ESMT F25L016A

ESMT
F25L016A
Operation Temperature condition -40°C~85°C
16Mbit (2Mx8)
3V Only Serial Flash Memory
„
FEATURES
y
Single supply voltage 2.7~3.6V
y
Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz;100MHz
y
Low power consumption
- typical active current
- 15 μ A typical standby current
y
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y
Program
- Byte program time 9 μ s(typical)
y
Erase
- Chip erase time 10s(typical)
- Block erase time 1sec (typical)
- Sector erase time 90ms(typical)
y
Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Word-Program operations
y
SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
y
End of program or erase detection
y
Write Protect ( WP )
y
Hold Pin ( HOLD )
y
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Part No.
Speed
Package
COMMENTS
F25L016A –50PAIG
50MHz
8 lead SOIC
200mil
Pb-free
F25L016A –100PAIG 100MHz
8 lead SOIC
200mil
Pb-free
GENERAL DESCRIPTION
The F25L016A is a 16Megablt, 3V only CMOS Serial Flash
memory device organized as 2M bytes of 8 bits. This device is
packaged in 8-lead SOIC 200mil. ESMT’s memory devices
reliably store memory data even after 100,000 program and
erase cycles.
The F25L016A features a sector erase architecture. The device
memory array is divided into 512 uniform sectors with 4K byte
each ; 32 uniform blocks with 64K byte each. Sectors can be
Elite Semiconductor Memory Technology Inc.
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
Publication Date: Jul. 2008
Revision: 1.2
1/32
ESMT
F25L016A
Operation Temperature condition -40°C~85°C
PIN CONFIGURATIONS
8-PIN SOIC
CE
1
8
VDD
SO
2
7
HOLD
WP
3
6
SCK
VSS
4
5
SI
PIN Description
Symbol
Pin Name
Functions
SCK
Serial Clock
To provide the timing for serial input and
output operations
SI
Serial Data Input
To transfer commands, addresses or data
serially into the device.
Data is latched on the rising edge of SCK.
SO
Serial Data Output
To transfer data serially out of the device.
Data is shifted out on the falling edge of
SCK.
CE
Chip Enable
To activate the device when CE is low.
WP
Write Protect
The Write Protect ( WP ) pin is used to
enable/disable BPL bit in the status
register.
HOLD
Hold
VDD
Power Supply
VSS
Ground
To temporality stop serial communication
with SPI flash memory without resetting
the device.
To provide power.
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Publication Date: Jul. 2008
Revision: 1.2
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
SECTOR STRUCTURE
Table1 : F25L016A Sector Address Table
Block
31
30
29
28
27
26
25
24
23
22
21
20
Sector
Sector Size
(Kbytes)
Address range
511
4KB
1FF000H – 1FFFFFH
:
:
:
496
4KB
1F0000H – 1F0FFFH
495
4KB
1EF000H – 1EFFFFH
:
:
:
480
4KB
1E0000H – 1E0FFFH
479
4KB
1DF000H – 1DFFFFH
:
:
:
464
4KB
1D0000H – 1D0FFFH
463
4KB
1CF000H – 1CFFFFH
:
:
:
448
4KB
1C0000H – 1C0FFFH
447
4KB
1BF000H – 1BFFFFH
:
:
:
432
4KB
1B0000H – 1B0FFFH
431
4KB
1AF000H – 1AFFFFH
:
:
:
416
4KB
1A0000H – 1A0FFFH
415
4KB
19F000H – 19FFFFH
:
:
:
400
4KB
190000H – 190FFFH
399
4KB
18F000H – 18FFFFH
:
:
:
384
4KB
180000H – 180FFFH
383
4KB
17F000H – 17FFFFH
:
:
:
368
4KB
170000H – 170FFFH
367
4KB
16F000H – 16FFFFH
:
:
:
352
4KB
160000H – 160FFFH
351
4KB
15F000H – 15FFFFH
:
:
:
336
4KB
150000H – 150FFFH
335
4KB
14F000H – 14FFFFH
:
:
:
320
4KB
140000H – 140FFFH
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Block Address
A20
A19
A18
A17
A16
1
1
1
1
1
1
1
1
1
0
1
1
1
0
1
1
1
1
0
0
1
1
0
1
1
1
1
0
1
0
1
1
0
0
1
1
1
0
0
0
1
0
1
1
1
1
0
1
1
0
1
0
1
0
1
1
0
1
0
0
Publication Date: Jul. 2008
Revision: 1.2
3/32
ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Block
19
18
17
16
15
14
13
12
11
10
9
8
Sector
Sector Size
(Kbytes)
Address range
319
4KB
13F000H – 13FFFFH
:
:
:
304
4KB
130000H – 130FFFH
303
4KB
12F000H – 12FFFFH
:
:
:
288
4KB
120000H – 120FFFH
287
4KB
11F000H – 11FFFFH
:
:
:
272
4KB
110000H – 110FFFH
271
4KB
10F000H – 10FFFFH
:
:
:
256
4KB
100000H – 100FFFH
255
4KB
