TI TPS22965DSGR

TPS22965
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SLVSBJ0 – AUGUST 2012
Single Channel, Ultra-Low Resistance Load Switch
Check for Samples: TPS22965
FEATURES
DESCRIPTION
•
•
•
The TPS22965 is a small, ultra-low RON, single
channel load switch with controlled turn on. The
device contains an N-channel MOSFET that can
operate over an input voltage range of 0.8V to 5.5V
and can support a maximum continuous current of
6A. The switch is controlled by an on/off input (ON),
which is capable of interfacing directly with lowvoltage control signals. In the TPS22965, a 225-Ω onchip load resistor is added for quick output discharge
when switch is turned off.
1
2
•
•
•
•
•
•
•
Integrated Single Channel Load Switch
Input Voltage Range: 0.8V to 5.5V
Ultra low RON Resistance
– RON = 16mΩ at VIN = 5V (VBIAS = 5V)
– RON = 16mΩ at VIN = 3.6V (VBIAS = 5V)
– RON = 16mΩ at VIN = 1.8V (VBIAS = 5V)
6A Maximum Continuous Switch Current
Low Quiescent Current (50µA)
Low Control Input Threshold Enables Use of
1.2V/1.8V/2.5V/3.3V Logic
Configurable Rise Time
Quick Output Discharge (QOD)
SON 8-pin Package With Thermal Pad
ESD Performance Tested per JESD 22
– 2KV HBM and 1KV CDM
APPLICATIONS
•
•
•
•
•
•
•
Ultrabook™
Notebooks/Netbooks
Tablet PC
Consumer Electronics
Set-top Boxes/Residental Gateways
Telecom Systems
Solid State Drives (SSD)
Power
Supply
The TPS22965 is available in a small, space-saving
2mm x 2mm 8-pin SON package (DSG) with
integrated thermal pad allowing for high power
dissipation. The device is characterized for operation
over the free-air temperature range of –40°C to 85°C.
Feature List
RON Typical at 3.6 V (VBIAS = 5V)
(1)
Rise Time
Adjustable
Quick Output Discharge(2)
Yes
Maximum Output Current
6A
GPIO Enable
Active High
Operating Temperature
–40°C to 85°C
(1) See Application Information section for CT value vs. rise time.
(2) This feature discharges the output of the switch to GND
through a 225-Ω resistor, preventing the output from floating.
VIN
ON
CIN
16 mΩ
VOUT
ON
CL
RL
CT
OFF
GND
GND
VBIAS
TPS22965
Typical Application
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Ultrabook is a trademark of Intel.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
TPS22965
SLVSBJ0 – AUGUST 2012
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
ORDERABLE PART NO.
TOP-SIDE MARKING/STATUS
-40°C to 85°C
TA
DSG
Tape and reel 3000 units
PACKAGE
TPS22965DSGR
ZSA0
-40°C to 85°C
DSG
Tape and reel 250 units
TPS22965DSGT
ZSA0
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted) (1) (2)
VALUE
UNIT (2)
VIN
Input voltage range
–0.3 to 6
V
VOUT
Output voltage range
–0.3 to 6
V
VBIAS
Bias voltage range
–0.3 to 6
V
VON
Input voltage range
–0.3 to 6
V
IMAX
Maximum continuous switch current
6
A
IPLS
Maximum pulsed switch current, pulse <300 µs, 2% duty cycle
TA
Operating free-air temperature range (3)
TJ
Maximum junction temperature
TSTG
Storage temperature range
TLEAD
Maximum lead temperature (10-s soldering time)
ESD
(1)
(2)
(3)
Electrostatic discharge
protection
8
A
–40 to 85
°C
125
°C
–65 to 150
°C
300
°C
Human-Body Model (HBM)
2000
Charged-Device Model (CDM)
1000
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the
maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package
in the application (θJA), as given by the following equation: TA(max) = TJ(max) – (θJA × PD(max))
THERMAL INFORMATION
THERMAL METRIC (1)
TPS22965
DSG (8 PINS)
θJA
Junction-to-ambient thermal resistance
65.3
θJCtop
Junction-to-case (top) thermal resistance
74.2
θJB
Junction-to-board thermal resistance
35.4
ψJT
Junction-to-top characterization parameter
2.2
ψJB
Junction-to-board characterization parameter
36.0
θJCbot
Junction-to-case (bottom) thermal resistance
12.8
(1)
2
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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RECOMMENDED OPERATING CONDITIONS
MIN
MAX
UNIT
VIN
Input voltage range
0.8
VBIAS
V
VBIAS
Bias voltage range
2.5
5.5
V
VON
ON voltage range
0
VIN
V
VOUT
Output voltage range
VIN
V
VIH
High-level input voltage, ON
VBIAS = 2.5 V to 5.5 V
1.2
5.5
V
VIL
Low-level input voltage, ON
VBIAS = 2.5 V to 5.5 V
0
0.5
V
CIN
(1)
Input capacitor
1
(1)
µF
Refer to Application Information section.
