ETRON EM6AA160TSA-5G

EtronTech
EM6AA160TSA
16M x 16 bit DDR Synchronous DRAM (SDRAM)
Etron Confidential
Features
•
•
•
•
•
•
•
•
Fast clock rate: 250/200MHz
Differential Clock CK & CK
Bi-directional DQS
DLL enable/disable by EMRS
Fully synchronous operation
Internal pipeline architecture
Four internal banks, 4M x 16-bit for each bank
Programmable Mode and Extended Mode registers
- CAS Latency: 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
Individual
byte write mask control
•
• DM Write Latency = 0
• Auto Refresh and Self Refresh
• 8192 refresh cycles / 64ms
• Precharge & active power down
• Power supplies: VDD & VDDQ = 2.5V ± 5%
• Interface: SSTL_2 I/O Interface
• Package: 66 Pin TSOP II, 0.65mm pin pitch
- Pb free and Halogen free
Overview
The EM6AA160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256 Mbits.
It is internally configured as a quad 4M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs occur
at both rising edges of CK and CK .d Read and write
accesses to the SDRAM are burst oriented; accesses start
at a selected location and continue for a programmed
number of locations in a programmed sequence. Accesses
begin with the registration of a BankActivate command
which is then followed by a Read or Write command. The
EM6AA160 provides programmable Read or Write burst
lengths of 2, 4, or 8. An auto precharge function may be
enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. The refresh
functions, either Auto or Self Refresh are easy to use. In
addition, EM6AA160 features programmable DLL option.
By having a programmable mode register and extended
mode register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to high
performance main memory and graphics applications.
Preliminary (Rev. 1.2 May. / 2009)
Table 1.Ordering Information
Clock
Data Rate Package
Frequency
EM6AA160TSA-4G 250MHz 500Mbps/pin TSOPII
EM6AA160TSA-5G 200MHz 400Mbps/pin TSOPII
Part Number
TS: indicates TSOP II package
G: indicates Pb free and Halogen free
A: indicates Generation Code
Figure 1. Pin Assignment (Top View)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
EtronTech
EM6AA160TSA
Figure 2. Block Diagram
CK
CK
DLL
CLOCK
BUFFER
COMMAND
DECODER
A10/AP
COLUMN
COUNTER
A0
CONTROL
SIGNAL
GENERATOR
MODE
REGISTER
4M x 16
CELL ARRAY
(BANK #0)
Column Decoder
Row
Decoder
CS
RAS
CAS
WE
Row
Decoder
CKE
4M x 16
CELL ARRAY
(BANK #1)
Column Decoder
A9
A11
A12
BA0
BA1
Row
Decoder
~
ADDRESS
BUFFER
REFRESH
COUNTER
DATA
STROBE
BUFFER
LDQS
UDQS
DQ0
4M x 16
CELL ARRAY
(BANK #2)
Column Decoder
DQ
Buffer
Row
Decoder
~
DQ15
LDM
UDM
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2
4M x 16
CELL ARRAY
(BANK #3)
Column Decoder
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Pin Descriptions
Table 2. Pin Details of EM6AA160
Symbol
Type
Description
CK, CK
Input
Differential Clock: CK, CK are driven by the system clock. All SDRAM input signals
are sampled on the positive edge of CK. Both CK and CK increment the internal
burst counter and controls the output registers.
CKE
Input
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. If CKE
goes low synchronously with clock, the internal clock is suspended from the next
clock cycle and the state of output and burst address is frozen as long as the CKE
remains low. When all banks are in the idle state, deactivating the clock controls the
entry to the Power Down and Self Refresh modes.
BA0, BA1
Input
Bank Activate: BA0 and BA1 define to which bank the BankActivate, Read, Write, or
BankPrecharge command is being applied.
A0-A12
Input
Address Inputs: A0-A12 are sampled during the BankActivate command (row
address A0-A12) and Read/Write command (column address A0-A8 with A10 defining
Auto Precharge).
CS
Input
Chip Select: CS enables (sampled LOW) and disables (sampled HIGH) the
command decoder. All commands are masked when CS is sampled HIGH. CS
provides for external bank selection on systems with multiple banks. It is considered
part of the command code.
RAS
Input
Row Address Strobe: The RAS signal defines the operation commands in
conjunction with the CAS and WE signals and is latched at the positive edges of
CK. When RAS and CS are asserted "LOW" and CAS is asserted "HIGH," either
the BankActivate command or the Precharge command is selected by the WE
signal. When the WE is asserted "HIGH," the BankActivate command is selected
and the bank designated by BA is turned on to the active state. When the WE is
asserted "LOW," the Precharge command is selected and the bank designated by BA
is switched to the idle state after the precharge operation.
CAS
Input
Column Address Strobe: The CAS signal defines the operation commands in
conjunction with the RAS and WE signals and is latched at the positive edges of
CK. When RAS is held "HIGH" and CS is asserted "LOW," the column access is
started by asserting CAS "LOW." Then, the Read or Write command is selected by
asserting WE "HIGH" or “LOW”.
WE
Input
Write Enable: The WE signal defines the operation commands in conjunction with
the RAS and CAS signals and is latched at the positive edges of CK. The WE input
is used to select the BankActivate or Precharge command and Read or Write
command.
LDQS,
Input /
UDQS
Output
Bidirectional Data Strobe: Specifies timing for Input and Output data. Read Data
Strobe is edge triggered. Write Data Strobe provides a setup and hold time for data
and DQM. LDQS is for DQ0~7, UDQS is for DQ8~15.
LDM,
Input
Data Input Mask: Input data is masked when DM is sampled HIGH during a write
cycle. LDM masks DQ0-DQ7, UDM masks DQ8-DQ15.
Input /
Output
Data I/O: The DQ0-DQ15 input and output data are synchronized with the positive
edges of CK and CK The I/Os are byte-maskable during Writes.
UDM
DQ0 - DQ15
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EtronTech
EM6AA160TSA
VDD
Supply
Power Supply: 2.5V ± 5% .
VSS
Supply
Ground
VDDQ
Supply
DQ Power: 2.5V ± 5%. Provide isolated power to DQs for improved noise immunity.
VSSQ
Supply
DQ Ground: Provide isolated ground to DQs for improved noise immunity.
VREF
Supply
Reference Voltage for Inputs: +0.5*VDDQ
NC
-
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No Connect: These pins should be left unconnected.
4
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Operation Mode
Fully synchronous operations are performed to latch the commands at the positive edges of CK. Table 3
shows the truth table for the operation commands.
