# and WP#/ACC pins is –0.5V. During voltage transitions, A9, OE#,
RESET# and WP#/ACC pins may undershoot Vss to –1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns.
See figure below. Maximum DC input voltage on A9, OE#, and RESET# is 11.5V which may overshoot to 12.5V for periods
up to 20ns.
3.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot Vss to –1.0V for
periods of up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O
pins is Vcc + 0.5 V. During voltage transitions, outputs may overshoot to Vcc + 1.5 V for periods up to 20ns. See figure
below.
4.
Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress
rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the
device to the maximum rating values for extended periods of time may adversely affect the device reliability.
RECOMMENDED OPERATING RANGES1
Parameter
Ambient Operating Temperature
Commercial Devices
Industrial Devices
Value
Unit
0 to 70
-40 to 85
°C
Regulated:2.0 to 2.2
Operating Supply Voltage
Vcc
V
Full: 1.65 to 2.2
1. Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Vcc
+2.0V
0
0
Maximum Negative Overshoot Waveform
Maximum Positive Overshoot Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
44
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
ORDERING INFORMATION
EN29SL160
T
-
90
T
C
P
PACKAGING CONTENT
(Blank) = Conventional
P = Pb Free
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE
T = 48-pin TSOP
B = 48-Ball Thin Fine Pitch Ball Grid Array (TFBGA)
0.80mm pitch, 6mm x 8mm package
M = 48-Ball Very-Very-Thin-Profile Fine Pitch
Ball Grid Array (WFBGA)
0.50mm pitch, 5mm x 6mm package
K = 48-Ball Very-Very-Thin-Profile Fine Pitch
Land Grid Array (WLGA)
SPEED
90 = 90ns
BOOT CODE SECTOR ARCHITECTURE
T = Top Sector
B = Bottom Sector
BASE PART NUMBER
EN = Eon Silicon Solution Inc.
29SL = FLASH, 1.8V Read Program Erase
160 = 16 Megabit (2M x 8 / 1M x 16)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
45
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09
EN29SL160
Revisions List
Revision No Description
Date
A
B
2005/12/15
2006/10/25
C
D
E
F
G
Initial Release
1. change boot sector to eight 8Kbyte sector at page 1,4,5
2. change ICC1 Read current from 7 / 15mA to 12 / 22mA for
typical and maximum condition
3. remove 70ns products at page 40
1. Add WFBGA and WLGA package
1. modify Sector Group Organization Table for (Un) Protection
in page 11
2. Add Write Protect / Accelerated Program (WP# / ACC)
function in page 12.
3. Correct the typo at Table 9,10 in page 31,32 for tWHWH1 from
Max. to Typ.
4. Correct the Byte Programming Time (typ.) from 8 to 5 and
Word Programming Time (typ.) from 8 to 7 at Table 11
ERASE AND PROGRAMMING PERFORMANCE in page
33.
Correct the density configuration in ordering information, in page
45
Change the FBGA 48 Ball package thickness from 1.31mm to
1.30mm in page 41
Modify WFBGA and WLGA package Ball H6 from NC to Reset#
in page 3
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
46
2007/9/21
2007/11/15
2008/03/04
2008/07/07
2008/09/09
©2004 Eon Silicon Solution, Inc., www.eonssi.com
Rev. G, Issue Date: 2008/09/09