Excelics EFA120B/EFA120BV DATA SHEET Low Distortion GaAs Power FET 550 • • • • • • • +28.0dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EFA120B AND 11.5dB FOR EFA120BV AT 12GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EFA120BV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 20mA PER BIN RANGE D P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression Vds=8V, Ids=50% Idss D 95 100 G G 40 50 120 Chip Thickness: 75 ± 20 microns All Dimensions In Microns : Via Hole No Via Hole For EFA120B EFA120B f=12GHz f=18GHz f=12GHz f=18GHz 48 350 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS 156 50 MIN TYP 26.0 28.0 28.0 9.5 7.0 8.0 f=12GHz UNIT EFA120BV MAX MIN TYP 26.0 28.0 28.0 11.5 9.0 10.0 34 MAX dBm dB % 36 Idss Saturated Drain Current Vds=3V, Vgs=0V 200 340 Gm Transconductance Vds=3V, Vgs=0V 140 180 Vp Pinch-off Voltage Vds=3V, Ids=3.0mA BVgd Drain Breakdown Voltage Igd=1.2mA -12 -15 -12 -15 V BVgs Source Breakdown Voltage Igs=1.2mA -7 -14 -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 440 -2.0 200 340 140 180 -3.5 -2.0 40 440 mA mS -3.5 V o C/W 30 MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS EFA120BV EFA120B ABSOLUTE 1 CONTINUOUS 2 ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V 12V Vgs Gate-Source Voltage -8V -4V -8V -4V Ids Drain Current Idss 355mA Idss Idss Igsf Forward Gate Current 30mA 5mA 30mA 5mA Pin Input Power 26dBm @ 3dB Compression 26dBm @ 3dB Compression Tch Channel Temperature 175 oC 150oC 175oC 150oC Tstg Storage Temperature -65/175 oC -65/150oC -65/175oC -65/150oC Pt Total Power Dissipation 3.4W 2.8W 4.5W 3.8W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com 8V EFA120B/EFA120BV DATA SHEET Low Distortion GaAs Power FET EFA120B P -1d B & P AE v s. V ds P ou t & P AE v s. P in f = 12 G H z Ids = 50% Idss 60 40 P out (dB m ) or PAE (% 35 55 50 45 25 40 20 35 PAE (% ) P -1dB (dB m 30 30 15 25 10 5 6 7 8 9 P AE 30 P out 20 10 0 20 4 f = 12 G H z V ds = 8 V, Ids = 50% Idss -1 0 10 -5 0 5 10 15 20 25 P in (dB m ) Drain -Source Voltage (V) S-PARAMETERS EFA120B 8V, 1/2 Idss FREQ --- S11 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 0.950 0.911 0.881 0.875 0.873 0.871 0.878 0.883 0.888 0.909 0.916 0.914 0.933 0.923 -67.1 -106.2 -138.8 -153.5 -163.0 -170.7 -180.0 173.1 165.7 162.3 159.4 160.6 161.0 160.0 8.659 6.163 3.609 2.524 1.949 1.573 1.320 1.105 0.921 0.775 0.648 0.543 0.483 0.419 139.4 114.7 89.3 72.4 58.5 46.1 32.9 20.5 7.9 -2.9 -14.2 -21.8 -28.9 -34.4 0.034 0.047 0.054 0.053 0.052 0.047 0.047 0.045 0.045 0.046 0.049 0.054 0.061 0.072 55.2 36.7 21.6 17.5 14.4 13.8 12.5 13.1 12.7 11.8 12.9 15.6 20.2 24.4 0.254 0.222 0.212 0.251 0.307 0.370 0.446 0.521 0.583 0.637 0.685 0.715 0.740 0.758 -47.4 -79.6 -106.1 -118.6 -126.7 -134.4 -143.0 -152.2 -162.2 -172.1 177.4 167.3 158.7 152.4 S-PARAMETERS EFA120BV --- S21 --- --- S12 --- --- S22 --- 8V, 1/2 Idss FREQ --- S11 --- (GHz) MAG ANG MAG --- S21 --ANG MAG --- S12 --ANG MAG --- S22 --ANG 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 0.937 0.907 0.887 0.888 0.892 0.897 0.904 0.906 0.911 0.917 0.922 0.936 0.941 0.934 -64.1 -103.9 -140.6 -157.4 -167.0 -173.6 -179.8 174.0 167.5 160.9 155.1 154.0 152.0 149.5 10.367 7.564 4.476 3.096 2.337 1.864 1.553 1.317 1.134 0.975 0.837 0.702 0.603 0.530 141.1 117.0 90.1 72.9 59.4 47.5 35.8 24.2 12.0 -0.1 -11.7 -21.1 -29.3 -36.6 0.031 0.046 0.052 0.051 0.050 0.048 0.046 0.044 0.044 0.044 0.041 0.039 0.037 0.034 55.1 34.4 14.6 5.1 -0.3 -7.0 -11.6 -15.6 -21.1 -25.1 -30.2 -31.4 -31.3 -24.8 0.290 0.274 0.284 0.327 0.378 0.432 0.483 0.527 0.572 0.618 0.667 0.723 0.774 0.818 -50.6 -82.9 -110.6 -122.1 -129.3 -135.5 -142.6 -150.2 -159.1 -168.5 -177.5 173.1 167.9 165.6 Note: The data included 0.7 mils diameter Au bonding wires; 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each; no source wires for EFA120BV. 30