Photodiode EPD-1300-0-3.0 Preliminary 6/21/2007 rev. 04/07 Wavelength Type Technology Case Infrared Planar InGaAs/InP TO-39 Description Chip Location Ø9,14 Ø7,62 ± 0,1 8,13 5,90 ± 0,1 9, 90 ± 0,45 0, 1 3,25 ± 0,1 Anode ± 0,05 0 0, Chip Location Applications Optical communications, safety equipment, light barriers ± 2,00 80 ± 1,0 0, 13,5 InGaAs-Photodiode mounted in TO-39 standard package . High spectral sensitivity in the infrared range (NIR , SWIR) due to large active area. 5 45, ELC-70 00° Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 7.0 mm² Temperature coefficient TC(ID) 7.4 %/K Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C Typ Max Unit Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol IF = 10 mA VF IR = 10 µA VR 5 Sensitivity range at 10 % VR = 0 V λ 800 Spectral bandwidth at 50 % VR = 0 V ∆λ0,5 680 nm Responsivity at 1300 nm VR = 0 V Sλ 0.9 A/W Dark current VR = 5 V ID 5 Shunt resistance VR = 10 mV RSH Noise equivalent power λ = 1300 nm NEP Specific detectivity λ = 1300 nm D* 5.1x10 VR = 0 V CJ 1000 VR = 0 V Ee = 1mW/cm² IPh 15 Forward voltage Breakdown voltage 2) 1) Junction capacitance Photo current at 1300 nm2) 1) 2) Min 0.6 15 V V 1750 30 30 nm nA MΩ 5.2x10-14 W/ Hz cm ⋅ Hz ⋅ W −1 12 1300 pF µA measured on bare chip for information only Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Photodiode EPD-1300-0-3.0 Preliminary 6/21/2007 rev. 04/07 Typical Optical Responsivity (A/W ) 1,0 0,8 0,6 0,4 0,2 0,0 400 600 800 1000 1200 1400 1600 1800 W avelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2