ELECTRICAL CHARACTERISTICS
Unless otherwise note, the specification in the following table applies over the operating ambient temperature –40°C ≤ TA ≤
85°C (Full) and VBIAS = 5.0 V. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP MAX
UNIT
POWER SUPPLIES AND CURRENTS
IIN(VBIAS-ON)
VBIAS quiescent current
IIN(VBIAS-OFF) VBIAS shutdown current
IOUT = 0,
VIN = VON = VBIAS = 5.0 V
Full
VON = GND, VOUT = 0 V
Full
VIN = 5.0 V
IIN(VIN-OFF)
VIN off-state supply current
VON = GND,
VOUT = 0 V
ION
ON pin input leakage current
VON = 5.5 V
50
VIN = 3.3 V
VIN = 1.8 V
Full
VIN = 0.8 V
75
µA
2
µA
0.2
8
0.02
3
0.01
2
0.005
Full
µA
1
0.5
µA
RESISTANCE CHARACTERISTICS
VIN = 5.0 V
VIN = 3.3 V
RON
ON-state resistance
IOUT = –200 mA,
VBIAS = 5.0 V
VIN = 1.8 V
VIN = 1.5 V
VIN = 1.2 V
VIN = 0.8 V
RPD
Output pulldown resistance
VIN = 5.0 V, VON = 0V, IOUT = 15 mA
25°C
16
Full
25°C
25
16
Full
25°C
16
16
16
23
25
16
Full
Full
23
25
Full
25°C
23
25
Full
25°C
23
25
Full
25°C
23
23
25
225
300
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mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
Ω
3
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ELECTRICAL CHARACTERISTICS
Unless otherwise noted, the specification in the following table applies over the operating ambient temperature –40°C ≤ TA ≤
85°C (Full) and VBIAS = 2.5 V. Typical values are for TA = 25°C.
PARAMETER
TEST CONDITIONS
TA
MIN
TYP MAX
UNIT
POWER SUPPLIES AND CURRENTS
IOUT = 0,
VIN = VON = VBIAS = 2.5 V
Full
IIN(VBIAS-OFF) VBIAS shutdown current
VON = GND, VOUT = 0 V
Full
IIN(VIN-OFF)
VIN off-state supply current
VON = GND,
VOUT = 0 V
ION
ON pin input leakage current
VON = 5.5 V
IIN(VBIAS-ON)
VBIAS quiescent current
20
30
µA
2
µA
VIN = 2.5 V
0.01
3
VIN = 1.8 V
0.01
2
0.005
2
VIN = 1.2 V
Full
VIN = 0.8 V
0.003
Full
µA
1
0.5
µA
RESISTANCE CHARACTERISTICS
VIN = 2.5 V
VIN = 1.8 V
RON
ON-state resistance
IOUT = –200 mA,
VBIAS = 2.5 V
VIN = 1.5 V
VIN = 1.2 V
VIN = 0.8 V
RPD
4
Output pulldown resistance
VIN = 2.5 V, VON = 0V, IOUT = 1 mA
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25°C
20
Full
25°C
28
19
Full
25°C
18
18
25
27
17
Full
Full
25
27
Full
25°C
26
28
Full
25°C
26
25
27
275
325
mΩ
mΩ
mΩ
mΩ
mΩ
Ω
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SWITCHING CHARACTERISTIC MEASUREMENT INFORMATION
VIN
VOUT
ON
CT
CIN = 1µF
ON
+
-
(A)
OFF
CL
RL
VBIAS
GND
TPS22965
GND
GND
TEST CIRCUIT
VON
50%
50%
tOFF
tON
VOUT
50%
tF
tR
50%
90%
VOUT
90%
10%
10%
tD
t ON/t OFF WAVEFORMS
(A) Rise and fall times of the control signal is 100ns.