0FF000H – 0FFFFFH
:
:
:
240
4KB
0F0000H – 0F0FFFH
239
4KB
0EF000H – 0EFFFFH
:
:
224
4KB
0E0000H – 0E0FFFH
:
223
4KB
0DF000H – 0DFFFFH
:
:
208
4KB
0D0000H – 0D0FFFH
:
207
4KB
0CF000H – 0CFFFFH
:
:
192
4KB
0C0000H – 0C0FFFH
191
4KB
0BF000H – 0BFFFFH
:
:
176
4KB
0B0000H – 0B0FFFH
175
4KB
0AF000H – 0AFFFFH
:
:
:
:
:
160
4KB
0A0000H – 0A0FFFH
159
4KB
09F000H – 09FFFFH
:
:
:
144
4KB
090000H – 090FFFH
143
4KB
08F000H – 08FFFFH
:
:
:
128
4KB
080000H – 080FFFH
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Block Address
A20
A19
A18
A17
A16
1
0
0
1
1
1
0
0
1
0
1
0
0
0
1
1
0
0
0
0
0
1
1
1
1
0
1
1
1
0
0
1
1
0
1
0
1
1
0
0
0
1
0
1
1
0
1
0
1
0
0
1
0
0
1
0
1
0
0
0
Publication Date: Jul. 2008
Revision: 1.2
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
7
6
5
4
3
2
1
0
127
4KB
07F000H – 07FFFFH
:
:
112
4KB
070000H – 070FFFH
111
4KB
06F000H – 06FFFFH
:
:
:
96
4KB
060000H – 060FFFH
95
4KB
05F000H – 05FFFFH
:
:
:
80
4KB
050000H – 050FFFH
79
4KB
04F000H – 04FFFFH
:
:
:
:
64
4KB
040000H – 040FFFH
63
4KB
03F000H – 03FFFFH
:
:
48
4KB
030000H – 030FFFH
47
4KB
02F000H – 02FFFFH
:
:
:
:
32
4KB
020000H – 020FFFH
31
4KB
01F000H – 01FFFFH
:
:
:
16
4KB
010000H – 010FFFH
15
4KB
00F000H – 00FFFFH
:
:
:
0
4KB
000000H – 000FFFH
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0
0
1
1
1
0
0
1
1
0
0
0
1
0
1
0
0
1
0
0
0
0
0
1
1
0
0
0
1
0
0
0
0
0
1
0
0
0
0
0
Publication Date: Jul. 2008
Revision: 1.2
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Table2 : F25L016A Block Protection Table
Protection Level
Status Register Bit
BP2
BP1
Protected Memory Area
BP0
Block Range
Address Range
0
0
0
0
None
None
Upper 1/32
0
0
1
Block 31
1F0000H – 1FFFFFH
Upper 1/16
0
1
0
Block 30~31
1E0000H – 1FFFFFH
Upper 1/8
0
1
1
Block 28~31
1C0000H – 1FFFFFH
Upper 1/4
1
0
0
Block 24~31
180000H – 1FFFFFH
Upper 1/2
1
0
1
Block 16~31
100000H – 1FFFFFH
All Blocks
1
1
0
Block 0~31
000000H – 1FFFFFH
All Blocks
1
1
1
Block 0~31
000000H – 1FFFFFH
Block Protection (BP2, BP1, BP0)
Block Protection Lock-Down (BPL)
The Block-Protection (BP2, BP1, BP0) bits define the size of the
memory area, as defined in Table2 to be software protected
against any memory Write (Program or Erase) operations. The
Write-Status-Register (WRSR) instruction is used to program the
WP pin driven low (VIL), enables the Block-Protection
-Lock-Down (BPL) bit. When BPL is set to 1, it prevents any
further alteration of the BPL, BP2, BP1, and BP0 bits. When the
BP2, P1, BP0 bits as long as WP is high or the
Block-Protection-Look (BPL) bit is 0. Chip-Erase can only be
executed if Block-Protection bits are all 0. After power-up, BP2,
BP1 and BP0 are set to1.
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WP pin is driven high (VIH), the BPL bit has no effect and its
value is “Don’t Care”. After power-up, the BPL bit is reset to 0.
Publication Date: Jul. 2008
Revision: 1.2
6/32
ESMT
F25L016A
Operation Temperature condition -40°C~85°C
FUNTIONAL BLOCK DIAGRAM
Address
Buffers
and
Latches
Flash
X-Decoder
Y-Decoder
I/O Butters
and
Data Latches
Control Logic
Serial Interface
CE
SCK
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SI
SO
WP
HOLD
Publication Date: Jul. 2008
Revision: 1.2
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Hold Operation
HOLD pin is used to pause a serial sequence underway with the
SPI flash memory without resetting the clocking sequence. To
activate the HOLD mode, CE must be in active low state. The
HOLD mode begins when the SCK active low state coincides
with the falling edge of the HOLD signal. The HOLD mode ends
when the HOLD signal’s rising edge coincides with the SCK
active low state.
If the falling edge of the HOLD signal does not coincide with the
SCK active low state, then the device enters Hold mode when the
SCK next reaches the active low state.
coincide with the SCK active low state, then the device exits in
Hold mode when the SCK next reaches the active low state. See
Figure 1 for Hold Condition waveform.
