ESMT F25L04UA

ESMT
F25L04UA
Flash
„
3V Only 4 Mbit Serial Flash Memory
FEATURES
y
Single supply voltage 2.7~3.6V
y
Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz; 75MHz; 100MHz
y
Auto Address Increment (AAI) Programming
- Decrease total chip programming time over
Byte-Program operations
y
Low power consumption
- Active current :40mA
- Standby current : 25 μ A
y
SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
y
End of program or erase detection
y
Reliability
- 100,000 program/erase cycles typically
- 10 years Data Retention
y
Write Protect ( WP )
y
Hold Pin ( HOLD )
y
Program
- Byte program time 8 μ s(typical)
y
Package avalible
- 8-pin SOIC 150-mil
y
Erase
- Chip erase time 11s(typical)
- Sector erase time 0.7s(typical)
ORDERING INFORMATION
Part No.
Speed
Package
COMMENTS
F25L04UA -50PG
50MHz
8 lead SOIC
Pb-free
F25L04UA -75PG
75MHz
8 lead SOIC
Pb-free
F25L04UA -100PG 100MHz 8 lead SOIC
Pb-free
GENERAL DESCRIPTION
The F25L04UA is a 4Megabit, 3V only CMOS Serial Flash
memory device. ESMT’s memory devices reliably store memory
data even after 100,000 program and erase cycles.
erased individually without affecting the data in other sectors.
Whole chip erase capabilities provide the flexibility to revise the
data in the device.
The F25L04UA features a sector erase architecture. The device
memory array is divided into one 8K bytes, two 4K bytes, one
16K bytes, one 32K bytes, and seven 64K bytes. Sectors can be
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
1/25
ESMT
F25L04UA
PIN CONFIGURATIONS
8-PIN SOIC
0
CE
1
8
VDD
SO
2
7
HOLD
WP
3
6
SCK
VSS
4
5
SI
PIN Description
Symbol
Pin Name
Functions
SCK
Serial Clock
To provide the timming for serial input and
output operations
SI
Serial Data Input
To transfer commands, addresses or data
serially into the device.
Data is latched on the rising edge of SCK.
SO
Serial Data Output
To transfer data serially out of the device.
Data is shifted out on the falling edge of
SCK.
CE
Chip Enable
To activate the device when CE is low.
WP
Write Protect
The Write Protect ( WP ) pin is used to
enable/disable BPL bit in the status
register.
HOLD
Hold
VDD
Power Supply
VSS
Ground
To temporaiily stop serial communication
with SPI flash memory without resetting
the device.
To provide power.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
2/25
ESMT
F25L04UA
SECTOR STRUCTURE
Table1 : F25L04UA Sector Address Table
Symbol
Sector Size
(Kbytes)
Address range
Sector Address
A18
A17
A16
A15
A14
A13
A12
11
8KB
7E000H – 7FFFFH
1
1
1
1
1
1
X
10
4KB
7D000H – 7DFFFH
1
1
1
1
1
0
1
9
4KB
7C000H – 7CFFFH
1
1
1
1
1
0
0
8
16KB
78000H – 7BFFFH
1
1
1
1
0
X
X
7
32KB
70000H – 77FFFH
1
1
1
0
X
X
X
6
64KB
60000H – 6FFFFH
1
1
0
X
X
X
X
5
64KB
50000H – 5FFFFH
1
0
1
X
X
X
X
4
64KB
40000H – 4FFFFH
1
0
0
X
X
X
X
3
64KB
30000H – 3FFFFH
0
1
1
X
X
X
X
2
64KB
20000H – 2FFFFH
0
1
0
X
X
X
X
1
64KB
10000H – 1FFFFH
0
0
1
X
X
X
X
0
64KB
00000H – 0FFFFH
0
0
0
X
X
X
X
Table2 : F25L04UA Block Protection Table
Protection Level
BP1
BP0
Protected Memory Area
0
0
0
None
1(1/8 memory array)
0
1
70000H –7FFFFH
2(1/4 memory array)
1
0
60000H –7FFFFH
3(all memory array)
1
1
00000H –7FFFFH
Block Protection (BP1, BP0)
Block Protection Lock-Down (BPL)
The Block-Protection (BP1, BP0) bits define the size of the
memory area, as defined in Table2 to be software protected
against any memory Write (Program or Erase) operations. The
Write-Status-Register (WRSR) instruction is used to program the
WP pin driven low (VIL), enables the Block-Protection
-Lock-Down (BPL) bit. When BPL is set to 1, it prevents any
BP1 and BP0 bits as long as WP is high or the
Block-Protection-Look (BPL) bit is 0. Chip-Erase can only be
executed if Block-Protection bits are both 0. After power-up, BP1
and BP0 are set to1.
