SMD-LED ELS-870-195-1 16.11.2007 rev. 04 Radiation Type Technology Case Infrared SMD AlGaAs/AlGaAs SMD 1206 Description 1,6 0,5 High-power, high speed LED in standard SMD package, compact design allows for easy circuit board mounting or assembling of arrays Cathode mark 2,2 Applications Optical communications, remote control and light barriers, measurement applications and security systems, automation All dimensions in mm Tolerances: ±0,1mm R 1,05 0,2 5 0,5 2,0 3,2 Die Absolute Maximum Ratings at Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit IF 100 mA IFM 1000 mA P 200 mW Operating temperature range Tamb -20 to +85 °C Storage temperature range Tstg -30 to +100 °C Typ Max Unit 1,7 V DC forward current tp ≤ 10 µs, tp/T ≤ 0.1 Peak forward current Power dissipation Electrical and Optical Characteristics at Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 20 mA VF 1,4 Forward voltage IF = 100 mA VF 1,5 Reverse voltage IF = 10 µA VR 5 Radiant power IF = 100 mA Φe 20 Radiant intensity IF = 100 mA Ιe Peak wavelength IF = 100 mA λp Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 40 nm Viewing angle IF = 100 mA ϕ 150 deg. Switching time IF = 100 mA tr , t f 15 ns 850 V V 25 mW 7,2 mW/sr 870 880 nm Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545