Once the device enters Hold mode, SO will be in high impedance
state while SI and SCK can be VIL or VIH.
If CE is driven active high during a Hold condition, it resets the
internal logic of the device. As long as HOLD signal is low, the
memory remains in the Hold condition. To resume
communication with the device, HOLD must be driven active
high, and CE must be driven active low. See Figure 15 for Hold
timing.
Similarly, if the rising edge of the HOLD signal does not
S CK
HO L D
A ctive
A ctive
Ho ld
Ho ld
A ctive
Figure 1 : HOLD CONDITION WAVEFORM
Write Protection
F25L016A provides software Write protection.
The Write Protect pin ( WP ) enables or disables the lockdown
function of the status register. The Block-Protection bits (BP1,
BP0, and BPL) in the status register provide Write protection to
the memory array and the status register. See Table 5 for
Block-Protection description.
Write Protect Pin ( WP )
The Write Protect ( WP ) pin enables the lock-down function of
TABLE3: CONDITIONS TO EXECUTE
WRITE-STATUS- REGISTER (WRSR)
INSTRUCTION
WP
BPL
Execute WRSR Instruction
L
1
Not Allowed
L
0
Allowed
H
X
Allowed
the BPL bit (bit 7) in the status register. When WP is driven low,
the execution of the Write-Status-Register (WRSR) instruction is
determined by the value of the BPL bit (see Table 3). When WP
is high, the lock-down function of the BPL bit is disabled.
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Publication Date: Jul. 2008
Revision: 1.2
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Status Register
The software status register provides status on whether the flash
memory array is available for any Read or Write operation,
whether the device is Write enabled, and the state of the memory
Write protection. During an internal Erase or Program operation,
the status register may be read only to determine the completion
of an operation in progress.
Table 4 describes the function of each bit in the software status
register.
TABLE 4: SOFTWARE STATUS REGISTER
Bit
Name
0
BUSY
1
WEL
2
3
4
5
BP0
BP1
BP2
RESERVED
6
AAI
7
BPL
Function
1 = Internal Write operation is in progress
0 = No internal Write operation is in progress
1 = Device is memory Write enabled
0 = Device is not memory Write enabled
Indicate current level of block write protection (See Table 5)
Indicate current level of block write protection (See Table 5)
Indicate current level of block write protection (See Table 5)
Reserved for future use
Auto Address Increment WORD Programming status
1 = AAI programming mode
0 = Byte-Program mode
1 = BP2,BP1,BP0 are read-only bits
0 = BP2,BP1,BP0 are read/writable
Default at
Power-up
Read/Write
0
R
0
R
1
1
1
0
R/W
R/W
R/W
N/A
0
R
0
R/W
Note1 : Only BP0,BP1,BP2 and BPL are writable
Note2 : All register bits are volatility
Note3 : All area are protected at power-on (BP2=BP1=BP0=1)
Busy
The Busy bit determines whether there is an internal Erase or
Program operation in progress. A “1” for the Busy bit indicates
the device is busy with an operation in progress. A “0” indicates
the device is ready for the next valid operation.
Write Enable Latch (WEL)
The Write-Enable-Latch bit indicates the status of the internal
memory Write Enable Latch. If the Write-Enable-Latch bit is set to
“1”, it indicates the device is Write enabled. If the bit is set to “0”
(reset), it indicates the device is not Write enabled and does not
accept any memory Write (Program/ Erase) commands. The
Write-Enable-Latch bit is automatically reset under the following
conditions:
Power-up
Write-Disable (WRDI) instruction completion
Byte-Program instruction completion
Auto Address Increment (AAI) programming is completed
or reached its highest unprotected memory address
• Sector-Erase instruction completion
• Block-Erase instruction completion
• Chip-Erase instruction completion
•
•
•
•
•
Write-Status-Register instructions
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Instructions
low before an instruction is entered and must be driven high after
the last bit of the instruction has been shifted in (except for Read,
Read-ID and Read-Status-Register instructions). Any low to high
Instructions are used to Read, Write (Erase and Program), and
configure the F25L016A. The instruction bus cycles are 8 bits
each for commands (Op Code), data, and addresses. Prior to
executing any Byte-Program, Sector-Erase, Block-Erase, or
Chip-Erase instructions, the Write-Enable (WREN) instruction
must be executed first. The complete list of the instructions is
provided in Table 5. All instructions are synchronized off a high to
transition on CE , before receiving the last bit of an instruction
bus cycle, will terminate the instruction in progress and return the
device to the standby mode.
