EIC2224-15 2.20 – 2.40 GHz 15W Internally Matched Power FET ISSUED 04/04/2006 2X 0.079 MIN 4X 0.102 FEATURES • • • • • • • Excelics EIC2224-15 2.20– 2.40GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.5 dBm Output Power at 1dB Compression 13.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.945 P1dB YYWW 0.315 G1dB 0.010 0.168 0.617 0.004 0.158 0.095 0.055 Caution! ESD sensitive device. MIN TYP 41.5 42.5 dBm 12.0 13.0 dB f = 2.20-2.40GHz f = 2.20-2.40GHz PAE Gain Flatness f = 2.20-2.40GHz VDS = 10V, IDSQ ≈ 4.6A Power Added Efficiency at 1dB Compression VDS = 10V, IDSQ ≈ 4.6A f = 2.20-2.40GHz Id1dB Drain Current at 1dB Compression IDSS Saturated Drain Current VP Pinch-off Voltage RTH Thermal Resistance2 ∆G 0.055 0.685 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression VDS = 10V, IDSQ ≈ 4.6A Gain at 1dB Compression VDS = 10V, IDSQ ≈ 4.6A 0.580 SN ELECTRICAL CHARACTERISTICS (Ta = 25OC) SYMBOLS 0.024 0.803 MAX UNIT ±0.6 dB 35 f = 2.20-2.40GHz % 4.8 5.4 A VDS = 3 V, VGS = 0 V 8.6 10.8 A VDS = 3 V, IDS = 86mA -2.5 -4.0 V 1.7 1.9 o C/W Note: 1. Tested with 25 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15V 10V Gate-Source Voltage -5V -4V Forward Gate Current 192mA 64mA Reserve Gate Current -33mA -11mA 42.0dBm @ 3dB Compression PARAMETERS Input Power Channel Temperature 175 C 175 oC Storage Temperature o -65 to +175 C -65 to +175 oC 79W 79W Total Power Dissipation o Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised April 2006