Table 3. Truth Table (Note (1), (2))
Command
State
CKEn-1 CKEn UDM LDM BA0,1 A10
Idle(3)
H
X
X
X
V
BankPrecharge
Any
H
X
X
X
V
L
PrechargeAll
Any
H
X
X
X
X
H
Write
Active(3)
H
X
X
X
V
L
Write and AutoPrecharge
Active(3)
H
X
X
X
V
H
Read
Active(3)
H
X
X
X
V
L
Read and Autoprecharge
Active(3)
H
X
X
X
V
H
Mode Register Set
Idle
H
X
X
X
Extended MRS
Idle
H
X
X
X
No-Operation
Any
H
X
X
X
X
X
Active(4)
H
X
X
X
X
Device Deselect
Any
H
X
X
X
AutoRefresh
Idle
H
H
X
SelfRefresh Entry
Idle
H
L
Idle
L
H
BankActivate
Burst Stop
SelfRefresh Exit
A0-9, 11-12
Row address
L
L
H
H
X
L
L
H
L
X
L
L
H
L
L
H
L
L
L
H
L
L
L
H
L
H
L
H
L
H
OP code
L
L
L
L
OP code
L
L
L
L
X
L
H
H
H
X
X
L
H
H
L
X
X
X
H
X
X
X
X
X
X
X
L
L
L
H
X
X
X
X
X
L
L
L
H
X
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
H
X
X
X
L
H
H
H
X
X
X
X
X
X
X
X
Column address
(A0 ~ A8)
Column address
(A0 ~ A8)
(SelfRefresh)
Precharge Power Down Mode
Entry
Precharge Power Down Mode
Exit
Active Power Down Mode
Entry
Active Power Down Mode
Exit
Data Input Mask Disable
Idle
Any
H
L
L
H
X
X
X
X
X
X
X
X
X
X
(PowerDown)
Active
Any
H
L
L
H
X
X
X
X
X
X
X
X
X
X
(PowerDown)
Active
H
X
L
L
X
X
X
Data Input Mask Enable(5)
Active
H
X
H
H
X
X
X
Note: 1. V=Valid data, X=Don't Care, L=Low level, H=High level
2. CKEn signal is input level when commands are provided.
CKEn-1 signal is input level one clock cycle before the commands are provided.
3. These are states of bank designated by BA signal.
4. Device state is 2, 4, and 8 burst operation.
5. LDM and UDM can be enabled respectively.
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CS RAS CAS WE
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Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Mode Register Set (MRS)
The Mode Register stores the data for controlling various operating modes of a DDR SDRAM. It programs
CAS Latency, Burst Type, and Burst Length to make the DDR SDRAM useful for a variety of applications. The
default value of the Mode Register is not defined; therefore the Mode Register must be written by the user.
Values stored in the register will be retained until the register is reprogrammed. The Mode Register is written by
asserting Low on CS , RAS , CAS , WE , BA1 and BA0 (the device should have all banks idle with no bursts in
progress prior to writing into the mode register, and CKE should be High). The state of address pins A0~A12
and BA0, BA1 in the same cycle in which CS , RAS , CAS and WE are asserted Low is written into the Mode
Register. A minimum of two clock cycles, tMRD, are required to complete the write operation in the Mode
Register. The Mode Register is divided into various fields depending on functionality. The Burst Length uses
A0~A2, Burst Type uses A3, and CAS Latency (read latency from column address) uses A4~A6. A logic 0
should be programmed to all the undefined addresses to ensure future compatibility. Reserved states should
not be used to avoid unknown device operation or incompatibility with future versions. Refer to the table for
specific codes for various burst lengths, burst types and CAS latencies.
Table 4. Mode Register Bitmap
BA1 BA0 A12 A11 A10
0
A8
0
1
X
0
A9
RFU must be set to “0”
A7 Test Mode
0 Normal mode
0
DLL Reset
1
Test mode
BA0 Mode
0
MRS
1
EMRS
A6
0
0
0
0
1
1
1
1
A5
0
0
1
1
0
0
1
1
A8
A7
A6
T.M.
A5
A4
CAS Latency
A4 CAS Latency
0
Reserved
1
Reserved
0
Reserved
1
3
0
Reserved
1
Reserved
0
2.5
1
Reserved
A3 Burst Type
0 Sequential
1 Interleave
A3
BT
A2
0
0
0
0
1
1
1
1
A2
A1
A0
Burst Length
A1
0
0
1
1
0
0
1
1
Address Field
Mode Register
A0 Burst Length
0
Reserved
1
2
0
4
1
8
0
Reserved
1
Reserved
0
Reserved
1
Reserved
• Burst Length Field (A2~A0)
This field specifies the data length of column access using the A2~A0 pins and selects the Burst Length to be
2, 4, 8.
Table 5. Burst Length
A2
A1
A0
Burst Length
0
0
0
Reserved
0
0
1
2
0
1
0
4
0
1
1
8
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
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EtronTech
EM6AA160TSA
• Addressing Mode Select Field (A3)
The Addressing Mode can be one of two modes, either Interleave Mode or Sequential Mode. Both Sequential
Mode and Interleave Mode support burst length of 2, 4 and 8.
Table 6. Addressing Mode
A3
Addressing Mode
0
Sequential
1
Interleave
• Burst Definition, Addressing Sequence of Sequential and Interleave Mode
Table 7. Burst Address ordering
Burst Length
2
4
8
A2
X
X
X
X
X
X
0
0
0
0
1
1
1
1
Start Address
A1
X
X
0
0
1
1
0
0
1
1
0
0
1
1
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Sequential
Interleave
0, 1
1, 0
0, 1, 2, 3
1, 2, 3, 0
2, 3, 0, 1
3, 0, 1, 2
0, 1, 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7, 0
2, 3, 4, 5, 6, 7, 0, 1
3, 4, 5, 6, 7, 0, 1, 2
4, 5, 6, 7, 0, 1, 2, 3
5, 6, 7, 0, 1, 2, 3, 4
6, 7, 0, 1, 2, 3, 4, 5
7, 0, 1, 2, 3, 4, 5, 6
0, 1
1, 0
0, 1, 2, 3
1, 0, 3, 2
2, 3, 0, 1
3, 2, 1, 0
0, 1, 2, 3, 4, 5, 6, 7
1, 0, 3, 2, 5, 4, 7, 6
2, 3, 0, 1, 6, 7, 4, 5
3, 2, 1, 0, 7, 6, 5, 4
4, 5, 6, 7, 0, 1, 2, 3
5, 4, 7, 6, 1, 0, 3, 2
6, 7, 4, 5, 2, 3, 0, 1
7, 6, 5, 4, 3, 2, 1, 0
• CAS Latency Field (A6~A4)
This field specifies the number of clock cycles from the assertion of the Read command to the first read data.
The minimum whole value of CAS Latency depends on the frequency of CK. The minimum whole value
satisfying the following formula must be programmed into this field.
tCAC(min) ≤ CAS Latency X tCK
Table 8. CAS Latency
A6
A5
A4
CAS Latency
0
0
0
Reserved
0
0
1
Reserved
0
1
0
Reserved
0
1
1
3 clocks
1
0
0
Reserved
1
0
1
Reserved
1
1
0
2.5 clocks
1
1
1
Reserved
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Rev. 1.2
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EtronTech
EM6AA160TSA
• Test Mode field (A8~A7)
These two bits are used to enter the test mode and must be programmed to "00" in normal operation.
Table 9. Test Mode
A8
A7
Test Mode
0
0
Normal mode
1
0
DLL Reset
• (BA0, BA1)
Table 10. MRS/EMRS
BA1
BA0
A12 ~ A0
RFU
0
MRS Cycle
RFU
1
Extended Functions (EMRS)
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EtronTech
EM6AA160TSA
Extended Mode Register Set (EMRS)
The Extended Mode Register Set stores the data for enabling or disabling DLL and selecting output driver
strength. The default value of the extended mode register is not defined, therefore must be written after power
up for proper operation. The extended mode register is written by asserting low on CS , RAS , CAS , and WE .
