Photodiode-Chip EPC-660-0.5 Preliminary 11.04.2007 rev. 06/07 Wavelength range Type Technology Electrodes Red, selective Integrated filter AlGaAs/GaAs P (anode) up 460 typ. dimensions (µm) 360 300 typ. thickness Description Narrow response range (660 nm peak) 260 (±25) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm Applications Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit A 0,17 mm² Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Peak sensitivity wavelength VR = 0 V λP Spectral range at 50 % VR = 0 V λ0.5 Responsivity at λP1 VR = 0 V Sλ 0.20 A/W Responsivity at λP2 VR = 0 V Sλ 0.42 A/W Spectral bandwidth at 50% VR = 0 V ∆λ0.5 80 nm Dark current VR = 1 V ID 40 Junction capacitance VR = 0 V CJ 40 pF Switching time VR = 1 V tr, tf 15/30 ns 660 620 nm 700 nm 200 pA 1 Measured on bare chip on TO-18 header Measured on epoxy covered chip on TO-18 header 2 Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPС-660-0.5 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip EPC-660-0.5 Preliminary 11.04.2007 rev. 06/07 Typical responsivity spectrum Sensitivity (arb. units) 1,0 0,8 0,6 0,4 0,2 0,0 500 550 600 650 700 750 800 Wavelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2