Elite Semiconductor Memory Technology Inc.
further alteration of the BPL, BP1, and BP0 bits. When the WP
pin is driven high (VIH), the BPL bit has no effect and its value is
“Don’t Care”. After power-up, the BPL bit is reset to 0.
Publication Date: Jan. 2009
Revision: 1.2
3/25
ESMT
F25L04UA
FUNTIONAL BLOCK DIAGRAM
Address
Buffers
and
Latches
SuperFlash
Memory
X-Decoder
Y-Decoder
I/O Butters
and
Data Latches
Control Logic
Serial Interface
CE
SCK
SI
Elite Semiconductor Memory Technology Inc.
SO
WP
HOLD
Publication Date: Jan. 2009
Revision: 1.2
4/25
ESMT
F25L04UA
Hold Operation
HOLD pin is used to pause a serial sequence underway with the
SPI flash memory without resetting the clocking sequence. To
activate the HOLD mode, CE must be in active low state. The
HOLD mode begins when the SCK active low state coincides
with the falling edge of the HOLD signal. The HOLD mode ends
when the HOLD signal’s rising edge coincides with the SCK
active low state.
If the falling edge of the HOLD signal does not coincide with the
SCK active low state, then the device enters Hold mode when the
SCK next reaches the active low state.
coincide with the SCK active low state, then the device exits in
Hold mode when the SCK next reaches the active low state. See
Figure 3 for Hold Condition waveform.
Once the device enters Hold mode, SO will be in high impedance
state while SI and SCK can be VIL or VIH.
If CE is driven active high during a Hold condition, it resets the
internal logic of the device. As long as HOLD signal is low, the
memory remains in the Hold condition. To resume
communication with the device, HOLD must be driven active
high, and CE must be driven active low. See Figure 17 for Hold
timing.
Similarly, if the rising edge of the HOLD signal does not
S CK
HO L D
A ctive
A ctive
Ho ld
Ho ld
A ctive
Figure 3 : HOLD CONDITION WAVEFORM
Write Protection
F25L04UA provides software Write protection.
The Write Protect pin ( WP ) enables or disables the lockdown
function of the status register. The Block-Protection bits (BP1,
BP0, and BPL) in the status register provide Write protection to
the memory array and the status register. See Table 2 for
Block-Protection description.
Write Protect Pin ( WP )
The Write Protect ( WP ) pin enables the lock-down function of
TABLE3: CONDITIONS TO EXECUTE
WRITE-STATUS- REGISTER (WRSR)
INSTRUCTION
WP
BPL
Execute WRSR Instruction
L
1
Not Allowed
L
0
Allowed
H
X
Allowed
the BPL bit (bit 7) in the status register. When WP is driven low,
the execution of the Write-Status-Register (WRSR) instruction is
determined by the value of the BPL bit (see Table 3). When WP
is high, the lock-down function of the BPL bit is disabled.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
5/25
ESMT
F25L04UA
Status Register
The software status register provides status on whether the flash
memory array is available for any Read or Write operation,
whether the device is Write enabled, and the state of the memory
Write protection. During an internal Erase or Program operation,
the status register may be read only to determine the completion
of an operation in progress.
Table 4 describes the function of each bit in the software status
register.
