LED - Chip ELС-470-31-1 Preliminary 10.04.2007 rev. 02/07 Radiation Type Technology Electrodes Blue Standard InGaN/Al2O3 Both on top side typ. dimensions (±25) µm 1000 P typ. thickness 90 (±10) µm contact metalization gold alloy, 1.5 µm N backside metalization N aluminium alloy, 1.0 µm P Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage IF = 20 mA VF 2.7 3.0 V Forward voltage1) IF = 350 mA VF 3.24 3.7 V Reverse voltage IR = 10 µA VR 5 Radiant power IF = 20 mA Φe 8.8 Radiant power1,2) IF = 350 mA Φe Luminous intensity1) IF = 350 mA ΙV Peak wavelength IF = 350 mA λP Dominant wavelength IF = 350 mA λP Spectral bandwidth at 50% IF = 350 mA ∆λ0.5 35 nm Switching time IF = 20 mA tr, tf 60 ns 1) 2) 6000 465 V 11.5 mW 150 mW 6500 mcd 467 nm 470 475 nm Measured on bare chip on TO-18 header information only Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-470-31-1 Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1