The state of A0 ~ A12, BA0 and BA1 is written in the mode register in the same cycle as CS , RAS , CAS , and
WE going low. (the device should have all banks idle with no bursts in progress prior to writing into the mode
register, and CKE should be High). A1 is used for setting driver strength to normal, or weak. Two clock cycles
are required to complete the write operation in the extended mode register. The mode register contents can be
changed using the same command and clock cycle requirements during operation as long as all banks are in
the idle state. A0 is used for DLL enable or disable. "High" on BA0 is used for EMRS. Refer to the table for
specific codes.
Table 11. Extended Mode Register Bitmap
BA1 BA0 A12 A11 A10
0
BA0
0
1
1
Mode
MRS
EMRS
Etron Confidential
A9
A8
A7
A6
A5
RFU must be set to “0”
A1
0
1
Drive Strength
Normal
Weak
A4
A3
A2
A1
A0
DS0 DLL Extend Mode Register
A0
0
1
9
Address Field
Rev. 1.2
DLL
Enable
Disable
May 2009
EtronTech
EM6AA160TSA
Table 12. Absolute Maximum Rating
Symbol
Item
Rating
Unit
VIN, VOUT
Input, Output Voltage
- 0.5~ VDDQ + 0.5
V
VDD, VDDQ
Power Supply Voltage
- 1~3.6
V
TA
Ambient Temperature
0~70
°C
TSTG
Storage Temperature
- 65~150
°C
TSOLDER
Soldering Temperature
260
°C
PD
Power Dissipation
1
W
IOUT
Short Circuit Output Current
50
mA
Note1: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device.
Note2: These voltages are relative to Vss
Table 13. Recommended D.C. Operating Conditions (TA = 0 ~ 70 °C)
Parameter
Symbol
Min.
Max.
Unit
Power Supply Voltage
VDD
2.375
2.625
V
Power Supply Voltage (for I/O Buffer)
VDDQ
2.375
2.625
V
Input Reference Voltage
VREF
0.49*VDDQ
0.51* VDDQ
V
Input High Voltage (DC)
VIH (DC) VREF + 0.15 VDDQ + 0.3
V
Input Low Voltage (DC)
VIL (DC)
VREF – 0.15
V
VREF - 0.04 VREF + 0.04
V
Termination Voltage
VTT
-0.3
Note
Input Voltage Level, CK and CK inputs
VIN (DC)
-0.3
VDDQ + 0.3
V
Input Different Voltage, CK and CK inputs
VID (DC)
-0.36
VDDQ + 0.6
V
II
-2
2
µA
Output leakage current
IOZ
-5
5
µA
Output High Voltage
VOH
VTT + 0.76
-
V
IOH = -15.2 mA
Output Low Voltage
Note: All voltages are referenced to VSS.
VOL
-
VTT – 0.76
V
IOL = +15.2 mA
Input leakage current
Table 14. Capacitance (VDD = 2.5V, f = 1MHz, TA = 25 °C)
Symbol
Parameter
Min.
Max.
Unit
3.5
pF
3.5
pF
CIN1
Input Capacitance (CK, CK )
2.5
CIN2
Input Capacitance (All other input-only pins)
2.5
CI/O
DQ, DQS, DM Input/Output Capacitance
4.0
5.0
pF
Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested
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EtronTech
EM6AA160TSA
Table 15. D.C. Characteristics (VDD = 2.5V ± 5%, TA = 0~70 °C)
Parameter & Test Condition
Symbol
OPERATING CURRENT: One bank; Active-Precharge;
tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs
changing once per clock cycle; Address and control inputs
changing once every two clock cycles.
OPERATING CURRENT : One bank; Active-ReadPrecharge; BL=4; tRC=tRC(min); tCK=tCK(min); lout=0mA;
Address and control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All
banks idle; power-down mode; tCK=tCK(min); CKE=LOW
IDLE STANDLY CURRENT : CKE = HIGH;
CS =HIGH(DESELECT); All banks idle; tCK=tCK(min);
Address and control inputs changing once per clock cycle;
VIN=VREF for DQ, DQS and DM
ACTIVE POWER-DOWN STANDBY CURRENT : one bank
active; power-down mode; CKE=LOW; tCK=tCK(min)
ACTIVE STANDBY CURRENT : CS =HIGH;CKE=HIGH; one
bank active ; tRC=tRC(max);tCK=tCK(min);Address and control
inputs changing once per clock cycle; DQ,DQS,and DM
inputs changing twice per clock cycle
OPERATING CURRENT BURST READ : BL=2; READS;
Continuous burst; one bank active; Address and control
inputs changing once per clock cycle; tCK=tCK(min);
lout=0mA;50% of data changing on every transfer
OPERATING CURRENT BURST Write : BL=2; WRITES;
Continuous Burst ;one bank active; address and control
inputs changing once per clock cycle; tCK=tCK(min);
DQ,DQS,and DM changing twice per clock cycle; 50% of
data changing on every transfer
AUTO REFRESH CURRENT : tRC=tRFC(min); tCK=tCK(min)
SELF REFRESH CURRENT: Sell Refresh Mode ; CKE≦
0.2V;tCK=tCK(min)
BURST OPERATING CURRENT 4 bank operation:
Four bank interleaving READs; BL=4;with Auto Precharge;
tRC=tRC(min); tCK=tCK(min); Address and control inputschang
only during Active, READ , or WRITE command
Etron Confidential
11
-4
-5
Max.
Unit Note
IDD0
150
115
mA
IDD1
175
135
mA
IDD2P
40
40
mA
IDD2N
70
70
mA
IDD3P
60
45
mA
IDD3N
135
105
mA
IDD4R
245
190
mA
IDD4W
245
190
mA
IDD5
200
155
mA
IDD6
6
6
mA
IDD7
300
235
mA
Rev. 1.2
1
May 2009
EtronTech
EM6AA160TSA
Table 16. Electrical Characteristics and Recommended A.C.Operating Condition
(VDD = 2.5V ± 5%, TA = 0~70 °C)
Symbol
-4
Parameter
CL = 2.5
CL = 3
-5
Min.
4
0.45
0.45
tCLMIN or
tCHMIN
Max.
10
0.55
0.55
Unit Note
Min.
6
5
0.45
0.45
tCLMIN or
tCHMIN
Max.