TABLE 4: SOFTWARE STATUS REGISTER
Bit
Name
0
BUSY
1
WEL
2
3
4:5
BP0
BP1
RES
6
AAI
7
BPL
Function
1 = Internal Write operation is in progress
0 = No internal Write operation is in progress
1 = Device is memory Write enabled
0 = Device is not memory Write enabled
Indicate current level of block write protection (See Table 2)
Indicate current level of block write protection (See Table 2)
Reserved for future use
Auto Address Increment Programming status
1 = AAI programming mode
0 = Byte-Program mode
1 = BP1, BP0 are read-only bits
0 = BP1, BP0 are read/writable
Default at
Power-up
Read/Write
0
R
0
R
1
1
0
R/W
R/W
N/A
0
R
0
R/W
Note1 : Only BP0,BP1 and BPL are writable
Note2 : All register bits are volatility
Note3 : All area are protected at power-on (BP1=1,BP0=1)
Busy
The Busy bit determines whether there is an internal Erase or
Program operation in progress. A “1” for the Busy bit indicates
the device is busy with an operation in progress. A “0” indicates
the device is ready for the next valid operation.
Write Enable Latch (WEL)
The Write-Enable-Latch bit indicates the status of the internal
memory Write Enable Latch. If the Write-Enable-Latch bit is set to
“1”, it indicates the device is Write enabled. If the bit is set to “0”
(reset), it indicates the device is not Write enabled and does not
accept any memory Write (Program/ Erase) commands. The
Write-Enable-Latch bit is automatically reset under the following
conditions:
Power-up
Write-Disable (WRDI) instruction completion
Byte-Program instruction completion
Auto Address Increment (AAI) programming reached its
highest memory address
• Sector-Erase instruction completion
• Block-Erase instruction completion
• Chip-Erase instruction completion
•
•
•
•
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
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ESMT
F25L04UA
Instructions
Instructions are used to Read, Write (Erase and Program), and
configure the F25L04UA. The instruction bus cycles are 8 bits
each for commands (Op Code), data, and addresses. Prior to
executing any Byte-Program, Auto Address Increment (AAI)
programming, Sector-Erase, Block-Erase, or Chip-Erase
instructions, the Write-Enable (WREN) instruction must be
executed first. The complete list of the instructions is provided in
Table 5. All instructions are synchronized off a high to low
transition of CE . Inputs will be accepted on the rising edge of
SCK starting with the most significant bit. CE must be driven
low before an instruction is entered and must be driven high after
the last bit of the instruction has been shifted in (except for Read,
Read-ID and Read-Status-Register instructions). Any low to high
transition on CE , before receiving the last bit of an instruction
bus cycle, will terminate the instruction in progress and return the
device to the standby mode.
Instruction commands (Op Code), addresses, and data are all
input from the most significant bit (MSB) first.
TABLE 5: DEVICE OPERATION INSTRUCTIONS
Cycle Type/
Operation1,2
Read
High-Speed-Read
Sector-Erase4,5
Chip-Erase5
5
Byte-Program
Auto Address Increment word programming (AAI)6
Read-Status-Register
(RDSR)
Enable-Write-Status-Register
8
(EWSR)
Write-Status-Register
(WRSR)8
Write-Enable (WREN) 11
Write-Disable (WRDI)
Jedec-Read-ID (JEDEC-ID) 10
1.
2.
3.
4.
5.
6.
7.
8.
Max
Freq
MHz
33
Bus Cycle4
1
2
3
50
SIN
03H
0BH
20H
60H
02H
SOUT
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
SIN
A23-A16
A23-A16
A23-A16
A23-A16
SOUT
Hi-Z
Hi-Z
Hi-Z
Hi-Z
SIN
A15-A8
A15-A8
A15-A8
A15-A8
SOUT
Hi-Z
Hi-Z
Hi-Z
Hi-Z
4
SIN
A7-A0
A7-A0
A7-A0
A7-A0
SOUT SIN
Hi-Z X
Hi-Z X
Hi-Z
Hi-Z DIN
5
SOUT
DOUT
X
Hi-Z
and
AFH
Hi-Z
A23-A16
Hi-Z
A15-A8
Hi-Z
A7-A0
Hi-Z
DIN
Hi-Z
75
05H
Hi-Z
X
DOUT
-
Note7
-
Note7
-
Note7
and
50H
Hi-Z
-
-
-
-
-
-
-
-
100
01H
Hi-Z
Data
Hi-Z
-
-
-.
-
-
-
06H
04H
9FH
Hi-Z
Hi-Z
Hi-Z
X
-
-
-
-
-
-
-
8CH
X
8CH
X
8CH
-
-
SIN
6
SOUT
X
DOUT
Operation: SIN = Serial In, SOUT = Serial Out
X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary)
One bus cycle is eight clock periods.
