SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Symbol Limit Unit VGS "20 V 75a TC = 25_C Continuous Drain Current (TJ = 175_C) ID TC = 125_C Pulsed Drain Current 250 IS 75 Continuous Source Current (Diode Conduction) Avalanche Current 75a IDM IAR 75 Avalanche Energy L = 0.1 mH EAS 280 Repetitive Avalanche Energyb L = 0.05 mH EAR 140 Maximum Power Dissipation TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) TO-220AB A mJ 187c PD 3.7 TJ, Tstg –55 to 175 TL 300 Symbol Limit W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Free Air (TO-220AB) Unit 40 RthJA RthJC 62.5 _C/W C/W 0.6 Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70745 S-04137—Rev. E, 18-Jun-01 www.vishay.com 2-1 SUP/SUB75N03-04 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C 50 On-State Drain Currentb ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 3 "500 VDS = 30 V, VGS = 0 V, TJ = 175_C Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs VDS = 5 V, VGS = 10 V mA m 200 120 A VGS = 10 V, ID = 75 A 0.0034 0.004 VGS = 4.5 V, ID = 75 A 0.005 0.006 VGS = 10 V, ID = 25 A, TJ = 125_C 0.006 VGS = 10 V, ID = 25 A, TJ = 175_C 0.008 VDS = 15 V, ID = 25 A nA 30 W S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 775 Total Gate Charge Qg 200 Gate-Source Charge Qgs 40 Gate-Drain Charge Qgd 40 Turn-On Delay Time td(on) 20 tr 40 Rise Time Turn-Off Delay Time Fall Time td(off) 10742 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 75 A VDD = 30 V, RL = 0.6 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W tf 1811 pF 250 nC 40 ns 190 95 Source-Drain Diode Ratings and Characteristics Diode Forward Voltageb VSD Reverse Recovery Time trr Peak Reverse Recovery Current Reverse Recovery Charge IRM(rec) Qrr IF = 75 A, VGS = 0 V 70 IF = 50 A, di/dt = 100 A/ms m 1.3 V 120 ns 2.8 6 A 0.1 0.36 mC Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2-2 Document Number: 70745 S-04137—Rev. E, 18-Jun-01 SUP/SUB75N03-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 200 VGS = 10, 9, 8, 7, 6, 5 V 200 4V I D – Drain Current (A) I D – Drain Current (A) 150 150 100 50 100 TC = 125_C 50 3V 25_C –55_C 0 0 0 2 4 6 8 0 10 VDS – Drain-to-Source Voltage (V) 2 Transconductance 4 5 On-Resistance vs. Drain Current 0.008 150 125 r DS(on) – On-Resistance ( Ω ) 25_C TC = –55_C 125_C 100 75 50 25 0 0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002 0.000 0 20 40 60 80 0 100 20 40 60 80 100 120 ID – Drain Current (A) VGS – Gate-to-Source Voltage (V) Capacitance Gate Charge 20 14000 V GS – Gate-to-Source Voltage (V) Ciss 12000 C – Capacitance (pF) 3 VGS – Gate-to-Source Voltage (V) 175 g fs – Transconductance (S) 1 10000 8000 6000 4000 Coss Crss 2000 0 VDS = 30 V ID = 75 A 16 12 8 4 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 70745 S-04137—Rev. E, 18-Jun-01 30 0 100 200 300 400 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB75N03-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150_C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 25_C 10 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 100 I D – Drain Current (A) I D – Drain Current (A) 80 60 40 100 100 ms Limited by rDS(on) 1 ms 10 10 ms 100 ms dc TC = 25_C Single Pulse 20 0 0 25 50 75 100 125 150 1 0.1 175 TC – Case Temperature (_C) 1.0 10.0 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70745 S-04137—Rev. E, 18-Jun-01