Figure 1. Test Circuit and tON/tOFF Waveforms
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
VIN = VON = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON
Turn-on time
1325
tOFF
Turn-off time
10
tR
VOUT rise time
tF
VOUT fall time
3.5
tD
ON delay time
500
RL = 10-Ω, CL = 0.1 µF, CT = 1000 pF
1625
µs
VIN = 0.8 V, VON = VBIAS = 5V, TA = 25ºC (unless otherwise noted)
tON
Turn-on time
tOFF
Turn-off time
600
tR
VOUT rise time
tF
VOUT fall time
5.5
tD
ON delay time
460
80
RL = 10-Ω, CL = 0.1 µF, CT = 1000 pF
300
µs
VIN = 2.5V, VON = 5 V, VBIAS = 2.5V, TA = 25ºC (unless otherwise noted)
tON
Turn-on time
tOFF
Turn-off time
tR
VOUT rise time
tF
VOUT fall time
tD
ON delay time
2200
9
RL = 10-Ω, CL = 0.1 µF, CT = 1000 pF
2275
µs
3.1
1075
VIN = 0.8 V, VON = 5 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON
Turn-on time
tOFF
Turn-off time
tR
VOUT rise time
tF
VOUT fall time
tD
ON delay time
1450
60
RL = 10-Ω, CL = 0.1 µF, CT = 1000 pF
875
µs
5.5
1010
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FUNCTIONAL BLOCK DIAGRAM
VIN
Charge
Pump
VBIAS
ON
Control
Logic
VOUT
CT
GND
Figure 2. Functional Block Diagram
Table 1. FUNCTIONAL TABLE
6
ON
VIN to VOUT
VOUT to GND
L
Off
On
H
On
Off
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DSG PACKAGE
VIN
1
8
VOUT
VOUT
8
1
VIN
VIN
2
7
VOUT
VOUT
7
2
VIN
ON
3
6
CT
CT
6
3
ON
VBIAS
4
5
GND
GND
5
4
VBIAS
BOTTOM VIEW
TOP VIEW
PIN DESCRIPTIONS
TPS22965
DSG
PIN NAME
I/O
DESCRIPTION
1
VIN
I
Switch input. Input bypass capacitor recommended for minimizing VIN dip. Recommended voltage
range for this pin for optimal RON performance is 0.8V to VBIAS.
2
VIN
I
Switch input. Input bypass capacitor recommended for minimizing VIN dip. Recommended voltage
range for this pin for optimal RON performance is 0.8V to VBIAS.
3
ON
I
Active high switch control input. Do not leave floating.
4
VBIAS
I
Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5V to 5.5V.
See Application Information section for more information.
5
GND
-
Device ground.
6
CT
O
Switch slew rate control. Can be left floating. See Application Information section for more
information.
7
VOUT
O
Switch output.
8
VOUT
O
Switch output.
Thermal Pad
-
Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See Application
Information for layout guidelines.