Instruction commands (Op Code), addresses, and data are all
input from the most significant bit (MSB) first.
low transition of CE . Inputs will be accepted on the rising edge
of SCK starting with the most significant bit. CE must be driven
TABLE 5: DEVICE OPERATION INSTRUCTIONS
Cycle Type/
1,2
Operation
Max
Freq
SIN
6
SOUT
X
-
DOUT
-
-
-
-
A7-A0 Hi-Z DIN
A7-A0 Hi-Z DIN0
Hi-Z
Hi-Z
DIN1
Hi-Z
-
Note7
-
Note7
-
-
-
-
-
-
-
-
-
-
-
-.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Hi-Z
X
14H
-
-
-
-
-
-
-
-
Hi-Z
X
8CH
X
20H
X
15H
-
-
-
-
A7-A0 Hi-Z
X
SIN
A23-A16
A23-A16
A23-A16
A23-A16
SOUT
Hi-Z
Hi-Z
Hi-Z
Hi-Z
SIN
A15-A8
A15-A8
A15-A8
A15-A8
Hi-Z
-
-
-
05H
Hi-Z
X
DOUT
-
Note7
50H
Hi-Z
-
-
-
01H
Hi-Z
Data
Hi-Z
06H
Hi-Z
-
Write-Disable (WRDI)
04H
Hi-Z
Read-Electronic-Signature
(RES)
ABH
Jedec-Read-ID (JEDEC-ID) 10
9FH
33 MHz
5
Byte-Program
(AAI) Single-WORD Program5,6
Read-Status-Register
50MHz
(RDSR)
Enable-Write-Status-Register
8
(EWSR)
Write-Status-Register
(WRSR)8
Write-Enable (WREN) 11
100MHz
Enable SO to output RY/BY#
Status during AAI (EBSY)
Disable SO to output RY/BY#
Status during AAI (DBSY)
Hi-Z A23-A16 Hi-Z A15-A8
Hi-Z A23-A16 Hi-Z A15-A8
90H (A0=0)
Hi-Z A23-A16 Hi-Z A15-A8
90H (A0=1)
Read-ID (RDID)
7.
8.
Bus Cycle
3
4
5
SOUT
SIN SOUT SIN SOUT
Hi-Z
A7-A0 Hi-Z X
DOUT
Hi-Z
A7-A0 Hi-Z X
X
Hi-Z
A7-A0 Hi-Z
Hi-Z
A7-A0 Hi-Z
-
SOUT
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Chip-Erase6
6.
2
SIN
03H
0BH
20H
D8H
60H
C7H
02H
ADH
Read
High-Speed-Read
Sector-Erase4,5 (4K Byte)
Block-Erase (64K Byte)
1.
2.
3.
4.
5.
1
Hi-Z
Hi-Z
Hi-Z
-
-
-
8CH
14H
X
14H
8CH
-
70H
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
80H
Hi-Z
-
-
-
-
-
-
-
-
-
-
Operation: SIN = Serial In, SOUT = Serial Out
X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary)
One bus cycle is eight clock periods.
Sector addresses: use AMS-A12, remaining addresses can be VIL or VIH
Prior to any Byte-Program, Sector-Erase , Block-Erase ,or Chip-Erase operation, the Write-Enable (WREN) instruction must be
executed.
To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by the data to be
programmed.
The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE .
The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction
of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both
instructions effective.
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
9. The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE .
10. The Jedec-Read-ID is output first byte 8CH as manufacture ID; second byte 20H as top memory type; third byte 15H as memory
capacity.
11. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other.
The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both instructions
effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR can reset WREN.
Read (33 MHz)
The Read instruction supports up to 33 MHz, it outputs the data
starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a
(wrap-around) of the address space, i.e. for 16Mbit density, once
the data from address location 1FFFFFH had been read, the next
output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command,
low to high transition on CE . The internal address pointer will
automatically increment until the highest memory address is
reached. Once the highest memory address is reached, the
address pointer will automatically increment to the beginning
03H, followed by address bits [A23-A0]. CE must remain active
low for the duration of the Read cycle. See Figure 2 for the Read
sequence.
CE
MODE3
1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
70
SCK MODE1
03
SI
MSB
SO
ADD.
ADD.
ADD.
MSB
HIGH IMPENANCE
N
N+1
N+2
N+3
N+4
DOUT
DOUT
DOUT
DOUT
D OUT
MSB
Figure 2 : READ SEQUENCE
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Fast-Read (50 MHz ; 100 MHz)
through all addresses until terminated by a low to high transition
The High-Speed-Read instruction supporting up to 100 MHz is
initiated by executing an 8-bit command, 0BH, followed by
on CE . The internal address pointer will automatically increment
until the highest memory address is reached. Once the highest
memory address is reached, the address pointer will
automatically increment to the beginning (wrap-around) of the
address space, i.e. for 16Mbit density, once the data from
address location 1FFFFFH has been read, the next output will be
from address location 000000H.
address bits [A23-A0] and a dummy byte. CE must remain active
low for the duration of the High-Speed-Read cycle. See Figure 3
for the High-Speed-Read sequence.
Following a dummy byte (8 clocks input dummy cycle), the
High-Speed-Read instruction outputs the data starting from the
specified address location. The data output stream is continuous
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
0B
SI
MSB
SO
15 16
ADD.
23 24
ADD.
31 32
ADD.
