EXCELICS EIC1314-12

EIC1314-12
13.75-14.50 GHz 12-Watt Internally Matched Power FET
ISSUED 10/17/2008
FEATURES
•
•
•
•
•
•
•
13.75– 14.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41 dBm Output Power at 1dB Compression
6.0 dB Power Gain at 1dB Compression
23% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
Excelics
.024
EIC1314-12
.827±.010 .669
.421
.120 MIN
.120 MIN
YYWW
SN
.004
.125
.063
.508±.008
.442
.004
.168±.010
.105±.008
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
PARAMETERS/TEST CONDITIONS1
SYMBOL
P1dB
G1dB
∆G
IMD3
PAE
Output Power at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 4200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈ 4200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ ≈4200mA
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 29.0 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 14.50 GHz
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 4200mA
f = 13.75-14.50GHz
Id1dB
Drain Current at 1dB Compression
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP
Pinch-off Voltage
VDS = 3 V, IDS = 62 mA
RTH
MIN
TYP
40.5
41
dBm
5
6
dB
-42
f = 13.75-14.50GHz
Thermal Resistance
dB
-45
dBc
23
%
4200
4800
mA
8
10
A
-2.5
-4.0
1.8
2) S.C.L. = Single Carrier Level.
UNITS
±0.6
3
Note: 1) Tested with 50 Ohm gate resistor.
MAX
2.0
V
o
C/W
3) Overall Rth depends on case mounting.
MAXIMUM RATING AT 25°C1,2
SYMBOLS
Vds
Vgs
Pin
Tch
Tstg
Pt
ABSOLUTE1
CONTINUOUS2
Drain-Source Voltage
15
10V
Gate-Source Voltage
-5
-4V
Input Power
38dBm
@ 3dB Compression
PARAMETERS
Channel Temperature
o
175 oC
175 C
o
Storage Temperature
-65 to +175 C
-65 to +175 oC
Total Power Dissipation
75W
75W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 3
Revised October 2008
EIC1314-12
13.75-14.50 GHz 12-Watt Internally Matched Power FET
ISSUED 10/17/2008
[email protected] compression v.s Frequency
Output Power v.s Frequency
44
9.6
8.4
42
7.2
Gain/dB
Power/dBm
40
38
6
4.8
3.6
36
2.4
34
32
13.5
1.2
13.7
13.9
14.1
14.3
14.5
14.7
0
13.5
13.7
13.9
14.1
14.3
14.5
14.7
Frequency/GHz
Frequency/ GHz
P1dB v.s Frequency
G1dB v.s Frequency
Typical S-Parameters (T= 25°C, 50Ω system, de-embedded to edge of package)
VDS = 10 V, IDSQ ≈ 4200mA
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3
Revised October 2008
EIC1314-12
13.75-14.50 GHz 12-Watt Internally Matched Power FET
ISSUED 10/17/2008
THIRD-ORDER
INTERCEPT POINT IP3
100
80
Pout [S.C.L.] (dBm)
IP3 = Pout + IM3/2
60
40
20
f1 or f2
Pout
IM3
0
50
100
150
IM3
Pin
f1 f2
0
(2f1-f2) f1 f2 (2f2-f1)
(2f2 - f1) or (2f1 - f2)
200
Case Temperature / °C
Pin [S.C.L.] (dBm)
IM3 v.s Output Power
f1=14.5 GHz, f2=14.49 GHz
-20
-30
-40
IM3 / dBc
Total Power Dissipation / W
Power Dissipation v.s Temperature
-50
-60
-70
-80
13
16
19
22
25
28
31
Pout (S.C.L) / dBm
Typical IMD3 Data (T= 25°C)
VDS = 10 V, IDSQ ≈ 65% IDss
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 3
Revised October 2008