EMP312-P1 21.0 – 24.0 GHz Power Amplifier MMIC ISSUED DATE: 07-01-04 FEATURES • • • • 21.0 – 24.0 GHz Operating Frequency Range 28.0dBm Output Power at 1dB Compression 12.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 18dBm APPLICATIONS • • Point-to-point and point-to-multipoint radio Military Radar Systems Optional Packaging solutions are available contact the Excelics sales team for details. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=760mA) SYMBOL F P1dB Gss OIMD3 Input RL Output RL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS 24.0 GHz Operating Frequency Range 21.0 Output Power at 1dB Gain Compression 26.5 28.0 dBm Small Signal Gain Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 18dBm 9.0 12.0 dB -40 -37 dBc Input Return Loss -15 -10 dB Output Return Loss -15 -10 dB 1072 1288 mA 7 8 Idss Saturate Drain Current VDD Power Supply Voltage VDS =3V, VGS =0V Rth Thermal Resistance (Au-Sn Eutectic Attach) Tb Operating Base Plate Temperature 858 8 -35 V o C/W +85 ºC 1,2 ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 8V VGS Gate to Source Voltage -4 V IDD Drain Current Idss IGSF Forward Gate Current PIN Input Power TCH Channel Temperature 150°C TSTG Storage Temperature -65/150°C PT 15mA @ 3dB compression Total Power Dissipation 12.6W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised July 2004