EIC2832-2 2.80-3.20 GHz 2-Watt Internally Matched Power FET UPDATED 02/14/2006 FEATURES • • • • • • • • Excelics 2.80– 3.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.5 dBm Output Power at 1dB Compression 12.0 dB Power Gain at 1dB Compression 35% Power Added Efficiency -46 dBc IM3 at PO = 22.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 EIC2832-2 .827±.010 .669 .421 .120 MIN .120 MIN YYWW SN .004 .125 .063 .508±.008 .442 .004 .168±.010 .105±.008 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. PARAMETERS/TEST CONDITIONS1 MIN TYP MAX UNITS 32.5 33.5 dBm 11.0 12.0 dB SYMBOL P1dB G1dB ∆G PAE Output Power at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compression f = 2.80-3.20GHz VDS = 10 V, IDSQ ≈ 550mA ±0.6 35 Drain Current at 1dB Compression IM3 Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 3.20GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 1000 1250 VP Pinch-off Voltage VDS = 3 V, IDS = 10 mA -2.5 -4.0 RTH f = 2.80-3.20GHz % Id1dB 600 -43 3 Thermal Resistance 700 2) S.C.L. = Single Carrier Level. mA -46 dBc 11 Note: 1) Tested with 100 Ohm gate resistor. dB 12 mA V o C/W 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 15 10V Gate-Source Voltage -5 -4V PARAMETERS Forward Gate Current 21.6mA 7.2mA Reserve Gate Current -3.6mA -1.2mA Input Power 32.5dBm @ 3dB Compression o Channel Temperature 175 C 175 oC Storage Temperature -65 to +175 oC -65 to +175 oC Total Power Dissipation 12.5W 12.5W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised February 2006