EXCELICS EIC1010-4

EIC1010-4
ISSUED 10/29/2008
10.0-10.70GHz 4-Watt Internally-Matched Power FET
FEATURES
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10.0–10.70GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 25.5 dBm SCL
100% Tested for DC, RF, and RTH
Excelics
EIC1010-4
YYWW
SN
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN
IDSS
Frequency
Output Power at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
Gain at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
Gain Flatness
VDS = 10 V, IDSQ ≈ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
Drain Current at 1dB Compression
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP
Pinch-off Voltage
Freq
P1dB
G1dB
∆G
PAE
Id1dB
IM3
RTH
Thermal Resistance
Note: 1. Tested with 100 Ohm gate resistor.
TYP
10
MAX
UNITS
10.7
Ghz
35.5
36.5
dBm
6.5
7.5
dB
±0.6
dB
30
%
1200
-43
VDS = 3 V, IDS = 20 mA
3
-46
mA
dBc
2000
2500
-2.5
-4.0
5.5
2. S.C.L. = Single Carrier Level.
1300
mA
V
o
6.0
C/W
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
Vds
Vgs
Igf
Igr
Pin
Tch
Tstg
Pt
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
ABSOLUTE1
CONTINUOUS2
15V
10V
-5V
-4V
48mA
14.4mA
-9.6mA
-2.4mA
36dBm
@ 3dB Compression
175C
175C
-65C to +175C
-65C to +175C
25W
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
October 2008
EIC1010-4
10.0-10.70GHz 4-Watt Internally-Matched Power FET
ISSUED 10/29/2008
PACKAGES OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EIC1010-4 (Hermetic)
EIC1010-4NH (Non-Hermetic)
Excelics
Excelics
EIC1010-4
EIC1010-4NH
YYWW
YYWW
SN
SN
ALL DIMENSIONS IN INCHES
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
Caution! ESD sensitive device.
ORDERING INFORMATION
Part Number
Packages
Grade1
fTest (GHz)
P1dB (min)
IM3 (min)2
EIC1010-4
Hermetic
Industrial
10.0-10.70GHz
35.5
-43
EIC1010-4NH
Non-Hermetic
Industrial
10.0-10.70GHz
35.5
-43
Notes:
1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in “Electrical Characteristics” table.
DISCLAIMER
EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN.
LIFE SUPPORT POLICY
EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR,
INC. AS HERE IN:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for
use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
October 2008