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TYPICAL CHARACTERISTICS
VBIAS vs. QUIESCENT CURRENT
VBIAS vs. SHUTDOWN CURRENT
0.7
60
0.6
IINOFF_VBIAS (µA)
IIN_VBIAS (µA)
50
−40C
25C
70C
85C
40
30
20
−40C
25C
70C
85C
0.5
0.4
0.3
0.2
VIN=VBIAS, VON = 5V, VOUT=OPEN
10
2.5 2.75
3
3.25 3.5 3.75 4 4.25 4.5 4.75
VBIAS (V)
5
VIN=VBIAS, VON=0V, VOUT=0V
0.1
2.5 2.75
5.25 5.5
3
3.25 3.5 3.75 4 4.25 4.5 4.75
VBIAS (V)
5
5.25 5.5
G070
G070
TEMPERATURE vs. RON
(VBIAS = 2.5V)
VIN vs. OFF-STATE VIN CURRENT
24
8.5
8
7.5
7
−40C
25C
70C
85C
VBIAS=5.5V, VON=0V, VOUT = 0V
23
22
6.5
21
5.5
20
5
Ron (mΩ)
IINOFF_VIN (µA)
6
VIN =0.8V
VIN =1.05
VIN =1.2
VIN=1.5V
VIN = 1.8V
VIN = 2.5V
4.5
4
3.5
19
18
17
3
2.5
16
2
15
1.5
1
14
0.5
0
0.8 1.2 1.6
VBIAS =2.5V, IOUT=−200mA
2
2.4 2.8 3.2 3.6
VIN (V)
4
4.4 4.8 5.2 5.6
13
−40
G067
8
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−15
10
35
Temperature (°C)
60
85
G063
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TYPICAL CHARACTERISTICS (continued)
TEMPERATURE vs. RON
(VBIAS = 5.5V)
VIN vs. RON
(VBIAS = 2.5V)
21
20
19.5
19
18.5
18
Ron (mΩ)
17.5
17
16.5
26
VIN =0.8V
VIN =1.05
VIN =1.2
VIN=1.5V
VIN = 1.8V
VIN = 2.5V
VIN = 3.3V
VIN =3.6V
VIN=4.2V
VIN=5V
VN=5.5V
24
23
22
21
16
15.5
20
19
18
17
15
14.5
16
14
15
13.5
14
13
12.5
12
−40
−40C
25C
70C
85C
25
Ron (mΩ)
20.5
13
VBIAS =5.5V, IOUT=−200mA
−15
10
35
Temperature (°C)
60
VBIAS =2.5V, IOUT = −200mA
12
0.8
85
1.05
1.3
1.55
1.8
VIN (V)
2.05
2.3
2.5
G064
G060
VIN vs. RON
(VBIAS = 5.5V)
VIN vs. RON
(TA = 25°C)
21
20
VBIAS =5.5V, IOUT = −200mA
Temperature=25C, IOUT=−200mA
VBIAS = 2.5V
VBIAS = 3.3V
VBIAS = 3.6V
VBIAS= 4.2V
VBIAS = 5V
VBIAS = 5.5V
19
20
18
19
Ron (mΩ)
Ron (mΩ)
17
16
18
15
17
−40C
25C
70C
85C
14
16
13
12
0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
VIN (V)
4
4.4 4.8 5.2 5.6
15
0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
VIN (V)
4
4.4 4.8 5.2 5.6
G061
G062
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TYPICAL CHARACTERISTICS (continued)
VIN vs. RPD
(VBIAS = 5.5V)
VON vs. VOUT
(TA = 25°C)
2.4
231
IPD=1mA, VBIAS=5.5V, VON=0V
−40C
25C
70C
85C
230
VIN=2V, Tempeature = 25C
2.2
2
1.8
229
228
VOUT (V)
Rpd (Ω)
1.6
227
1.4
1.2
1
0.8
226
VBIAS = 2.5V
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2
VBIAS=5V
VBIAS=5.5V
0.6
0.4
225
0.2
224
0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
VIN (V)
4
0
4.4 4.8 5.2 5.6
0
0.25
0.5
0.75
1
1.25 1.5
VON (V)
1.75
2
2.25
2.5
G065
G066
VIN vs. tD
(VBIAS = 2.5V, CT = 1nF)
VIN vs. tD
(VBIAS = 5.5V, CT = 1nF)
1500
1450
1400
650
VBIAS = 2.5V
CT = 1nf
VBIAS = 5.5V, CT = 1nf
600
1350
1300
1250
550
1200
1100
tD (µs)
tD (µs)
1150
1050
1000
500
450
950
900
400
850
800
−40C
25C
70C
85C
750
700
650
600
0.8
1
1.2
1.4
1.6
1.8
VIN (V)
2
