EFA480C-CP083 Low Distortion GaAs Power FET UPDATED 12/28/2004 FEATURES • • • • • • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION 16.0 dB GAIN AT 2 GHz 0.5x4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY All Dimensions in mil Tolerance: ± 3 mil Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB PAE PARAMETER/TEST CONDITIONS Output Power at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Gain at 1dB Compression f= Vds = 8 V, Ids=50% Idss f= Power Added Efficiency at 1dB Compression Vds = 8 V, Ids=50% Idss f= 2.0 GHz 4.0 GHz 2.0 GHz 4.0 GHz MIN TYP 32.0 33.5 33.5 16.0 11.0 14.5 MAX UNITS dBm dB 35 2.0 GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 800 1360 GM Transconductance VDS = 3 V, VGS = 0 V 560 720 VP Pinch-off Voltage VDS = 3 V, IDS = 10 mA -2.0 % 1760 mA mS -3.5 V BVGD Drain Breakdown Voltage IGD = 4.8 mA -12 -15 V BVGS Source Breakdown Voltage IGS = 4.8 mA -7 -14 V RTH* Thermal Resistance 14* o C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 CONTINUOUS2 12V -8V Idss 120mA 32dBm 175oC -65/175oC 9.7W 8V -4.0V 1.0A 20mA @ 3dB Compression 150 oC -65/150 oC 8.1W Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised January 2005 EFA480C-CP083 Low Distortion GaAs Power FET UPDATED 12/28/2004 S-PARAMETERS 8V, 1/2 Idss FREQ (GHz) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 --- S11 ----- S21 --MAG ANG MAG ANG 0.962 -126.6 10.630 107.1 0.954 -160.5 5.887 81.8 0.867 -174.8 4.989 69.7 0.854 171.4 3.891 55.7 0.840 161.0 3.287 43.1 0.826 151.3 2.978 30.3 0.805 139.5 2.803 15.9 0.781 124.9 2.672 -0.2 0.766 106.6 2.539 -17.8 0.760 86.7 2.384 -36.0 0.764 66.6 2.216 -54.4 0.773 47.5 2.049 -72.6 0.785 29.3 1.927 -89.9 0.802 7.3 1.813 -110.7 0.837 -17.0 1.599 -133.8 0.876 -38.5 1.288 -154.6 0.912 -53.7 1.010 -171.2 0.921 -64.5 0.786 175.8 0.929 -72.1 0.652 165.0 0.945 -81.4 0.581 156.5 --- S12 --MAG ANG 0.018 32.4 0.021 23.2 0.030 24.2 0.034 20.3 0.040 16.4 0.046 11.2 0.056 4.0 0.065 -6.7 0.074 -17.9 0.082 -31.2 0.090 -44.5 0.096 -58.5 0.101 -72.1 0.106 -88.9 0.101 -106.9 0.089 -123.1 0.076 -136.9 0.065 -143.6 0.061 -156.6 0.058 -165.6 --- S22 --MAG ANG 0.607 -175.7 0.612 177.7 0.524 168.9 0.516 163.0 0.490 157.7 0.446 151.8 0.397 143.7 0.351 132.3 0.323 116.2 0.316 98.1 0.322 79.8 0.332 60.8 0.313 38.4 0.352 13.8 0.438 -11.9 0.541 -32.6 0.641 -46.1 0.701 -55.5 0.721 -63.7 0.757 -66.3 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised January 2005