LED - Chip ELС-420-21 10.04.2008 rev. 01 Radiation Type Technology Electrodes Violet Special InGaN N (cathode) up typ. dimensions (±50) µm typ. thickness 145 (±15) µm cathode gold alloy, 2.5 µm anode gold alloy, 1.5 µm Absolute Maximum Ratings at Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit IF 500 mA IFM 2 A Operating temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C Tj 125 °C Typ Max Unit VF 2.8 3.2 V 3.1 3.5 V DC forward current tp≤100 µs, D = 0.05 Peak forward current Junction temperature Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IF = 20 mA Forward voltage Symbol Min Forward voltage1 IF = 350 mA VF Reverse voltage IR = 10 µA VR 5 IF = 20 mA Φe 10 Radiant power IF = 350 mA Φe Peak wavelength IF = 350 mA λP Spectral bandwidth at 50% IF = 350 mA ∆λ0.5 20 nm Switching time IF = 350 mA tr , tf 30 ns 1 Radiant power 1,2 1) 2) 410 V 14 mW 240 mW 420 430 nm Measured on bare chip on TO-66 header only recommended on optimal heat sink Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] λP(typ) [nm] Quantity ELС-420-21 Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customer themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545