Photodiode-Chip EPC-880-1.4 Preliminary 11.04.2007 rev. 03/07 Wavelength range Type Technology Electrodes Infrared, selective Integrated filter AlGaAs/GaAs P (anode) up typ. dimensions (µm) 1360 1000 960 typ. thickness 300 µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm Ø100 PD-13 Description Infrared-selective photodiode with narrow response range (810 - 950 nm) Applications Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Parameter Test сonditions Symbol Value Unit A 1.79 mm² Operating temperature range Tamb -40 to +125 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit 2.5 nA Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Dark current VR = 1 V ID 1.0 Peak sensitivity VR = 0 V λP 890 Spectral range at 50 % VR = 0 V λ0.5 Spectral bandwidth at 50% VR = 0 V ∆λ0.5 115 nm Responsivity at λP1 VR = 0 V Sλ 0.27 A/W Switching time VR = 1 V tr, tf 200 ns 820 nm 935 nm 1 Measured on bare chip on TO-18 header Labeling Type Typ. ID [pA] Typ. Sλ[A/W] Lot N° Quantity EPС-880-1.4 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode-Chip EPC-880-1.4 Preliminary 11.04.2007 rev. 03/07 Typical spectral response [A/W] 0,6 0,5 0,4 0,3 0,2 0,1 0,0 700 750 800 850 900 Wavelength [nm] 950 1000 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2