12
10
0.55
0.55
-
ns
2
ns
ns
tCK
tCK
tCK
Clock cycle time
tCH
tCL
Clock high level width
Clock low level width
tHP
Clock half period
tHZ
Data-out-high impedance time from CK, CK
-0.7
0.7
-0.7
0.7
ns
3
tLZ
Data-out-low impedance time from CK, CK
-0.7
0.7
-0.7
0.7
ns
3
tDQSCK
DQS-out access time from CK, CK
-0.7
0.7
-0.7
0.7
ns
tAC
Output access time from CK, CK
-0.7
0.7
-0.7
0.7
ns
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPRE
tWPST
tDQSH
tDQSL
tIS
tIH
tDS
tDH
tQH
tRC
tRFC
tRAS
DQS-DQ Skew
Read preamble
Read postamble
CK to valid DQS-in
DQS-in setup time
DQS write preamble
DQS write postamble
DQS in high level pulse width
DQS in low level pulse width
Address and Control input setup time
Address and Control input hold time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
DQ/DQS output hold time from DQS
Row cycle time
Refresh row cycle time
Row active time
0.9
0.4
0.8
0
0.35
0.4
0.35
0.35
0.9
0.9
0.45
0.45
tHP -0.5
60
72
40
0.4
1.1
0.6
1.2
0.6
120K
0.9
0.4
0.8
0
0.35
0.4
0.35
0.35
1.0
1.0
0.45
0.45
tHP -0.55
60
72
40
0.45
1.1
0.6
1.2
0.6
120K
ns
tCK
tCK
tCK
ns
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
tRCD
RAS to CAS Delay
Row precharge time
Row active to Row active delay
Write recovery time
Internal Write to Read Command Delay
Mode register set cycle time
Average Periodic Refresh interval
Self refresh exit to read command delay
Self refresh exit to non-read command delay
Auto Precharge write recovery + precharge time
DQ and DM input puls width
Cntrol and Address input pulse width
20
-
20
-
ns
20
8
12
2
8
200
75
36
1.75
2.2
7.8
-
20
10
15
2
10
200
75
35
1.75
2.2
7.8
-
ns
ns
ns
tCK
ns
µs
tCK
ns
ns
ns
ns
tRP
tRRD
tWR
tWTR
tMRD
tREFI
tXSRD
tXSNR
tDAL
tDIPW
tIPW
Etron Confidential
12
-
Rev. 1.2
4
5
6
6
7
May 2009
EtronTech
EM6AA160TSA
Table 17. Recommended A.C. Operating Conditions (VDD = 2.5V ± 5%, TA = 0~70 °C)
Parameter
Symbol
Min.
Max.
Unit
Input High Voltage (AC)
VIH (AC)
VREF + 0.35
-
V
Input Low Voltage (AC)
VIL (AC)
-
VREF – 0.35
V
Input Different Voltage, CK and CK inputs
VID (AC)
0.7
VDDQ + 0.6
V
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
Input Crossing Point Voltage, CK and CK inputs VIX (AC)
Note:
1) Enables on-chip refresh and address counters.
2) Min(tCL, tCH) refers to ther smaller of the actual clock low time and actual clock high time as provided to the
device.
3) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters
are not referenced to a specific voltage level, but specify when the device output is no longer driving(HZ), or
begins driving(LZ).
4) The specific requirement is that DQS be valid (High, Low, or at some point on a valid transition) on or
before this CK edge. A valid transition is defined as monotonic, and meeting the input slew rate
specifications of the device. When no writes were previously in progress on the bus, DQS will be
transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or
transitioning from HIGH to LOW at this time, depending on tDQSS.
5) The maximum limit for this parameter is not a device limit. The device will operate with a greater value for
this parameter, but system performance (bus turnaround) will degrade accordingly.
6) For command/address and CK & CK slew rate ≧ 1.0V/ns.
7) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
8)
Power-up sequence is described in Note 10
9) A.C. Test Conditions
Etron Confidential
13
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Table 18. SSTL _2 Interface
Reference Level of Output Signals (VREF)
0.5 * VDDQ
Output Load
Reference to the Test Load
Input Signal Levels
VREF+0.35 V / VREF-0.35 V
Input Signals Slew Rate
1 V/ns
Reference Level of Input Signals
0.5 * VDDQ
Figure 3. SSTL_2 A.C. Test Load
0.5 x VDDQ
50Ω
DQ, DQS
Z0=50Ω
30pF
10) Power up Sequence
Power up must be performed in the following sequence.
1) Apply power to VDD before or at the same time as VDDQ, VTT and VREF when all input signals are held
"NOP" state and maintain CKE “LOW”.
2) Start clock and maintain stable condition for minimum 200µs.
3) Issue a “NOP” command and keep CKE “HIGH”
4) Issue a “Precharge All” command.
5) Issue EMRS – enable DLL.
6) Issue MRS – reset DLL. (An additional 200 clock cycles are required to lock the DLL).
7) Precharge all banks of the device.
8) Issue two or more Auto Refresh commands.
9) Issue MRS – with A8 to low to initialize the mode register.
Etron Confidential
14
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Timing Waveforms
Figure 4. Activating a Specific Row in a Specific Bank
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
Address
RA
BA0,1
BA
RA=Row Address
BA=Bank Address
Don’t Care
Etron Confidential
15
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 5. tRCD and tRRD Definition
CK
CK
RD/W
R
COMMAND
ACT
Address
Row
Row
Col
BA0,BA1
Bank A
Bank B
Bank B
NOP
NOP
ACT
tRRD
NOP
NOP
NOP
tRCD
Don’t Care
Figure 6. READ Command
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
A0 - A8
CA
EN AP
A10
DIS AP
BA0,1
BA
CA=Column Address
BA=Bank Address
EN AP=Enable Autoprecharge
DIS AP=Disable Autoprecharge
Don’t Care
Etron Confidential
16
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 7. Read Burst Required CAS Latencies (CL=2.5)
CK
CK
COMMAND
READ
ADDRESS
Bank A,
Col n
NOP
NOP
NOP
NOP
NOP
CL=2.5
DQS
DO
n
DQ
DO n=Data Out from column n
Burst Length=4
3 subsequent elements of Data Out appear in the programmed order following DO n
Don’t Care
Read Burst Required CAS Latencies (CL=3)
CK
CK
COMMAND
READ
ADDRESS
Bank A,
Col n
NOP
NOP
NOP
NOP
NOP
CL=3
DQS
DO
n
DQ
DO n=Data Out from column n
Burst Length=4
3 subsequent elements of Data Out appear in the programmed order
following DO n
Don’t Care
Etron Confidential
17
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 8. Consecutive Read Bursts Required CAS Latencies (CL=2.5)
CK
CK
COMMAND
READ
NOP
NOP
NOP
NOP
Bank,
Col o
Bank,
Col n
ADDRESS
READ
CL=2.5
DQS
DO
n
DQ
DO
o
DO n (or o)=Data Out from column n (or column o)
Burst Length=4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first)
3 subsequent elements of Data Out appear in the programmed order following DO n
3 (or 7) subsequent elements of Data Out appear in the programmed order following DO o
Read commands shown must be to the same device
Don’t Care
Etron Confidential
18
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Consecutive Read Bursts Required CAS Latencies (CL=3)
CK
CK
COMMAND
READ
NOP
Bank,
Col n
ADDRESS
READ
NOP
NOP
NOP
Bank,
Col o
CL=3
DQS
DO
n
DQ
DO
o
DO n (or o)=Data Out from column n (or column o)
Burst Length=4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first)
3 subsequent elements of Data Out appear in the programmed order following DO n
3 (or 7) subsequent elements of Data Out appear in the programmed order following DO o
Read commands shown must be to the same device
Don’t Care
Etron Confidential
19
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 9. Non-Consecutive Read Bursts Required CAS Latencies (CL=2.5)
CK
CK
COMMAND
READ
NOP
NOP
READ
NOP
NOP
Bank,
Col o
Bank,
Col n
ADDRESS
NOP
CL=2.5
DQS
DO
n
DQ
DO
o
DO n (or o)=Data Out from column n (or column o)
Burst Length=4
3 subsequent elements of Data Out appear in the programmed order following DO n
(and following DO o)
Don’t Care
Non-Consecutive Read Bursts Required CAS Latencies (CL=3)
CK
CK
COMMAND
ADDRESS
READ
NOP
NOP
READ
NOP
NOP
NOP
Bank,
Col o
Bank,
Col n
CL=3
DQS
DO
n
DQ
DO
o
DO n (or o)=Data Out from column n (or column o)
Burst Length=4
3 subsequent elements of Data Out appear in the programmed order following DO n
(and following DO o)
Etron Confidential
20
Rev. 1.2
Don’t Care
May 2009
EtronTech
EM6AA160TSA
Figure 10. Random Read Accesses Required CAS Latencies (CL=2.5)
CK
CK
COMMAND
ADDRESS
READ
READ
READ
READ
Bank,
Col n
Bank,
Col o
Bank,
Col p
Bank,
Col q
NOP
NOP
CL=2.5
DQS
DO
n'
DO
n
DQ
DO
o'
DO
o
DO
p
DO
p'
DO n, etc. =Data Out from column n, etc.
