LED - Chip ELC-740-27-70 25.02.2008 rev. 05 Radiation Type Technology Electrodes Infrared Point Source AlGaAs/GaAs N (cathode) up typ. dimensions (µm) Ø250 +10 -5 typ. thickness 260 (±20) µm cathode emitting area gold alloy, 1.5 µm bonding area PS-09 anode gold alloy, 0.5 µm Ø100 Maximum Ratings Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 50 mA Typ Max Unit 1.7 1.9 V IF Forward current (DC) Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power* IF = 20 mA Φe 0.3 0.6 Peak wavelength IF = 20 mA λP 730 740 Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 45 nm Switching time IF = 20 mA tr, tf 50 ns V mW 750 nm *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELC-740-27-70 We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545