Sector addresses: use AMS-A12, remaining addresses can be VIL or VIH
Prior to any Byte-Program, AAI-Program, Sector-Erase ,or Chip-Erase operation, the Write-Enable (WREN) instruction must be
executed.
To continue programming to the next sequential address location, enter the 8-bit command, AFH, followed by the data to be
programmed.
The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE .
The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction
of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both
instructions effective.
9. The Jedec-Read-ID is continuous with on going clock cycles until terminated by a low to high transition on CE .
10. The Jedec-Read-ID is output first byte 8CH as manufacture ID; second byte 8CH as top memory type; third byte 8CH as memory
capacity.
11. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other.
The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both instructions
effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR can reset WREN.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
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ESMT
F25L04UA
Read (33 MHz)
The Read instruction supports up to 33 MHz, it outputs the data
starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a
(wrap-around) of the address space, i.e. for 4 Mbit density, once
the data from address location 7FFFFH had been read, the next
output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command,
low to high transition on CE . The internal address pointer will
automatically increment until the highest memory address is
reached. Once the highest memory address is reached, the
address pointer will automatically increment to the beginning
03H, followed by address bits [A23-A0]. CE must remain active
low for the duration of the Read cycle. See Figure 4 for the Read
sequence.
CE
MODE3
1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
70
SCK MODE1
03
SI
MSB
SO
ADD.
ADD.
ADD.
MSB
HIGH IMPENANCE
N
N+1
N+2
N+3
N+4
DOUT
DOUT
DOUT
DOUT
D OUT
MSB
Figure 4 : READ SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
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F25L04UA
Fast-Read (50 MHz ; 75 MHz; 100 MHz)
through all addresses until terminated by a low to high transition
The High-Speed-Read instruction supporting up to 100 MHz is
initiated by executing an 8-bit command, 0BH, followed by
on CE . The internal address pointer will automatically increment
until the highest memory address is reached. Once the highest
memory address is reached, the address pointer will
automatically increment to the beginning (wrap-around) of the
address space, i.e. for 4 Mbit density, once the data from address
location 07FFFFH has been read, the next output will be from
address location 000000H.
address bits [A23-A0] and a dummy byte. CE must remain active
low for the duration of the High-Speed-Read cycle. See Figure 5
for the High-Speed-Read sequence.
Following a dummy byte (8 clocks input dummy cycle), the
High-Speed-Read instruction outputs the data starting from the
specified address location. The data output stream is continuous
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
0B
SI
MSB
SO
15 16
ADD.
23 24
ADD.
31 32
ADD.
39 40
47 48
55 56
63 64
71 72
80
X
MSB
HIGH IMPENANCE
N
N+1
N+2
N+3
N+4
DOUT
DOUT
DOUT
DOUT
DOUT
MSB
Note : X = Dummy Byte : 8 Clocks Input Dummy (VIL or VIH)
Figure 5 : HIGH-SPEED-READ SEQUENCE
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Publication Date: Jan. 2009
Revision: 1.2
9/25
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F25L04UA
Byte-Program
The Byte-Program instruction programs the bits in the selected
byte to the desired data. The selected byte must be in the erased
state (FFH) when initiating a Program operation. A Byte-Program
instruction applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction is initiated by executing an 8-bit command, 02H,
followed by address bits [A23-A0]. Following the address, the data
is input in order from MSB (bit 7) to LSB (bit 0). CE must be
driven high before the instruction is executed. The user may poll
the Busy bit in the software status register or wait TBP for the
completion of the internal self-timed Byte-Program operation.
See Figure 6 for the Byte-Program sequence.
instruction must be executed. CE must remain active low for
the duration of the Byte-Program instruction. The Byte-Program
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
02
SI
ADD.
MSB
SO
15 16
MSB
23 24
ADD.
31 32
ADD.
39
DIN
MSB LSB
HIGH IMPENANCE
Figure 6 : BYTE-PROGRAM SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
10/25
ESMT
F25L04UA
Auto Address Increment (AAI) Program
The AAI program instruction allows multiple bytes of data to be
programmed without re-issuing the next sequential address
location. This feature decreases total programming time when
the entire memory array is to be programmed. An AAI program
instruction pointing to a protected memory area will be ignored.