2.2
2.4
2.6
300
0.8 1.2 1.6
G030
10
−40C
25C
70C
85C
350
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2
2.4 2.8 3.2 3.6
VIN (V)
4
4.4 4.8 5.2 5.5
G035
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TYPICAL CHARACTERISTICS (continued)
VIN vs. tF
(VBIAS = 2.5V, CT = 1nF)
VIN vs. tF
(VBIAS = 5.5V, CT = 1nF)
8
8
VBIAS = 2.5V
CT = 1nf
−40C
25C
70C
85C
7
VBIAS = 5.5V
CT = 1nf
−40C
25C
70C
85C
7
6
6
tFall (µs)
tFall (µs)
5
5
4
4
3
3
2
2
1
0.8
1
1
1.2
1.4
1.6
1.8
VIN (V)
2
2.2
2.4
0
0.8 1.2 1.6
2.6
2
2.4 2.8 3.2 3.6
VIN (V)
4
4.4 4.8 5.2 5.6
G036
G041
VIN vs. tOFF
(VBIAS = 2.5V, CT = 1nF)
VIN vs. tOFF
(VBIAS = 5.5V, CT = 1nF)
125
80
−40C
25C
70C
85C
70
VBIAS = 5.5V
CT = 1nf
−40C
25C
70C
85C
100
60
75
tOff (µs)
tOff (µs)
50
40
50
30
20
25
10
VBIAS = 2.5V
CT = 1nf
0
0.8
1
1.2
1.4
1.6
1.8
VIN (V)
2
2.2
2.4
2.6
0
0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
VIN (V)
4
4.4 4.8 5.2 5.6
G042
G047
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TYPICAL CHARACTERISTICS (continued)
VIN vs. tON
(VBIAS = 2.5V, CT = 1nF)
VIN vs. tON
(VBIAS = 5.5V, CT = 1nF)
1600
2700
−40C
25C
70C
85C
2600
2500
2400
1500
1400
−40C
25C
70C
85C
1300
2300
2200
1200
2000
tOn (µs)
tOn (µs)
2100
1900
1800
1100
1000
900
1700
800
1600
700
1500
1400
600
1300
1200
1100
0.8
1
1.2
1.4
1.6
1.8
VIN (V)
2
VBIAS = 2.5V
CT = 1nf
500
2.2
400
0.8 1.2 1.6
2.4
2.6
VBIAS = 5.5V
CT = 1nf
2
2.4 2.8 3.2 3.6
VIN (V)
4
4.4 4.8 5.2 5.6
G048
G053
VIN vs. tR
(VBIAS = 2.5V, CT = 1nF)
VIN vs. tR
(VBIAS = 5.5V, CT = 1nF)
2800
2000
−40C
25C
70C
85C
2450
1750
−40C
25C
70C
85C
1500
tRise (µs)
tRise (µs)
2100
1750
1250
1000
1400
750
1050
500
VBIAS= 2.5V
CT = 1nf
700
0.8
1
1.2
1.4
1.6
1.8
VIN (V)
2
2.2
2.4
VBIAS = 5.5V
CT = 1nf
2.6
250
0.8 1.2 1.6
G061
12
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2
2.4 2.8 3.2 3.6
VIN (V)
4
4.4 4.8 5.2 5.6
G059
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Product Folder Links: TPS22965
TPS22965
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SLVSBJ0 – AUGUST 2012
TYPICAL CHARACTERISTICS (continued)
VBIAS vs. tR
(VIN = 2.5V, CT = 1nF)
3000
−40C
25C
70C
85C
2750
2500
2250
tRise (µs)
2000
1750
1500
1250
1000
750
VIN = 2.5V
CT = 1nf
500
2.5 2.8
3
3.2 3.5 3.8 4 4.2 4.5 4.8
VBIAS (V)
5
5.2 5.5
G061
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13
TPS22965
SLVSBJ0 – AUGUST 2012
www.ti.com
TYPICAL AC SCOPE CAPTURES at TA = 25ºC, CT = 1nF (CH1 = VOUT, CH2 = ON)
14
TURN-ON RESPONSE TIME
(VIN = 0.8V, VBIAS = 2.5V, CIN = 1µF, CL = 0.1µF, RL = 10Ω)
TURN-ON RESPONSE TIME
(VIN = 0.8V, VBIAS = 5.0V, CIN = 1µF, CL = 0.1µF, RL = 10Ω)
TURN-ON RESPONSE TIME
(VIN = 2.5V, VBIAS = 2.5V, CIN = 1µF, CL = 0.1µF, RL = 10Ω)
TURN-ON RESPONSE TIME
(VIN = 5.0V, VBIAS = 5.0V, CIN = 1µF, CL = 0.1µF, RL = 10Ω)
