Photodiode-Chip EPC-440-2.5 Preliminary 11.04.2007 rev. 03/07 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P (anode) up typ. dimensions (µm) 2460 2400 2200 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet range, low dark currents, low cost chip with high degradation stability anode bond gold 1.0 µm cathode Applications special light barriers, sensors for flame control and automation gold alloy, 0.5 µm Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 4.8 mm² Temperature coefficient of ID TC(ID) 7.0 %/K Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit ID 15 40 pA Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions VR = 5 V Dark current Symbol Min Peak sensitivity wavelength VR = 0 V λp 440 nm Responsivity at λP* VR = 0 V Sλ 0.17 A/W Sensitivity range at 1% VR = 0 V λmin, λmax Spectral bandwidth at 50% VR = 0 V ∆λ0.5 Shunt resistance VR = 10 mV RD Noise equivalent power λ = 440 nm NEP Junction capacitance VR = 0 V CJ 1000 pF Switching time (RL = 50 Ω) VR = 5 V tr , tf 1/60 ns <110 570 nm 180 80 nm 100 1.3x10 GΩ -14 W/ Hz *Measured on bare chip on TO-18 header Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPC-440-2.5 Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip EPC-440-2.5 Preliminary 11.04.2007 rev. 03/07 Typical responsitivity spectrum Responsivity, A/W 0,1 0,01 1E-3 100 200 300 400 500 600 Wavelength, nm EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2