The selected address range must be in the erased state (FFH)
when initiating an AAI program instruction.
Prior to any write operation, the Write-Enable (WREN) instruction
must be executed. The AAI program instruction is initiated by
executing an 8-bit command, AFH, followed by address bits
[A23-A0]. Following the addresses, the data is input sequentially
BUSY bit in the software status register or wait TBP for the
completion of each internal self-timed Byte-Program cycle. Once
the device completes programming byte, the next sequential
address may be program, enter the 8-bit command, AFH,
followed by the data to be programmed. When the last desired
byte had been programmed, execute the Write-Disable (WRDI)
instruction, 04H, to terminate AAI. After execution of the WRDI
command, the user must poll the Status register to ensure the
device completes programming. See Figure 7 for AAI
programming sequence.
There is no wrap mode during AAI programming; once the
highest unprotected memory address is reached, the device will
exit AAI operation and reset the Write-Enable-Latch bit (WEL = 0).
from MSB (bit 7) to LSB (bit 0). CE must be driven high before
the AAI program instruction is executed. The user must poll the
TBP
TBP
CE
MODE3
0 1 2 3 4 5 6 7 8
15 16
31 32 333435 36 373839
23 24
0 1 2 3 4 5 6 7 8 9 10 11 1213 14 15
0 1
SCK MODE0
SI
AF
A[23,16]
A[15,8]
A[7,0]
Data Byte 1
AF
Data Byte 2
TBP
CE
0 1 2 3 4 5 6 7 8 9 101112 1314 15
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7 8 9 10 11 1213 14 15
SCK
SI
AF
Last Data Byte
04
Write Disable (WRDI)
Instruction to terminate
AAI Operation
SO
05
Read Status Register(RDSR)
Instruction to verify end of
AAI Operation
DOUT
Figure 7 : AUTO ADDRESS INCREMENT (AAI) PROGRAM SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
11/25
ESMT
F25L04UA
Sector-Erase
The Sector-Erase instruction clears all bits in the selected sector
to FFH. A Sector-Erase instruction applied to a protected
memory area will be ignored. Prior to any Write operation, the
[AMS-A12] (AMS = Most Significant address) are used to determine
the sector address (SAX), remaining address bits can be VIL or
VIH. CE must be driven high before the instruction is executed.
The user may poll the Busy bit in the software status register or
wait TSE for the completion of the internal self-timed
Sector-Erase cycle. See Figure 8 for the Sector-Erase sequence.
Write-Enable (WREN) instruction must be executed. CE must
remain active low for the duration of the any command sequence.
The Sector-Erase instruction is initiated by executing an 8-bit
command, 20H, followed by address bits [A23-A0]. Address bits
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
02
SI
A DD.
MSB
SO
15 16
23 24
ADD.
31 32
A DD.
39
D IN
MSB
HIGH IMPENANCE
FIGURE 8 : SECTOR-ERASE SEQUENCE
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Publication Date: Jan. 2009
Revision: 1.2
12/25
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F25L04UA
Chip-Erase
The Chip-Erase instruction clears all bits in the device to FFH. A
Chip-Erase instruction will be ignored if any of the memory area
is protected. Prior to any Write operation, the Write-Enable
60H. CE must be driven high before the instruction is executed.
The user may poll the Busy bit in the software status register or
wait TCE for the completion of the internal self-timed Chip-Erase
cycle.
See Figure 9 for the Chip-Erase sequence.
(WREN) instruction must be executed. CE must remain active
low for the duration of the Chip-Erase instruction sequence. The
Chip-Erase instruction is initiated by executing an 8-bit command,
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7
60
SI
MSB
HIGH IMPENANCE
SO
FIGURE 9 : CHIP-ERASE SEQUENCE
Read-Status-Register (RDSR)
The Read-Status-Register (RDSR) instruction allows reading of
the status register. The status register may be read at any time
even during a Write (Program/Erase) operation.
When a Write operation is in progress, the Busy bit may be
checked before sending any new commands to assure that the
new commands are properly received by the device.
and remain low until the status data is read.