n', etc. =the next Data Out following DO n, etc. according to the programmed burst order
Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted
Reads are to active rows in any banks
Don’t Care
Random Read Accesses Required CAS Latencies (CL=3)
CK
CK
COMMAND
READ
READ
READ
READ
Bank,
Col n
Bank,
Col o
Bank,
Col p
Bank,
Col q
ADDRESS
NOP
NOP
CL=3
DQS
DO
n
DQ
DO
n'
DO
o
DO
o'
DO
p
DO n, etc. =Data Out from column n, etc.
n', etc. =the next Data Out following DO n, etc. according to the programmed burst order
Burst Length=2,4 or 8 in cases shown. If burst of 4 or 8, the burst is interrupted
Reads are to active rows in any banks
Don’t Care
Etron Confidential
21
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 11. Terminating a Read Burst Required CAS Latencies (CL=2.5)
CK
CK
COMMAND
READ
ADDRESS
Bank A,
Col n
NOP
BST
NOP
NOP
NOP
CL=2.5
DQS
DO
n
DQ
DO n = Data Out from column n
Cases shown are bursts of 8 terminated after 4 data elements
3 subsequent elements of Data Out appear in the programmed order following DO n
Don’t Care
Terminating a Read Burst Required CAS Latencies (CL=3)
CK
CK
COMMAND
READ
ADDRESS
Bank A,
Col n
NOP
BST
NOP
NOP
NOP
CL=3
DQS
DO
n
DQ
DO n = Data Out from column n
Cases shown are bursts of 8 terminated after 4 data elements
3 subsequent elements of Data Out appear in the programmed order following DO n
Don’t Care
Etron Confidential
22
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 12. Read to Write Required CAS Latencies (CL=2.5)
CK
CK
COMMAND
READ
BST
NOP
NOP
Bank,
Col o
Bank,
Col n
ADDRESS
NOP
WRITE
CL=2.5
tDQSS
min
DQS
DO
n
DQ
DI
o
DM
DO n (or o)= Data Out from column n (or column o)
Burst Length= 4 in the cases shown (applies for bursts of 8 as well; if burst length is 2, the BST
command shown can be NOP)
1 subsequent element of Data Out appears in the programmed order following DO n
Data in elements are applied following DI o in the programmed order
Don’t Care
Etron Confidential
23
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Read to Write Required CAS Latencies (CL=3)
CK
CK
COMMAND
READ
BST
NOP
NOP
Bank,
Col o
Bank,
Col n
ADDRESS
NOP
WRITE
tDQSS
min
CL=3
DQS
DO
n
DQ
DI
o
DM
DO n (or o)= Data Out from column n (or column o)
Burst Length= 4 in the cases shown (applies for bursts of 8 as well; if burst length is 2, the BST
command shown can be NOP)
1 subsequent element of Data Out appears in the programmed order following DO n
Data in elements are applied following DI o in the programmed order
Don’t Care
Etron Confidential
24
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 13. Read to Precharge Required CAS Latencies (CL=2.5)
CK
CK
COMMAND
READ
NOP
PRE
NOP
NOP
ACT
tRP
Bank A,
Col n
ADDRESS
Bank
(a or all)
Bank A,
Row
CL=2.5
DQS
DO
n
DQ
DO n = Data Out from column n
Cases shown are either uninterrupted bursts of 4, or interrupted bursts of 8
3 subsequent elements of Data Out appear in the programmed order
following DO n
Precharge may be applied at (BL/2) tCK after the READ command
Note that Precharge may not be issued before tRAS ns after the ACTIVE
command for applicable banks
The Active command may be applied if tRC has been met
Don’t Care
Etron Confidential
25
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Read to Precharge Required CAS Latencies (CL=3)
CK
CK
COMMAND
READ
NOP
PRE
NOP
NOP
ACT
tRP
Bank A,
Col n
ADDRESS
Bank
(a or all)
Bank A,
Row
CL=3
DQS
DO
n
DQ
DO n = Data Out from column n
Cases shown are either uninterrupted bursts of 4, or interrupted bursts of 8
3 subsequent elements of Data Out appear in the programmed order
following DO n
Precharge may be applied at (BL/2) tCK after the READ command
Note that Precharge may not be issued before tRAS ns after the ACTIVE
command for applicable banks
The Active command may be applied if tRC has been met
Don’t Care
Etron Confidential
26
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 14. Write Command
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
CA
A0 - A8
EN AP
A10
DIS AP
BA0,1
BA
CA=Column Address
BA=Bank Address
EN AP=Enable Autoprecharge
DIS AP=Disable Autoprecharge
Don’t Care
Etron Confidential
27
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 15. Write Max DQSS
T0
T1
T2
T3
T4
T5
T6
T7
CK
CK
COMMAND
WRITE
ADDRESS
Bank A,
Col n
NOP
NOP
NOP
tDQSS
max
DQS
DI
n
DQ
DM
DI n = Data In for column n
3 subsequent elements of Data In are applied in the programmed
order following DI n
A non-interrupted burst of 4 is shown
A10 is LOW with the WRITE command (AUTO PRECHARGE
disabled)
Don’t Care
Etron Confidential
28
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 16. Write Min DQSS
T0
T1
T2
T3
T4
T5
T6
CK
CK
COMMAND
NOP
WRITE
NOP
NOP
Bank A,
Col n
tDQSS
min
ADDRESS
DQS
DI
n
DQ
DM
DI n = Data In for column n
3 subsequent elements of Data In are applied in the programmed
order following DI n
A non-interrupted burst of 4 is shown
A10 is LOW with the WRITE command (AUTO PRECHARGE disabled)
Don’t Care
Etron Confidential
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Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 17. Write Burst Nom, Min, and Max tDQSS
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
CK
COMMAND
NOP
WRITE
NOP
NOP
NOP
NOP
Bank ,
Col n
ADDRESS
tDQSS (nom)
DQS
DI
n
DQ
DM
tDQSS (min)
DQS
DI
n
DQ
DM
tDQSS (max)
DQS
DI
n
DQ
DM
DI n = Data In for column n
3 subsequent elements of Data are applied in the programmed order following DI n
A non-interrupted burst of 4 is shown
A10 is LOW with the WRITE command (AUTO PRECHARGE disabled)
DM=UDM & LDM
Don’t Care
Etron Confidential
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Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 18. Write to Write Max tDQSS
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
CK
COMMAND
WRITE
NOP
NOP
NOP
NOP
Bank ,
Col o
Bank ,
Col n
ADDRESS
WRITE
tDQSS (max)
DQS
DI
n
DQ
DI
o
DM
DI n , etc. = Data In for column n,etc.
