Excelics EFB025A PRELIMINARY DATA SHEET General Purpose GaAs FET • • • • • • • 420 +18.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.3 dB NOISE FIGURE AND 11 dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 5mA PER BIN RANGE 50 104 D D 48 260 40 S G 59 50 G 90 S 78 Chip Thickness: 75 ± 13 microns All Dimensions In Microns ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP 17 18.5 Output Power at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz 9 NF Noise Figure Vds=3V,Ids=15mA f=12GHz 1.3 GA Associated Gain Vds=3V,Ids=15mA f=12GHz 11 Idss Saturated Drain Current Vds=3V, Vgs=0V 35 Gm Transconductance Vds=3V, Vgs=0V 40 Vp Pinch-off Voltage Vds=3V, Ids=1.0mA P1dB G1dB 9 dB dB 105 BVgs Source Breakdown Voltage Igs=100uA -5.5 -8.5 Thermal Resistance (Au-Sn Eutectic Attach) mS -3.0 10V -6V Idss V V V o 155 ABSOLUTE1 mA 60 -1.5 -8.5 Drain-Source Voltage Gate-Source Voltage Drain Current dB 65 -5.5 Vds Vgs Ids dBm 11 Drain Breakdown Voltage Igd=100uA MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS UNIT 18.5 BVgd Rth MAX C/W CONTINUOUS2 6V -4V Idss Forward Gate Current 6mA 1mA Igsf Input Power 16dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 880mW 730mW Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFB025A PRELIMINARY DATA SHEET General Purpose GaAs FET S-PARAMETERS 6V,Idss FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --- (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 0.959 0.938 0.912 0.886 0.867 0.823 0.808 0.795 0.769 0.749 0.743 0.727 0.731 0.738 0.705 0.705 0.731 0.719 0.694 0.708 0.716 0.696 0.693 0.692 0.687 0.710 -15.7 -30.7 -44.3 -56.8 -68.2 -78.5 -87.9 -97.9 -107.9 -115.8 -124.1 -131.1 -137.8 -145.6 -152.3 -155.6 -160.8 -168.3 -171.2 -173.8 -177.8 176.6 172.5 168.0 163.5 160.7 5.152 5.002 4.745 4.460 4.277 3.995 3.699 3.543 3.371 3.140 2.971 2.771 2.613 2.541 2.364 2.141 2.122 2.091 1.896 1.834 1.894 1.782 1.673 1.653 1.531 1.520 166.7 155.2 144.2 134.8 126.5 116.6 108.9 102.3 93.9 86.7 80.1 73.4 68.3 61.9 54.0 50.7 47.6 39.2 34.1 33.0 27.1 19.6 15.8 10.2 4.4 0.4 0.018 0.034 0.048 0.060 0.071 0.078 0.084 0.091 0.097 0.098 0.100 0.101 0.101 0.105 0.103 0.098 0.103 0.107 0.102 0.104 0.114 0.111 0.110 0.113 0.109 0.113 62.0 62.8 57.5 52.3 48.0 41.7 36.8 32.9 27.4 22.5 19.3 15.5 12.7 9.2 4.2 4.6 4.6 -0.7 -2.3 -0.9 -3.0 -6.9 -7.4 -8.9 -10.7 -11.1 0.655 0.640 0.628 0.609 0.580 0.563 0.565 0.515 0.469 0.470 0.444 0.440 0.439 0.352 0.387 0.490 0.412 0.327 0.473 0.472 0.328 0.406 0.431 0.401 0.473 0.439 -6.9 -15.2 -24.3 -28.9 -34.2 -45.7 -48.7 -49.9 -60.5 -67.9 -71.6 -79.6 -77.4 -83.7 -108.7 -99.8 -85.9 -116.4 -122.7 -103.1 -115.7 -140.1 -134.3 -147.1 -156.4 -150.6 Note: The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 4 source wires, 7 mils each.