Read-Status-Register is continuous with ongoing clock cycles
until it is terminated by a low to high transition of the CE
See Figure 10 for the RDSR instruction sequence.
CE must be driven low before the RDSR instruction is entered
CE
0
MODE3
1
2
3
4
5
6
7
8
9
Bit7
Bit6
10
11
12
13
14
Bit2
Bit1
SCK MODE1
05
SI
MSB
SO
HIGH IMPENANCE
MSB
Bit5
Bit4
Bit3
Bit0
Status
Register Out
Figure10 : READ-STATUS-REGISTER (RDSR) SEQUENCE
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Publication Date: Jan. 2009
Revision: 1.2
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F25L04UA
Write-Enable (WREN)
The Write-Enable (WREN) instruction sets the WriteEnable-Latch bit to 1 allowing Write operations to occur.
The WREN instruction must be executed prior to any Write
(Program/Erase) operation. CE must be driven high before the
WREN instruction is executed.
CE
0 1 2 3 4 5 6 7
MODE3
SCK MODE0
06
SI
MSB
HIGH IMPENANCE
SO
FIGURE 11 : WRITE ENABLE (WREN) SEQUENCE
Write-Disable (WRDI)
The Write-Disable (WRDI) instruction resets the Write-Enable-Latch
bit and AAI bit to 0 disabling any new Write operations from occurring.
CE must be driven high before the WRDI instruction is executed.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7
04
SI
MSB
SO
HIGH IMPENANCE
Figure 12 : WRITE DISABLE (WRDI) SEQUENCE
Enable-Write-Status-Register (EWSR)
The Enable-Write-Status-Register (EWSR) instruction arms the
Write-Status-Register (WRSR) instruction and opens the status
register for alteration. The Enable-Write-Status-Register
instruction does not have any effect and will be wasted, if it is not
followed immediately by the Write-Status-Register (WRSR)
instruction. CE must be driven low before the EWSR instruction
is entered and must be driven high before the EWSR instruction
is executed.
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Publication Date: Jan. 2009
Revision: 1.2
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F25L04UA
Write-Status-Register (WRSR)
The Write-Status-Register instruction works in conjunction with
the Enable-Write-Status-Register (EWSR) instruction to write
new values to the BP1, BP0, and BPL bits of the status register.
The Write-Status-Register instruction must be executed
immediately after the execution of the Enable-Write-Status
-Register instruction (very next instruction bus cycle). This
two-step instruction sequence of the EWSR instruction followed
by the WRSR instruction works like SDP (software data
protection) command structure which prevents any accidental
alteration of the status register values. The Write-Status-Register
When WP is high, the lock-down function of the BPL bit is
disabled and the BPL, BP0, and BP1 bits in the status register
instruction will be ignored when WP is low and BPL bit is set to
WP and BPL functions. CE must be driven low before the
command sequence of the WRSR instruction is entered and
driven high before the WRSR instruction is executed. See Figure
13 for EWSR and WRSR instruction sequences.
“1”. When the WP is low, the BPL bit can only be set from “0” to
“1” to lockdown the status register, but cannot be reset from “1” to
“0”.
can all be changed. As long as BPL bit is set to 0 or WP pin is
driven high (VIH) prior to the low-to-high transition of the CE pin
at the end of the WRSR instruction, the BP0, BP1, and BPL bit in
the status register can all be altered by the WRSR instruction. In
this case, a single WRSR instruction can set the BPL bit to “1” to
lock down the status register as well as altering the BP0 and BP1
bit at the same time. See Table 3 for a summary description of
CE
MODE3
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7 8 9 1011 12 13 1415
SCK MODE0
50
SI
01
MSB
SO
STATUS
REGISTER IN
7 6 5 4 3 2 1 0
MSB
HIGH IMPENANCE
Figure 13 : ENABLE-WRITE-STATUS-REGISTER (EWSR) AMD WRITE-STATUS-REGISTER (WRSR) SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
15/25
ESMT
F25L04UA
Jedec-Read-ID (JEDEC-ID)
The Jedec-Read-ID instruction is for reading the Manufacturer ID of 1-byte and followed by Device ID of 2-byte. The ESMT
Manufacturer ID is 8CH.,the memory type ID is 8CH as the first-byte device ID, the memory capacity ID is 8CH as the second-byte
device ID. The instruction sequence is shown in Fig14. The Jedec-Read-ID instruction is terminated by a low to high transition on CE
at any time during data output.
