LED - Chip ELС-410-37 Preliminary 10.04.2007 rev. 02/07 Radiation Type Technology Electrodes Violet Standard InGaN/Al2O3 Both on top side typ. dimensions in µm (±20 µm) 380 µm typ. thickness 90 (±20) µm Ø100 P 350 µm 380 µm Ø 90µm 100 µm N cathode gold alloy, 1.5 µm anode gold alloy, 1.5 µm 350 µm Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 3,6 4,5 V Forward voltage IF = 20 mA VF Reverse voltage IF = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 1,9 3,0 mW Radiant intensity1 IF = 20 mA Ιe 1,0 1,3 mW/sr Peak wavelength IF = 20 mA λp 400 410 Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 17 nm Switching time IF = 20 mA tr , t f 20 ns V 420 nm 1 Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-410-37 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1