TURN-OFF RESPONSE TIME
(VIN = 0.8V, VBIAS = 2.5V, CIN = 1µF, CL = 0.1µF, RL = 10Ω)
TURN-OFF RESPONSE TIME
(VIN = 0.8V, VBIAS = 5.0V, CIN = 1µF, CL = 0.1µF, RL = 10Ω)
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TYPICAL AC SCOPE CAPTURES at TA = 25ºC, CT = 1nF (CH1 = VOUT, CH2 = ON) (continued)
TURN-OFF RESPONSE TIME
(VIN = 2.5V, VBIAS = 2.5V, CIN = 1µF, CL = 0.1µF, RL = 10Ω)
TURN-OFF RESPONSE TIME
(VIN = 5.0V, VBIAS = 5.0V, CIN = 1µF, CL = 0.1µF, RL = 10Ω)
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15
TPS22965
SLVSBJ0 – AUGUST 2012
www.ti.com
APPLICATION INFORMATION
ON/OFF CONTROL
The ON pin controls the state of the switch. Asserting ON high enables the switch. ON is active high and has a
low threshold, making it capable of interfacing with low-voltage signals. The ON pin is compatible with standard
GPIO logic thresholds. It can be used with any microcontroller with 1.2V or higher GPIO voltage. This pin cannot
be left floating and must be driven either high or low for proper functionality.
INPUT CAPACITOR (OPTIONAL)
To limit the voltage drop on the input supply caused by transient in-rush currents when the switch turns on into a
discharged load capacitor or short-circuit, a capacitor needs to be placed between VIN and GND. A 1-µF ceramic
capacitor, CIN, placed close to the pins, is usually sufficient. Higher values of CIN can be used to further reduce
the voltage drop during high current applications. When switching heavy loads, it is recommended to have an
input capacitor about 10 times higher than the output capacitor to avoid excessive voltage drop.
OUTPUT CAPACITOR (OPTIONAL)
Due to the integrated body diode in the NMOS switch, a CIN greater than CL is highly recommended. A CL
greater than CIN can cause VOUT to exceed VIN when the system supply is removed. This could result in current
flow through the body diode from VOUT to VIN. A CIN to CL ratio of 10 to 1 is recommended for minimizing VIN dip
caused by inrush currents during startup, however a 10 to 1 ratio for capacitance is not required for proper
functionality of the device. A ratio smaller than 10 to 1 (such as 1 to 1) could cause slightly more VIN dip upon
turn-on due to inrush currents. This can be mitigated by increasing the capacitance on the CT pin for a longer
rise time (see below).
VIN and VBIAS VOLTAGE RANGE
For optimal RON performance, make sure VIN ≤ VBIAS. The device will still be functional if VIN > VBIAS but it will
exhibit RON greater than what is listed in the ELECTRICAL CHARACTERISTICS table. See Figure 3 for an
example of a typical device. Notice the increasing RON as VIN exceeds VBIAS voltage. Be sure to never exceed
the maximum voltage rating for VIN and VBIAS.
