SMD-Photodiode EPD-525-1-0.9-1 28.01.2008 rev. 01 Wavelength Type Technology Case Green SMD GaP SMD 1206 Description Narrow bandwidth and high spectral sensitivity in the green visible range (500…600 nm), compact design in standard SMD package allows for easy circuit board mounting and assembling of arrays Applications Alarm systems, light barriers, special sensors for automotive industry, for nearly Vλ matched detectors Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Test сonditions Parameter Symbol Value Unit A 0.62 mm² Temperature coefficient of ID TCID 5 %/K Operating temperature range Tamb -20 to +85 °C Storage temperature range Tstg -40 to +125 °C Typ Max Unit Active area Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min IR = 10 µA VR 5 Dark current VR = 5 V ID 5 Peak sensitivity wavelength VR = 0 V λp 525 nm Responsivity at λP VR = 0 V Sλ 0.3 A/W VR = 0 V λmin, λmax VR = 0 V ∆λ0.5 70 Shunt resistance VR = 10 mV RSH 300 Noise equivalent power λ = 525 nm Specific detectivity λ = 525 nm D* 1.8x10 VR = 0 V CJ 100 pF VR = 1 V VR = 0 V Ev = 1000 lx tr, tf 35 ns IPh 70 nA Breakdown voltage1) Sensitivity range at 1% 1) Spectral bandwidth at 50% Junction capacitance Switching time (RL = 50 Ω) Photocurrent at illuminant A1,2) 1) 2) V 30 410 NEP 580 pA nm nm GΩ -15 W/ Hz 13 cm ⋅ Hz ⋅ W −1 4.4x10 for information only Standard light source with a color temperature of 2856 K Labeling Type Lot N° Typ. Sλ [A/W] Quantity EPD-525-1-0.9-1 *Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 SMD-Photodiode EPD-525-1-0.9-1 28.01.2008 Optical responsivity (typically) Relative Photocurrent vs. Temperature 1,30 1,0 UR = 5V TK = 0,25%/K 1,25 0,8 1,20 1,15 Relative Photocu rren t Sensitivity (arb. units) rev. 01 0,6 0,4 1,10 1,05 1,00 0,95 0,2 0,90 0,85 0,0 400 450 500 550 600 0,80 -40 -20 0 20 40 60 80 100 120 Temperature (°C) Wavelength [nm] Dark Current vs. Temperature 100 Allowable soldering profile UR = 5V TK = 1,05 times/K D ark Cu rrent (p A) 10 1 0,1 -40 -20 0 20 40 60 80 100 120 Temperature (°C) We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 2 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545