39 40
47 48
55 56
63 64
71 72
80
X
MSB
HIGH IMPENANCE
N
N+1
N+2
N+3
N+4
DOUT
DOUT
DOUT
DOUT
DOUT
MSB
Note : X = Dummy Byte : 8 Clocks Input Dummy (VIL or VIH)
Figure 3 : HIGH-SPEED-READ SEQUENCE
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Revision: 1.2
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Byte-Program
instruction is initiated by executing an 8-bit command, 02H,
followed by address bits [A23-A0]. Following the address, the data
The Byte-Program instruction programs the bits in the selected
byte to the desired data. The selected byte must be in the erased
state (FFH) when initiating a Program operation. A Byte-Program
instruction applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
is input in order from MSB (bit 7) to LSB (bit 0). CE must be
driven high before the instruction is executed. The user may poll
the Busy bit in the software status register or wait TBP for the
completion of the internal self-timed Byte-Program operation.
See Figure 4 for the Byte-Program sequence.
instruction must be executed. CE must remain active low for
the duration of the Byte-Program instruction. The Byte-Program
CE
MODE3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39
SCK MODE0
02
SI
ADD.
MSB
SO
MSB
ADD.
ADD.
DIN
MSB LSB
HIGH IMPENANCE
Figure 4 : BYTE-PROGRAM SEQUENCE
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Auto Address Increment (AAI) WORD Program
The AAI program instruction allows multiple bytes of data to be programmed without re-issuing the next sequential address location.
This feature decreases total programming time when the multiple bytes or entire memory array is to be programmed. An AAI program
instruction pointing to a protected memory area will be ignored. The selected address range must be in the erased state (FFH) when
initiating an AAI program instruction. While within AAI WORD programming sequence, the only valid instructions are AAI WORD
program operation, RDSR, WRDI. Users have three options to determine the completion of each AAI WORD program cycle: hardware
detection by reading the SO; software detection by polling the BUSY in the software status register or wait TBP. Refer to End-of-Write
Detection section for details.
Prior to any write operation, the Write-Enable (WREN) instruction must be executed. The AAI WORD program instruction is initiated by
executing an 8-bit command, ADH, followed by address bits [A23-A0]. Following the addresses, two bytes of data is input sequentially.
The data is input sequentially from MSB (bit 7) to LSB (bit 0). The first byte of data(DO) will be programmed into the initial address
[A23-A1] with A0 =0; The second byte of data(D1) will be programmed into the initial address [A23-A1] with A0 =1. CE must be driven
high before the AAI WORD program instruction is executed. The user must check the BUSY status before entering the next valid
command. Once the device indicates it is no longer busy, data for next two sequential addresses may be programmed and so on. When
the last desired byte had been entered, check the busy status using the hardware method or the RDSR instruction and execute the
WRDI instruction, to terminate AAI. User must check busy status after WRDI to determine if the device is ready for any command.
Please refer to Figures 7 and Figures 8.
There is no wrap mode during AAI programming; once the highest unprotected memory address is reached, the device will exit AAI
operation and reset the Write-Enable-Latch bit (WEL = 0) and the AAI bit (AAI=0).
End of Write Detection
There are three methods to determine completion of a program cycle during AAI WORD programming: hardware detection by reading
the SO, software detection by polling the BUSY bit in the Software Status Register or wait TBP. The hardware end of write detection
method is described in the section below.
Hardware End of Write Detection
The hardware end of write detection method eliminates the overhead of polling the BUSY bit in the software status register during an AAI
Word PROGRAM OPERATION. The 8bit command, 70H, configures the SO to indicate Flash Busy status during AAI WORD
programming (refer to figure5). The 8bit command, 70H, must be executed prior to executing an AAI WORD program instruction. Once
an internal programming operation begins, asserting CE will immediately drive the status of the internal flash status on the SO pin. A “0”
Indicates the device is busy ; a “1” Indicates the device is ready for the next instruction. De-asserting CE will return the SO pin to
tri-state. The 8bit command, 80H,disables the SO pin to output busy status during AAI WORD program operation and return SO pin to
output software register data during AAI WORD programming (refer to figure6).
FIGURE 5 : ENABLE SO AS HARDWARE RY / BY
DURING AAI PROGRAMMING
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FIGURE 6 : DISABLE SO AS HARDWARE RY / BY
DURING AAI PROGRAMMING
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
FIGURE 7 : AUTO ADDRESS INCREMENT (AAI) WORD-PROGRAM SEQUENCE WITH HARDWARE END-OF-WRITE DETETION
FIGURE 8 : AUTO ADDRESS INCREMENT (AAI) WORD-PROGRAM SEQUENCE WITH SOFTWARE END-OF-WRITE DETETION
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
64K-Byte Block-Erase
The 64K Byte Block-Erase instruction clears all bits in the
selected block to FFH. A Block-Erase instruction applied to a
protected memory area will be ignored. Prior to any Write
operation, the Write-Enable (WREN) instruction must be
executed. CE must remain active low for the duration of the any
command sequence. The Block-Erase instruction is initiated by
executing an 8-bit command, D8H, followed by address bits
[A23-A0]. Address bits [AMS-A16] (AMS = Most Significant address)
are used to determine the block address (BAX), remaining
address bits can be VIL or VIH. CE must be driven high before
the instruction is executed. The user may poll the Busy bit in the
software status register or wait TBE for the completion of the
internal self-timed Block-Erase cycle. See Figure 9 for the
Block-Erase sequence.