3 subsequent elements of Data In are applied in the programmed order following DI n
3 subsequent elements of Data In are applied in the programmed order following DI o
Non-interrupted bursts of 4 are shown
DM= UDM & LDM
Don’t Care
Etron Confidential
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Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 19. Write to Write Max tDQSS, Non Consecutive
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
CK
COMMAND
WRITE
NOP
NOP
Bank
Col n
ADDRESS
WRITE
NOP
NOP
Bank
Col o
tDQSS (max)
DQS
DI
n
DQ
DI
o
DM
DI n, etc. = Data In for column n, etc.
3 subsequent elements of Data In are applied in the programmed order following DI n
3 subsequent elements of Data In are applied in the programmed order following DI o
Non-interrupted bursts of 4 are shown
DM= UDM & LDM
Don’t Care
Etron Confidential
32
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 20. Random Write Cycles Max tDQSS
T0
T1
T2
T4
T3
T5
T6
T8
T7
T9
CK
CK
COMMAND
ADDRESS
WRITE
WRITE
WRITE
WRITE
WRITE
Bank
Col n
Bank
Col o
Bank
Col p
Bank
Col q
Bank
Col r
tDQSS (max)
DQS
DI
n
DQ
DI
n
DI
o
DI
o
DI
p
DI
p
DI
q
DI
q
DM
DI n, etc. = Data In for column n, etc.
n', etc. = the next Data In following DI n, etc. according to the programmed burst order
Programmed Burst Length 2, 4, or 8 in cases shown
If burst of 4 or 8, the burst would be truncated
Each WRITE command may be to any bank and may be to the same or different devices
DM= UDM & LDM
Don’t Care
Etron Confidential
33
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 21. Write to Read Max tDQSS Non Interrupting
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T12
T11
CK
CK
COMMAND
WRITE
NOP
NOP
NOP
NOP
READ
NOP
tWTR
ADDRESS
Bank
Col o
Bank
Col n
CL=3
tDQSS (max)
DQS
DI
n
DQ
DM
DI n, etc. = Data In for column n, etc.
1 subsequent elements of Data In are applied in the programmed order following DI n
A non-interrupted burst of 4 is shown
tWTR is referenced from the first positive CK edge after the last Data In Pair
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
The READ and WRITE commands are to the same devices but not necessarily to the same bank
DM= UDM & LDM
Don’t Care
Etron Confidential
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Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 22. Write to Read Max tDQSS Interrupting
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
T12
CK
CK
COMMAND
WRITE
NOP
NOP
NOP
READ
NOP
tWTR
ADDRESS
Bank
Col o
Bank
Col n
CL=3
tDQSS (max)
DQS
DI
n
DQ
DM
DI n, etc. = Data In for column n, etc.
1 subsequent elements of Data In are applied in the programmed order following DI n
An interrupted burst of 8 is shown, 2 data elements are written
tWTR is referenced from the first positive CK edge after the last Data In Pair
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
The READ and WRITE commands are to the same devices but not necessarily to the same bank
DM= UDM & LDM
Don’t Care
Etron Confidential
35
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 23. Write to Read Max tDQSS, ODD Number of Data, Interrupting
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T12
T11
CK
CK
COMMAND
WRITE
NOP
NOP
NOP
READ
NOP
NOP
tWTR
Bank
Col o
Bank
Col n
ADDRESS
CL=3
tDQSS (max)
DQS
DI
n
DQ
DM
DI n = Data In for column n
An interrupted burst of 8 is shown, 3 data elements are written
tWTR is referenced from the first positive CK edge after the last Data In Pair (not the last desired
Data In element)
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
The READ and WRITE commands are to the same devices but not necessarily to the same bank
DM= UDM & LDM
Don’t Care
Etron Confidential
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Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 24. Write to Precharge Max tDQSS, NON- Interrupting
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
T11
CK
CK
COMMAND
WRITE
ADDRESS
Bank a,
Col n
NOP
NOP
NOP
NOP
PRE
tWR
Bank
(a or al)
tRP
tDQSS (max)
DQS
DI
n
DQ
DM
DI n = Data In for column n
1 subsequent elements of Data In are applied in the programmed order following DI n
A non-interrupted burst of 4 is shown
tWR is referenced from the first positive CK edge after the last Data In Pair
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
DM= UDM & LDM
Don’t Care
Etron Confidential
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Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 25. Write to Precharge Max tDQSS, Interrupting
T0
T1
T2
T3
T4
T5
T6
T8
T7
T9
T10
T11
CK
CK
COMMAND
WRITE
ADDRESS
Bank a,
Col n
NOP
NOP
NOP
NOP
PRE
tWR
Bank
(a or all)
tDQSS (max)
tRP
*2
DQS
DI
n
DQ
DM
*1
*1
*1
*1
DI n = Data In for column n
An interrupted burst of 4 or 8 is shown, 2 data elements are written
tWR is referenced from the first positive CK edge after the last Data In Pair
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
*1 = can be don't care for programmed burst length of 4
*2 = for programmed burst length of 4, DQS becomes don't care at this point
DM= UDM & LDM
Don’t Care
Etron Confidential
38
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 26. Write to Precharge Max tDQSS ODD Number of Data Interrupting
T0
T1
T2
T3
T4
T5
T6
T8
T7
T9
T10
T11
CK
CK
COMMAND
WRITE
ADDRESS
Bank a,
Col n
NOP
NOP
NOP
NOP
PRE
tWR
Bank
(a or all)
tDQSS (max)
tRP
*2
DQS
DI
n
DQ
DM
*1
*1
*1
*1
DI n = Data In for column n
An interrupted burst of 4 or 8 is shown, 1 data element is written
