EMP201 17.5 – 21.0 GHz Power Ammplifier MMIC Issued Date: 12-18-03 FEATURES • • • 17.5 – 21.0 GHz Bandwidth 24.5dBm Output Power at 1dB Compression 18.0 dB Typical Power Gain APPLICATIONS • • Point-to-point and point-to-multipoint radio Military Radar Systems Dimension: 2250um X 1000um ELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS 21.0 GHz Operating Frequency Range 17.5 P1dB Output Power at 1dB Compression VDS = 8 V, IDSQ ≈ 1/2 IDSS 23.5 24.5 dBm Gss Small Signal Gain 16 18 dB IP3 Third Order Interception Point 31 dBm F Input RL Output RL Input Return Loss 8 10 dB Output Return Loss 6 8 dB Idd Power Supply Current 150 210 mA Vdd Power Supply Voltage 7 8 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 50 o C/W ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 8V VGS Gate to Source Voltage -3 V IDD Drain Current IGSF Forward Gate Current PIN Input Power TCH Channel Temperature 150°C TSTG Storage Temperature -65/150°C PT Total Power Dissipation 300mA 8mA @ 3dB compression 3.4W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com EMP201 17.5 – 21.0 GHz Power Ammplifier MMIC Issued Date: 12-18-03 Typical Performance: 1. P-1 and G-1 P201 P-1 & G-1 at 8V, 160mA 27 25 23 21 P-1 (dBm) 19 G-1 (dB) 17 17 18 19 20 21 22 Frequency (GHz) 2. Linear Gain and Return Loss Versus Frequency 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 S21 S22 S11 23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 18.5 18.0 17.5 17.0 16.5 16.0 freq, GHz Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com EMP201 17.5 – 21.0 GHz Power Ammplifier MMIC Issued Date: 12-18-03 ASSEMBLY DRAWING The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and separate the wires to minimize the mutual inductance. CHIP OUTLINE Chip Size 1000 x 2250 microns Chip Thickness: 75 ± 13 microns PAD Dimensions: 100 x 100 microns All Dimensions in Microns Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com