FIGURE 9 : 64-KBYTE BLOCK-ERASE SEQUENCE
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
4K-Byte-Sector-Erase
The Sector-Erase instruction clears all bits in the selected sector
to FFH. A Sector-Erase instruction applied to a protected
memory area will be ignored. Prior to any Write operation, the
[AMS-A12] (AMS = Most Significant address) are used to determine
the sector address (SAX), remaining address bits can be VIL or
VIH. CE must be driven high before the instruction is executed.
The user may poll the Busy bit in the software status register or
wait TSE for the completion of the internal self-timed
Sector-Erase cycle. See Figure 10 for the Sector-Erase
sequence.
Write-Enable (WREN) instruction must be executed. CE must
remain active low for the duration of the any command sequence.
The Sector-Erase instruction is initiated by executing an 8-bit
command, 20H, followed by address bits [A23-A0]. Address bits
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7 8
20
SI
A DD.
MSB
SO
15 16
23 24
ADD.
31
A DD.
MSB
HIGH IMPENANCE
FIGURE 10 : SEQUENCE-ERASE SEQUENCE
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Chip-Erase
The Chip-Erase instruction clears all bits in the device to FFH. A
Chip-Erase instruction will be ignored if any of the memory area
is protected. Prior to any Write operation, the Write-Enable
60H or C7H. CE must be driven high before the instruction is
executed. The user may poll the Busy bit in the software status
register or wait TCE for the completion of the internal self-timed
Chip-Erase cycle.
See Figure 11 for the Chip-Erase sequence.
(WREN) instruction must be executed. CE must remain active
low for the duration of the Chip-Erase instruction sequence. The
Chip-Erase instruction is initiated by executing an 8-bit command,
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7
60 or C7
SI
MSB
HIGH IMPENANCE
SO
FIGURE 11 : CHIP-ERASE SEQUENCE
Read-Status-Register (RDSR)
and remain low until the status data is read.
Read-Status-Register is continuous with ongoing clock cycles
The Read-Status-Register (RDSR) instruction allows reading of
the status register. The status register may be read at any time
even during a Write (Program/Erase) operation.
When a Write operation is in progress, the Busy bit may be
checked before sending any new commands to assure that the
new commands are properly received by the device.
until it is terminated by a low to high transition of the CE
See Figure 12 for the RDSR instruction sequence.
CE must be driven low before the RDSR instruction is entered
CE
0
MODE3
1
2
3
4
5
6
7
8
9
Bit7
Bit6
10
11
12
13
14
Bit2
Bit1
SCK MODE1
05
SI
MSB
SO
HIGH IMPENANCE
MSB
Bit5
Bit4
Bit3
Bit0
Status
Register Out
Figure12 : READ-STATUS-REGISTER (RDSR) SEQUENCE
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Write-Enable (WREN)
The Write-Enable (WREN) instruction sets the WriteEnable-Latch bit to 1 allowing Write operations to occur.
The WREN instruction must be executed prior to any Write
(Program/Erase) operation. CE must be driven high before the
WREN instruction is executed.
CE
0 1 2 3 4 5 6 7
MODE3
SCK MODE0
06
SI
MSB
HIGH IMPENANCE
SO
FIGURE 13 : WRITE ENABLE (WREN) SEQUENCE
Write-Disable (WRDI)
The Write-Disable (WRDI) instruction resets the Write-Enable-Latch
bit disabling any new Write operations from occurring.
CE must be driven high before the WRDI instruction is executed.
CE
MODE3
SCK MODE0
0 1 2 3 4 5 6 7
04
SI
MSB
SO
HIGH IMPENANCE
Figure 14 : WRITE DISABLE (WRDI) SEQUENCE
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Enable-Write-Status-Register (EWSR)
The Enable-Write-Status-Register (EWSR) instruction arms the
Write-Status-Register (WRSR) instruction and opens the status
register for alteration. The Enable-Write-Status-Register
instruction does not have any effect and will be wasted, if it is not
followed immediately by the Write-Status-Register (WRSR)
instruction. CE must be driven low before the EWSR instruction
is entered and must be driven high before the EWSR instruction
is executed.
Write-Status-Register (WRSR)
The Write-Status-Register instruction writes new values to the
BP2, BP1, BP0, and BPL bits of the status register. CE must be
driven low before the command sequence of the WRSR
instruction is entered and driven high before the WRSR
instruction is executed. See Figure 15 for EWSR or WREN and
WRSR instruction sequences.
Executing the Write-Status-Register instruction will be ignored
when WP is low and BPL bit is set to “1”. When the WP is
low, the BPL bit can only be set from “0” to “1” to lockdown the
status register, but cannot be reset from “1” to “0”.
When WP is high, the lock-down function of the BPL bit is
disabled and the BPL, BP0, BP1,and BP2 bits in the status
register can all be changed. As long as BPL bit is set to 0 or WP
pin is driven high (VIH) prior to the low-to-high transition of the
CE pin at the end of the WRSR instruction, the bits in the status
register can all be altered by the WRSR instruction. In this case,
a single WRSR instruction can set the BPL bit to “1” to lock down
the status register as well as altering the BP0 ;BP1 and BP2 bits
at the same time. See Table 3 for a summary description of WP
and BPL functions.
