Photodiode-Chip EPC-440-3.6 Preliminary 11.04.2007 rev. 03/07 Wavelength range Type Technology Electrodes UV-blue-green Schottky Contact GaP P (anode) up 3560 typ. dimensions (µm) 3500 3300 typ. thickness Description 300 µm High spectral sensitivity in the blue and ultraviolet range, low dark currents, low cost chip with high degradation stability anode bond gold 1.0 µm cathode Applications special light barriers, sensors for flame control and automation gold alloy, 0.5 µm PD-06 Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 10.9 mm² Temperature coefficient of ID TC(ID) 7.0 %/K Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit ID 20 80 pA Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions VR = 5 V Dark current Symbol Min Peak sensitivity wavelength VR = 0 V λp 440 nm Responsivity at λP* VR = 0 V Sλ 0.17 A/W Sensitivity range at 1% VR = 0 V λmin, λmax Spectral bandwidth at 50% VR = 0 V ∆λ0.5 Dark resistance VR = 10 mV RD Noise equivalent power λ = 440 nm NEP Junction capacitance VR = 0 V CJ 2.6 nF Switching time (RL = 50 Ω) VR = 5 V tr , tf 1/130 ns <110 570 nm 180 50 nm 70 1.5x10 GΩ -14 W/ Hz *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPC-440-3.6 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip EPC-440-3.6 Preliminary 11.04.2007 rev. 03/07 Typical responsivity spectrum Responsivity, A/W 0,1 0,01 1E-3 100 200 300 400 500 600 Wavelength, nm EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2