LED - Chip ELC-740-29-40 25.02.2008 rev. 03 Radiation Type Technology Electrodes Infrared Point Source AlGaAs/AlGaAs N (cathode) up typ. dimensions (µm) Ø100 +7 -3 R typ. thickness 30 cathode gold alloy, 1.5 µm 180 310 360 - 10 + 20 150 (±25) µm R 15 5 anode 245 gold alloy, 0.5 µm 180 450 + 20 -10 PS-14 Maximum Ratings Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward current (DC) Peak forward current tP ≤ 50 µs, tP/T = 1/2 Min Max Unit IF 75 mA IFM 150 mA Typ Max Unit 2.2 V Symbol Typ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 20 mA VF 1.75 Forward voltage2 IF = 50 mA VF 1.9 Reverse voltage IR = 100 µA VR 5 Radiant power1 IF = 20 mA Φe 0.8 Radiant power1,2 IF = 50 mA Φe Peak wavelength IF = 20 mA λP Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 30 nm Switching time IF = 20 mA tr , tf 40 ns 1) 2) 730 V V 1.2 mW 2.8 mW 740 750 nm Measured on bare chip on TO-18 header with EPIGAP equipment for information only Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELC-740-29-40 We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545