tWR is referenced from the first positive CK edge after the last Data In Pair
A10 is LOW with the WRITE command (AUTO PRECHARGE is disabled)
*1 = can be don't care for programmed burst length of 4
*2 = for programmed burst length of 4, DQS becomes don't care at this point
DM= UDM & LDM
Don’t Care
Etron Confidential
39
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 27. Precharge Command
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
A0-A9,
A11,A12
ALL BANKS
A10
ONE BANK
BA
BA0,1
BA= Bank Address (if A10 is
LOW, otherwise don't care)
Don’t Care
Etron Confidential
40
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 28. Power-Down
T0
T1
T2
T3
T4
Tn
Tn+3 Tn+4 Tn+5 Tn+6
Tn+1 Tn+2
CK
CK
tIS
tIS
CKE
COMMAND
NOP
NOP
VALID
No column access
in progress
VALID
Exit power-down
mode
Enter power-down
mode
Don’t Care
Figure 29. Clock Frequency Change in Precharge
T0
T1
T2
T4
Tx
Tx+1
Ty
Ty+1
Ty+2
Ty+3
Ty+4
Tz
CK
CK
NOP
CMD
NOP
NOP
NOP
NOP
Valid
tIS
Frequency Change
Occurs here
CKE
DLL
RESET
tRP
Minmum 2 clocks
Required before
Changing frequency
Etron Confidential
Stable new clock
Before power down exit
41
200 Clocks
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 30. Data input (Write) Timing
tDQSH
tDQSL
DQS
tDS
DI
n
DQ
tDH
tDS
DM
tDH
DI n = Data In for column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are applied in the programmed order
following DI n
Don’t Care
Figure 31. Data Output (Read) Timing
tCH
tCL
CK
CK
DQS
DQ
tDQSQ
tDQSQ
max
max
tQH
tQH
Burst Length = 4 in the case shown
Etron Confidential
42
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 32. Initialize and Mode Register Sets
VDD
VDDQ
tVDT>=0
VTT
(system*)
VREF
tCK
tCH tCL
CK
CK
tIS tIH
CKE
tIS tIH
NOP
COMMAND
PRE
MRS
EMRS
AR
AR
PRE
MRS
ACT
CODE
RA
CODE
RA
BA0=L
BA1=L
BA
DM
tIS tIH
A0-A9,
A11,A12
CODE
ALL BANKS
A10
CODE
tIS tIH
ALL BANKS
CODE
tIS tIH
CODE
tIS tIH
tIS tIH
BA0=H
BA1=L
BA0,BA1
BA0=L
BA1=L
High-Z
DQS
High-Z
DQ
T=200µs
Power-up:
VDD and
CLK stable
**tMRD
Extended mode
Register set
**tMRD
tRP
tRFC
tRFC
**tMRD
200 cycles of CK**
Load Mode
Register,
(with A8=L)
Load Mode
Register,
Reset DLL (with A8=H)
*=VTT is not applied directly to the device, however tVTD must be greater than or equal to zero to avoid device latch-up
**=tMRD is required before any command can be applied, and 200 cycles of CK are required before any executable command can be applied
The two Auto Refresh commands may be moved to follow the first MRS but precede the second PRECHARGE ALL command
Don’t Care
Etron Confidential
43
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 33. Power Down Mode
tCK
tCH
tCL
CK
CK
tIS tIH
tIS
tIS
CKE
tIS tIH
COMMAND
VALID*
NOP
NOP
VALID
tIS tIH
ADDR
VALID
VALID
DQS
DQ
DM
Enter
power-down mode
Exit
power-down mode
No column accesses are allowed to be in progress at the time Power-Down is entered
*=If this command is a PRECHARGE ALL (or if the device is already in the idle state) then the Power-Down
mode shown is Precharge Power Down. If this command is an ACTIVE (or if at least one row is already active)
then the Power-Down mode shown is active Power Down.
Don’t Care
Etron Confidential
44
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 34. Auto Refresh Mode
tCK
tCH tCL
CK
CK
tIS tIH
CKE
VALID
VALID
tIS tIH
COMMAND
NOP
PRE
NOP
NOP
AR
NOP
AR
NOP
NOP
ACT
A0-A8
RA
A9,A11,A12
RA
ALL BANKS
RA
A10
ONE BANKS
tIS
BA0,BA1
tIH
RA
*Bank(s)
DQS
DQ
DM
tRP
tRFC
tRFC
* = Don't Care , if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (i.e., must precharge all active banks)
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH
NOP commands are shown for ease of illustration; other valid commands may be possible after tRFC
DM, DQ and DQS signals are all
Don't Care /High-Z for operations shown
Don’t Care
Etron Confidential
45
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 35. Self Refresh Mode
tCK
tCH
Clock must be stable before
Exiting Self Refresh mode
tCL
CK
CK
tIS tIH
tIS
tIS
CKE
tIS tIH
COMMAND
NOP
NOP
AR
VALID
tIS tIH
VALID
ADDR
DQS
DQ
DM
tRP*
tXSNR/
tXSRD**
Enter Self Refresh
mode
Exit Self Refresh
mode
* = Device must be in the All banks idle state prior to entering Self Refresh mode
** = tXSNR is required before any non-READ command can be applied, and tXSRD (200 cycles of CK) is
required before a READ command can be applied.
Don’t Care
Etron Confidential
46
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 36. Read without Auto Precharge
tCK
tCH tCL
CK
CK
tIH
tIS tIH
CKE
VALID
VALID
VALID
NOP
NOP
NOP
tIS tIH
NOP
COMMAND
READ
PRE
NOP
NOP
NOP
ACT
tIS tIH
Col n
A0-A8
RA
RA
A9,A11,A12
tIS
tIH
ALL BANKS
RA
A10
DIS AP
ONE BANKS
tIS tIH
Bank X
BA0,BA1
Bank X
*Bank X
CL=3
tRP
DM
Case 1:
tAC/tDQSCK=min
tDQSCK
min
tRPRE
tRPST
DQS
tLZ
min
DO
n
DQ
tLZ
tAC
min
Case 2:
tAC/tDQSCK=max
min
tDQSCK
max
tRPRE
tRPST
DQS
tLZ
max
tHZ
max
DO
n
DQ
tLZ
max
tAC
max
DO n = Data Out from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO n
DIS AP = Disable Autoprecharge
*=
Don't Care
, if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH
NOP commands are shown for ease of illustration; other commands may be valid at these times
Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks
Etron Confidential
47
Don’t Care
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 37. Read with Auto Precharge
tCK
tCH tCL
CK
CK
tIH
tIS tIH
CKE
VALID
VALID
VALID
NOP
NOP
NOP
tIS tIH
NOP
COMMAND
READ
NOP
NOP
NOP
NOP
ACT
tIS tIH
Col n
A0-A8
RA
RA
A9,A11,A12
EN AP
RA
A10
tIS tIH
tIS tIH
Bank X
BA0,BA1