CE
MODE3
0 1 2 3 4 5 6 7
0 1 2 3 4 5 6 7 8 9 1011 12 13 1415
SCK MODE0
50 or 06
SI
MSB
SO
01
STATUS
REGISTER IN
7 6 5 4 3 2 1 0
MSB
HIGH IMPENANCE
Figure 15 : ENABLE-WRITE-STATUS-REGISTER (EWSR) or WRITE-ENABLE(WREN) and WRITE-STATUS-REGISTER (WRSR)
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure
to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1.
Output shorted for no more than one second. No more than one output shorted at a time.
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 19 and 20
TABLE 4: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V ; TA=-40°C~85°C
Symbol
Parameter
IDDR
Read Current
IDDW
Program and Erase Current
ISB
Standby Current
ILI
ILO
VIL
VIH
VOL
VOH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Min
Limits
Max
15
Units
mA
40
75
mA
µA
1
1
µA
µA
V
V
V
V
0.7 VDD
0.8
VDD-0.2
0.2
Test Conditions
CE =0.1 VDD/0.9 [email protected] MHz, SO=open
CE =VDD
CE =VDD, VIN=VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
TABLE 5 : RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
TPU-READ1
TPU-WRITE
1.
1
Parameter
Minimum
Units
VDD Min to Read Operation
10
µs
VDD Min to Write Operation
10
µs
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 6: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
COUT
CIN1
1
Description
Output Pin Capacitance
Input Capacitance
Test Condition
Maximum
VOUT = 0V
12 pF
VIN = 0V
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Read-Electronic-Signature (RES)
The RES instruction can be used to read the 8-bit Electronic Signature of the device on the SO pin. The RES instruction can provide
access to the Electronic Signature of the device (except while an Erase, Program or WRSR cycle is in progress), Any ERS instruction
executed while an Erase, Program or WRSR cycle is in progress is no decoded, and has no effect on the cycle in progress.
CE
MODE3
0
1
2
3
4
5
6
7
8
9
Bit7
Bit6
10
11
12
13
14
Bit2
Bit1
SCK MODE1
AB
SI
MSB
SO
HIGH IMPENANCE
MSB
Bit5
Bit4
Bit3
Bit0
Status
Register Out
Figure 16 : Read-Electronic-Signature (RES)
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
JEDEC Read-ID
The JEDEC Read-ID instruction identifies the device as F25L016A and the manufacturer as ESMT. The device information can be read
from executing the 8-bit command,.9FH. Following the JEDEC Read-ID instruction, the 8-bit manufacturer’s ID, 8CH, is output from the
device. After that, a 16-bit device ID is shifted out on the SO pin. Byte1, BFH, identifies the manufacturer as ESMT. Byte2, 20H,
identifies the memory type as SPI Flash. Byte3, 15H, identifies the device as F25L016A. The instruction sequence is shown in Figure16.
The JEDEC Read ID instruction is terminated by a low to high transition on CE at any time during data output. If no other command is
issued after executing the JEDEC Read-ID instruction, issue a 00H (NOP) command before going into Standby Mode ( CE =VIH).
CE
MODE3
SCK MODE0
SI
SO
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
9F
HIGH IMPENANCE
8C
M SB
20
15
MSB
Figure 17 : Jedec-Read-ID Sequence
Table 7 : JEDEC READ-ID DATA
Device ID
Manufacturer’s ID
Memory Type
Memory Capacity
Byte1
Byte 2
Byte 3
8CH
20H
15H
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Read-ID (RDID)
The Read-ID instruction (RDID) identifies the devices as F25L016A and manufacturer as ESMT. This command is backward compatible
to all ESMT SPI devices and should be used as default device identification when multiple versions of ESMT SPI devices are used in
one design. The device information can be read from executing an 8-bit command, 90H or ABH, followed by address bits [A23-A0].
Following the Read-ID instruction, the manufacturer’s ID is located in address 00000H and the device ID is located in address 00001H.
Once the device is in Read-ID mode, the manufacturer’s and device ID output data toggles between address 00000H and 00001H until
terminated by a low to high transition on CE .
Figure 18 : Read-Electronic-Signature
Table 8 : JEDEC READ-ID DATA
Address
Byte1
Byte2
Manufacturer’s ID
00000H
8CH
14H
ESMT
F25L016A
00001H
14H
8CH
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
TABLE 9: RELIABILITY CHARACTERISTICS
Symbol
1.
