EPIGAP ELC-560-10

LED - Chip
ELС-560-10
07.01.2008
rev. 03
Radiation
Type
Technology
Electrodes
Green
Standard
GaP/GaP
P (anode) up
typ. dimensions (µm)
235
117
typ. thickness
270 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm
structured, 25% covered
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
2.1
2.4
V
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
5
Radiant power1
IF = 20 mA
Φe
28
Radiant power2
IF = 20 mA
Φe
Luminous intensity1
IF = 20 mA
IV
Luminous intensity2
IF = 20 mA
IV
Peak wavelength
IF = 20 mA
λP
Dominant wavelength
IF = 20 mA
λD
563
nm
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
24
nm
V
1
550
32
µW
60
µW
1.2
mcd
2.4
mcd
560
570
nm
1
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
2
Labeling
Type
Lot N°
ΙV(typ) [mcd]
VF(typ) [V]
Quantity
ELС-560-10
Packing: Chips on adhesive film with wire-bond side on top
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 1
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545