Bank X
CL=3
tRP
DM
Case 1:
tAC/tDQSCK=min
tDQSCK
min
tRPST
tRPRE
DQS
tLZ
min
DO
n
DQ
tLZ
tAC
min
min
Case 2:
tAC/tDQSCK=max
tDQSCK
max
tRPST
tRPRE
DQS
tLZ
max
tHZ
max
DO
n
DQ
tLZ
max
tAC
max
DO n = Data Out from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO n
EN AP = Enable Autoprecharge
ACT = ACTIVE, RA = Row Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
The READ command may not be issued until tRAP has been satisfied. If Fast Autoprecharge is supported, tRAP = tRCD, else the READ
may not be issued prior to tRASmin
(BL*tCK/2)
Don’t Care
Etron Confidential
48
Rev. 1.2
May 2009
EtronTech
EM6AA160TSA
Figure 38. Bank Read Access
tCK
tCH tCL
CK
CK
tIS tIH
CKE
tIS tIH
NOP
COMMAND
ACT
NOP
NOP
NOP
READ
NOP
PRE
NOP
NOP
ACT
tIS tIH
A0-A8
Col n
RA
RA
RA
RA
A9,A11,A12
tIS
A10
tIH
ALL BANKS
RA
RA
DIS AP
ONE BANKS
Bank X
*Bank X
tIS tIH
Bank X
BA0,BA1
Bank X
tRC
tRAS
tRCD
tRP
CL=3
DM
Case 1:
tAC/tDQSCK=min
tDQSCK
min
tRPRE
tRPST
DQS
tLZ
DO
n
min
DQ
tLZ
tAC
tDQSCK
min
Case 2:
tAC/tDQSCK=max
min
max
tRPRE
DQS
tRPST
tHZ
tLZ
max
max
DO
n
DQ
tLZ
max
DO n = Data Out from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO n
tAC
max
DIS AP = Disable Autoprecharge
*=
Don't Care
, if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Note that tRCD > tRCD MIN so that the same timing applies if Autoprecharge is enabled (in which case tRAS
would be limiting)
Etron Confidential
49
Rev. 1.2
Don’t Care
May 2009
EtronTech
EM6AA160TSA
Figure 39. Write without Auto Precharge
tCK
tCH tCL
CK
CK
tIH
tIS tIH
CKE
VALID
tIS tIH
NOP
COMMAND
WRITE
NOP
NOP
NOP
NOP
PRE
NOP
NOP
ACT
tIS tIH
RA
Col n
A0-A8
RA
A9,A11,A12
tIS tIH
ALL BANKS
RA
A10
ONE BANKS
DIS AP
tIS tIH
Bank X
BA0,BA1
Case 1:
tDQSS=min
tDQSS
BA
*Bank X
tDSH
tDQSH
tRP
tDSH
tWR
tWPST
DQS
tDQSL
tWPRES
tWPRE
DI
n
DQ
DM
tDSS
Case 2:
tDQSS=max
tDQSS
tDQSH
tDSS
tWPST
DQS
tWPRES
tDQSL
tWPRE
DI
n
DQ
DM
DI n = Data In from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are provided in the programmed order following DI n
DIS AP = Disable Autoprecharge
*=
Don't Care , if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH
NOP commands are shown for ease of illustration; other commands may be valid at these times
Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the +
25% window of the corresponding positive clock edge
Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks
Etron Confidential
50
Rev. 1.2
Don’t Care
May 2009
EtronTech
EM6AA160TSA
Figure 40. Write with Auto Precharge
tCK
tCH tCL
CK
CK
tIS tIH
CKE
VALID
VALID
VALID
NOP
NOP
NOP
tIS tIH
COMMAND
NOP
WRITE
NOP
NOP
NOP
NOP
ACT
tIS tIH
RA
Col n
A0-A8
RA
A9,A11,A12
DIS AP
RA
A10
tIS tIH
Bank X
BA0,BA1
BA
tDAL
Case 1:
tDQSS=min
tDQSS
tDSH
tDQSH
tDSH
tWPST
DQS
tWPRES
tDQSL
tWPRE
DI
n
DQ
DM
Case 2:
tDQSS=max
tDQSS
tDSS
tDQSH
tDSS
tWPST
DQS
tWPRES
tDQSL
tWPRE
DI
n
DQ
DM
DI n = Data In from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DI n
EN AP = Enable Autoprecharge
ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25%
window of the corresponding positive clock edge
Etron Confidential
51
Rev. 1.2
Don’t Care
May 2009
EtronTech
EM6AA160TSA
Figure 41. Bank Write Access
tCK
tCH tCL
CK
CK
tIS tIH
CKE
tIS tIH
NOP
COMMAND
ACT
NOP
NOP
WRITE
NOP
NOP
NOP
NOP
PRE
tIS tIH
RA
A0-A8
Col n
RA
A9,A11,A12
tIS tIH
ALL BANKS
DIS AP
ONE BANK
RA
A10
tIS tIH
Bank X
BA0,BA1
Bank X
*Bank X
tRAS
tRCD
Case 1:
tDQSS=min
tWR
tDSH
tDQSS
tDQSH
tDSH
tWPST
DQS
tWPRES
tWPRE
tDQSL
DI
n
DQ
DM
tDSS
Case 2:
tDQSS=max
tDQSS
tDSS
tWPST
tDQSH
DQS
tWPRES
tDQSL
tWPRE
DI
n
DQ
DM
DI n = Data In from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DI n
DIS AP = Disable Autoprecharge
*=
Don't Care
, if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25%
window of the corresponding positive clock edge
Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks
Etron Confidential
52
Rev. 1.2
Don’t Care
May 2009
EtronTech
EM6AA160TSA
Figure 42. Write DM Operation
tCK
tCH tCL
CK
CK
tIS tIH
CKE
VALID
tIS tIH
NOP
COMMAND
WRITE
NOP
NOP
NOP
NOP
PRE
NOP
NOP
ACT
tIS tIH
RA
Col n
A0-A8
RA
A9,A11,A12
tIS tIH
ALL BANKS
RA
A10
ONE BANKS
DIS AP
tIS tIH
Bank X
BA0,BA1
Case 1:
tDQSS=min
tDQSS
BA
*Bank X
tDSH
tDQSH
tRP
tDSH
tWR
tWPST
DQS
tDQSL
tWPRES
tWPRE
DI
n
DQ
DM
tDSS
Case 2:
tDQSS=max
tDQSS
tDSS
tDQSH
tWPST
DQS
tWPRES
tDQSL
tWPRE
DI
n
DQ
DM
DI n = Data In from column n
Burst Length = 4 in the case shown
3 subsequent elements of Data In are provided in the programmed order following DI n
DIS AP = Disable Autoprecharge
*=
Don't Care , if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Although tDQSS is drawn only for the first DQS rising edge, each rising edge of DQS must fall within the + 25%
window of the corresponding positive clock edge
Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks
Etron Confidential
53
Rev. 1.2
Don’t Care
May 2009
EtronTech
EM6AA160TSA
Figure 43. 66 Pin TSOP II Package Outline Drawing Information
Units: mm
D
C
A2
L
E
HE
L1
C
A
θ
A1
b
e
S
F
(TYP)
Symbol
A
A1
A2
b
e
C
D
E
HE
L
L1
F
θ
S
D
y
Etron Confidential
Dimension in mm
Min
Nom
Max
--0.05
0.9
0.22
--0.095
22.09
10.03
11.56
0.40
----0°
-----
----1.0
--0.65
0.125
22.22
10.16
11.76
0.5
0.8
0.25
--0.71
---
1.2
0.2
1.1
0.45
--0.21
22.35
10.29
11.96
0.6
----8°
--0.10
Dimension in inch
Min
Nom
Max
--0.002
0.035
0.009
--0.004
0.87
0.395
0.455
0.016
----0°
-----
54
----0.039
--0.026
0.005
0.875
0.4
0.463
0.02
0.032
0.01
--0.028
---
0.047
0.008
0.043
0.018
--0.008
0.88
0.405
0.471
0.024
----8°
--0.004
Rev. 1.2
May 2009