EIA1616-8P-2 16.2-16.4GHz 8-Watt Internally Matched Power FET UPDATED 11/09/06 FEATURES • • • • • • • 16.2– 16.4GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.0 dB Min. Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH EIA1616-8P-2 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETERS/TEST CONDITIONS1 SYMBOL P1dB G1dB ∆G PAE TYP 38.0 39.0 dBm 6.0 7.0 dB Output Power at 1dB Compression f = 16.2-16.4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 16.2-16.4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain Flatness f = 16.2-16.4GHz VDS = 8 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression VDS = 8 V, IDSQ ≈ 2200mA f = 16.2-16.4GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH MIN MAX UNITS ±0.6 dB 30 f = 16.2-16.4GHz % 2600 3200 mA VDS = 3 V, VGS = 0 V 4000 6000 mA VDS = 3 V, IDS = 40 mA -1.0 -2.5 2 Thermal Resistance 3.5 4.0 V o C/W Note: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage ABSOLUTE1 CONTINUOUS2 10V 8V Gate-Source Voltage -5V -3V Forward Gate Current 86.4mA 28.8mA Reverse Gate Current -14.4mA -4.8mA Input Power 38 dBm @ 3dB Compression Channel Temperature o 175 oC 175 C o Storage Temperature -65 to +175 C -65 to +175 oC Total Power Dissipation 38W 38W Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN). Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 EIA1616-8P-2 UPDATED 11/09/06 16.2-16.4GHz 8-Watt Internally Matched Power FET DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006