50
45
40
VBIAS = 2.5V
VBIAS = 3.3V
VBIAS = 3.6V
VBIAS= 4.2V
VBIAS = 5V
VBIAS = 5.5V
Ron (mΩ)
Temperature=25C, IOUT=−200mA
35
30
25
20
15
0.8 1.2 1.6
2
2.4 2.8 3.2 3.6
VIN (V)
4
4.4 4.8 5.2 5.6
G062
Figure 3. RON vs. VIN (VIN > VBIAS)
16
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TPS22965
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SLVSBJ0 – AUGUST 2012
ADJUSTABLE RISE TIME
A capacitor to GND on the CT pins sets the slew rate for each channel. The voltage on the CT pin can be as
high as 12V. Therefore, the minimum voltage rating for the CT cap should be 25V for optimal performance. An
approximate formula for the relationship between CT and slew rate is (the equation below accounts for 10% to
90% measurement on VOUT and does NOT apply for CT = 0pF. Use table below to determine rise times for when
CT = 0pF):
SR = 0.39 ´ CT + 13.4
(1)
Where,
SR = slew rate (in µs/V)
CT = the capacitance value on the CT pin (in pF)
The units for the constant 13.4 is in µs/V. The units for the constant 0.39 are in µs/(V*pF).
Rise time can be calculated by multiplying the input voltage by the slew rate. The table below contains rise time
values measured on a typical device. Rise times shown below are only valid for the power-up sequence where
VIN and VBIAS are already in steady state condition, and the ON pin is asserted high.
RISE TIME (µs) 10% - 90%, CL = 0.1µF, CIN = 1µF, RL = 10Ω
TYPICAL VALUES at 25°C, 25V X7R 10% CERAMIC CAP
CTx (pF)
5V
3.3V
1.8V
1.5V
1.2V
1.05V
0.8V
0
127
93
62
55
51
46
42
220
475
314
188
162
141
125
103
470
939
637
359
304
255
218
188
1000
1869
1229
684
567
476
414
344
2200
4020
2614
1469
1211
1024
876
681
4700
8690
5746
3167
2703
2139
1877
1568
10000
18360
12550
6849
5836
4782
4089
3449
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TPS22965
SLVSBJ0 – AUGUST 2012
www.ti.com
BOARD LAYOUT AND THERMAL CONSIDERATIONS
For best performance, all traces should be as short as possible. To be most effective, the input and output
capacitors should be placed close to the device to minimize the effects that parasitic trace inductances may have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects
along with minimizing the case to ambient thermal impedance.
The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use the
following equation as a guideline:
PD(max) =
TJ(max) - TA
QJA
(2)
Where:
PD(max) = maximum allowable power dissipation
TJ(max) = maximum allowable junction temperature (125°C for the TPS22965)
TA = ambient temperature of the device
ΘJA = junction to air thermal impedance. See Thermal Information section. This parameter is highly
dependent upon board layout.
The figure below shows an example of a layout. Notice the thermal vias located under the exposed thermal pad
of the device. This allows for thermal diffusion away from the device.
18
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PACKAGE OPTION ADDENDUM
www.ti.com
17-Aug-2012
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
TPS22965DSGR
PREVIEW
WSON
DSG
8
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
TPS22965DSGT
PREVIEW
WSON
DSG
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
31-Aug-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPS22965DSGR
Package Package Pins
Type Drawing
WSON
DSG
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
3000
330.0
8.4
Pack Materials-Page 1
2.3
B0
(mm)
K0
(mm)
P1
(mm)
2.3
1.15
4.0
W
Pin1
(mm) Quadrant
8.0
Q2
PACKAGE MATERIALS INFORMATION
www.ti.com
31-Aug-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPS22965DSGR
WSON
DSG
8
3000
367.0
367.0
35.0
Pack Materials-Page 2
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