Figure 14 : Jedec-Read-ID (JEDEC-ID)
CE
MODE3
0 1 2 3 4 5 6 7 8 9 1011 12 13 14 15 16 17 18 1920 2122 23 24 2526 27 282930 31 32 33 34
SCK MODE0
9F
SI
SO
HIGH IMPENANCE
8C
MSB
8C
8C
MSB
Jedec-Read-ID DATA
Manufacture’s ID
Device ID
Memory Type
Memory Capacity
Byte1
Byte2
Byte3
8CH
8CH
8CH
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
16/25
ESMT
F25L04UA
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current (Note1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Note : 1. Output shorted for no more than one second. No more than one output shorted at a time.
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. <5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 19 and 20
OPERATING RANGE
Parameter
Operating Supply Voltage
Symbol
VDD (for FCLK ≦ 75MHz)
VDD (for FCLK = 100MHz)
Ambient Operating
Temperature
TA
Value
2.7~3.6
3.2~3.6
Unit
0~70
°C
V
TABLE 7: DC OPERATING CHARACTERISTICS
Symbol
Parameter
Min
Limits
Max
15
Units
mA
Test Conditions
IDDR
Read Current
IDDW
Program and Erase Current
40
mA
CE =VDD
ISB
ILI
ILO
VIL
VIH
VOL
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
25
1
1
0.8
µA
µA
µA
V
V
V
CE =VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
VOH
Output High Voltage
V
IOH=-100 µA, VDD=VDD Min
0.7 VDD
0.2
VDD-0.2
CE =0.1 VDD/0.9 [email protected] MHz, SO=open
TABLE 8 : RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
1.
TPU-READ1
TPU-WRITE1
Parameter
Minimum
Units
VDD Min to Read Operation
10
µs
VDD Min to Write Operation
10
µs
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
COUT1
Output Pin Capacitance
CIN1
Input Capacitance
Test Condition
Maximum
VOUT = 0V
12 pF
VIN = 0V
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
17/25
ESMT
F25L04UA
TABLE 10: RELIABILITY CHARACTERISTICS
Symbol
1.
Parameter
NEND1
Endurance
TDR1
Data Retention
ILTH1
Latch Up
Typical Specification
Units
Test Method
100,000
Cycles
JEDEC Standard A117
10
Years
JEDEC Standard A103
100 + IDD
mA
JEDEC Standard 78
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11 : AC OPERATING CHARACTERISTICS
Normal 33MHz Fast 50 MHz
Symbol
Fast 75 MHz Fast 100 MHz
Parameter
Units
Min
Max
Min
33
Max
Min
50
Max
Min
FCLK
Serial Clock Frequency
TSCKH
Serial Clock High Time
13
9
6
5
ns
TSCKL
Serial Clock Low Time
13
9
6
5
ns
TCES1
CE Active Setup Time
5
5
5
5
ns
TCEH1
CE Active Hold Time
5
5
5
5
ns
TCHS1
CE Not Active Setup Time
5
5
5
5
ns
TCHH1
CE Not Active Hold Time
5
5
5
5
ns
TCPH
CE High Time
100
100
100
100
ns
TCHZ
CE High to High-Z Output
TCLZ
SCK Low to Low-Z Output
0
0
0
0
ns
TDS
Data In Setup Time
3
3
3
3
ns
TDH
Data In Hold Time
3
3
3
3
ns
THLS
HOLD Low Setup Time
5
5
5
5
ns
THHS
HOLD High Setup Time
5
5
5
5
ns
THLH
HOLD Low Hold Time
5
5
5
5
ns
THHH
HOLD High Hold Time
5
5
5
5
ns
THZ
HOLD Low to High-Z Output
9
9
9
9
ns
TLZ
HOLD High to Low-Z Output
9
9
9
9
ns
TOH
Output Hold from SCK Change
TV
Output Valid from SCK
9
0
9
0
12
75
Max
9
0
9
100
9
0
9
MHz
ns
ns
7
ns
1. Relative to SCK.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
18/25
ESMT
F25L04UA
ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Symbol
Typ.(2)
Max.(3)
Unit
Sector Erase Time
TSE
0.7
15
sec
Chip Erase Time
TCE
11
50
sec
Byte Programming Time
TBP
9
300
us
Chip Programming Time
4.5
13.5
sec
Erase/Program Cycles(1)
100,000
-
Cycles
Notes:
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3V.