Parameter
NEND1
Endurance
TDR1
Data Retention
ILTH1
Latch Up
Minimum Specification
Units
Test Method
100,000
Cycles
JEDEC Standard A117
10
Years
JEDEC Standard A103
100 + IDD
mA
JEDEC Standard 78
This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10 : AC OPERATING CHARACTERISTICS
TA=-40°C~85°C
Normal 33MHz Fast 50 MHz
Fast 75 MHz Fast 100 MHz
VDD=2.7~3.6V VDD=2.7~3.6V VDD=2.7~3.6V VDD=3.0~3.6V
Symbol
Parameter
Min
Max
Min
Min
Min
Units
100
MHz
TSCKH
Serial Clock High Time
13
9
6
5
ns
TSCKL
Serial Clock Low Time
13
9
6
5
ns
CE Active Setup Time
5
5
5
5
ns
TCEH1
CE Active Hold Time
5
5
5
5
ns
TCHS1
CE Not Active Setup Time
5
5
5
5
ns
TCHH1
CE Not Active Hold Time
5
5
5
5
ns
TCPH
CE High Time
100
100
100
100
ns
TCHZ
CE High to High-Z Output
TCLZ
SCK Low to Low-Z Output
0
0
0
0
ns
TDS
Data In Setup Time
3
3
3
3
ns
TDH
Data In Hold Time
3
3
3
3
ns
THLS
HOLD Low Setup Time
5
5
5
5
ns
THHS
HOLD High Setup Time
5
5
5
5
ns
THLH
HOLD Low Hold Time
5
5
5
5
ns
THHH
HOLD High Hold Time
5
5
5
5
ns
THZ
HOLD Low to High-Z Output
9
9
9
9
ns
TLZ
HOLD High to Low-Z Output
9
9
9
9
ns
TOH
Output Hold from SCK Change
TV
Output Valid from SCK
9
0
9
0
12
75
Max
Serial Clock Frequency
TCES
50
Max
FCLK
1
33
Max
9
0
8
9
0
7.5
ns
ns
7
ns
1. Relative to SCK.
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
ERASE AND PROGRAMMING PERFORMANCE
Limits
Parameter
Unit
Typ.(2)
Max.(3)
Sector Erase Time
90
200
ms
Block Erase Time
1
2
s
Chip Erase Time
10
30
s
Byte Programming Time
9
300
us
Chip Programming Time
50
100
s
100,000
-
Cycles
20
-
Years
Erase/Program Cycles (1)
Data Retention
Notes:
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3V.
3.Maximum values measured at 85°C, 2.7V.
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
FIGURE 19: SERIAL INPUT TIMING DIAGRAM
FIGURE 20: SERIAL OUTPUT TIMING DIAGRAM
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
FIGURE 21: HOLD TIMING DIAGRAM
FIGURE 22: POWER-UP TIMING DIAGRAM
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Input timing reference level
Output timing reference level
0.8VCC
0.7VCC
0.3VCC
0.2VCC
AC
Measurement
Level
0.5VCC
Note : Input pulse rise and fall time are <5ns
FIGURE 23 : AC INPUT/OUTPUT REFERENCE WAVEFORMS
FIGURE 24: A TEST LOAD EXAMPLE
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ESMT
F25L016A
Operation Temperature condition -40°C~85°C
PACKING
8-LEAD
DIMENSIONS
SOP ( 200 mil )
5
1
4
E1
8
E
θ
b
e
A
A2
D
L
A1
L1
SEATING PLANE
Dimension in mm
Dimension in inch
DETAIL "X"
Dimension in mm
Symbol
Dimension in inch
Symbol
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
Min
Norm
Max
A
---
---
2.16
---
---
0.085
E
7.70
7.90
8.10
0.303
0.311
0.319
A1
0.05
0.15
0.25
0.002
0.006
0.010
E1
5.18
5.28
5.38
0.204
0.208
0.212
A2
1.70
1.80
1.91
0.067
0.071
0.075
L
0.50
0.65
0.80
0.020
0.026
0.032
b
0.36
0.41
0.51
0.014
0.016
0.020
e
c
0.19
0.20
0.25
0.007
0.008
0.010
L1
1.27
1.37
1.47
0.050
0.054
0.058
D
5.13
5.23
5.33
0.202
0.206
0.210
θ
0°
---
8°
0°
---
8°
1.27 BSC
0.050 BSC
Controlling dimension : millimenter
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.2
30/32
ESMT
F25L016A
Operation Temperature condition -40°C~85°C
Revision History
Revision
Date
1.0
2007.04.04
1.1
2007.10.01
1.2
2008.07.17
Elite Semiconductor Memory Technology Inc.
Description
Original
1. Modify part No. for I grade.
2. Delete bottom block protection table.
1. Add “All Pb-free products are RoHS-Compliant” in the
description of features
2. Modify tSE timing
3. Add Revision History
Publication Date: Jul. 2008
Revision: 1.2
31/32
ESMT
F25L016A
Operation Temperature condition -40°C~85°C
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The contents contained in this document are believed to be accurate at
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specification in this document without notice.
The information contained herein is presented only as a guide or
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No license, either express , implied or otherwise, is granted under any
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others.
Any semiconductor devices may have inherently a certain rate of failure.
To minimize risks associated with customer's application, adequate
design and operating safeguards against injury, damage, or loss from
such failure, should be provided by the customer when making
application designs.
ESMT 's products are not authorized for use in critical applications such
as, but not limited to, life support devices or system, where failure or
abnormal operation may directly affect human lives or cause physical
injury or property damage. If products described here are to be used for
such kinds of application, purchaser must do its own quality assurance
testing appropriate to such applications.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.2
32/32