3.Maximum values measured at 85°C, VDD(min).
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
19/25
ESMT
F25L04UA
FIGURE 15: SERIAL INPUT TIMING DIAGRAM
FIGURE 16: SERIAL OUTPUT TIMING DIAGRAM
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
20/25
ESMT
F25L04UA
CE#
SCK
SO
SI
HOLD#
FIGURE 17: HOLD TIMING DIAGRAM
FIGURE 18: POWER-UP TIMING DIAGRAM
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
21/25
ESMT
F25L04UA
Input timing reference level
Output timing reference level
0.8VCC
0.7VCC
0.3VCC
0.2VCC
AC
Measurement
Level
0.5VCC
Note : Input pulse rise and fall time are <5ns
FIGURE 19: AC INPUT/OUTPUT REFERENCE WAVEFORMS
FIGURE 20: A TEST LOAD EXAMPLE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
22/25
ESMT
F25L04UA
PACKAGING DIAGRAMS
SOIC ( 150 mil )
5
GAUGE PLANE
0
0.25
E
8
H
8-LEAD
L
DETAIL "X"
1
4
e
b
L1
"X"
A1
A2
A
C
D
SEATING PLANE
Dimension in mm
Dimension in inch
Dimension in mm
Symbol
Dimension in inch
Symbol
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
A
1.35
1.60
1.75
0.053
0.063
0.069
D
4.80
4.90
5.00
0.189
0.193
0.197
A1
0.10
0.15
0.25
0.004
0.006
0.010
E
3.80
3.90
4.00
0.150
0.154
0.157
A2
1.25
1.45
1.55
0.049
0.057
0.061
L
0.40
0.66
0.86
0.016
0.026
0.034
b
0.33
0.406
0.51
0.013
0.016
0.020
e
c
0.19
0.203
0.25
0.0075
0.008
0.010
L1
1.00
1.05
1.10
0.039
0.041
0.043
H
5.80
6.00
6.20
0.228
0.236
0.244
θ
0°
---
8°
0°
---
8°
1.27 BSC
0.050 BSC
Controlling dimension : millimenter
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
23/25
ESMT
F25L04UA
Revision History
Revision
Date
1.0
2006.02.15
1.1
2006.09.05
1.2
2008.01.13
Elite Semiconductor Memory Technology Inc.
Description
Original
1. Erase/Program cycles (min) = 100,000 cycles
2. Delete min.
3. Add Erase/program cycle note 1
4. Modify Note3 from 25°C to 85°C
1. Correct the size of "L" in the packaging diagram of SOIC
150 mil
2. Add operating range table
3. Delete the rating of Temperature Under Bias
4. Add the symbol for erase and byte programming time
5. Correct typo error
6. Modify headline
7. Add Revision History
8. Correct part no.
Publication Date: Jan. 2009
Revision: 1.2
24/25
ESMT
F25L04UA
Important Notice
All rights reserved.
No part of this document may be reproduced or duplicated in any form or
by any means without the prior permission of ESMT.
The contents contained in this document are believed to be accurate at
the time of publication. ESMT assumes no responsibility for any error in
this document, and reserves the right to change the products or
specification in this document without notice.
The information contained herein is presented only as a guide or
examples for the application of our products. No responsibility is
assumed by ESMT for any infringement of patents, copyrights, or other
intellectual property rights of third parties which may result from its use.
No license, either express , implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of ESMT or
others.
Any semiconductor devices may have inherently a certain rate of failure.
To minimize risks associated with customer's application, adequate
design and operating safeguards against injury, damage, or loss from
such failure, should be provided by the customer when making
application designs.
ESMT 's products are not authorized for use in critical applications such
as, but not limited to, life support devices or system, where failure or
abnormal operation may directly affect human lives or cause physical
injury or property damage. If products described here are to be used for
such kinds of application, purchaser must do its own quality assurance
testing appropriate to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2
25/25