EPA030C-70 High Efficiency Heterojunction Power FET UPDATED 01/06/2005 FEATURES • • • • • • • NON-HERMETIC LOW COST CERAMIC 70MIL PACKAGE +22.0 dBm OUTPUT POWER AT 1dB COMPRESSION 8.0 dB POWER GAIN AT 18GHz 0.3 x 300 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVICES EXTRA HIGH POWER EFFICIENCY AND HIGH RELIABILITY Idss SORTED IN 10mA PER BIN RANGE Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL PARAMETERS/TEST CONDITIONS1 MIN 19.5 TYP 22.0 22.0 11.5 8.0 P1dB Output Power at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS f = 12GHz f = 18GHz G1dB Gain at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS f = 12GHz f = 18GHz PAE Power Added Efficiency at 1dB Compression VDS = 6V, IDS ≈ 50% IDSS f = 12GHz IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 50 GM Transconductance VDS = 3 V, VGS = 0 V 60 VP Pinch-off Voltage VDS = 3 V, IDS = 1.0 mA BVGD Drain Breakdown Voltage IGD = 1.0mA -11 -15 BVGS Source Breakdown Voltage IGS = 1.0mA -7 -14 RTH 9.5 MAX UNITS dBm dB 45 % 90 130 95 mS -1.0 Thermal Resistance mA -2.5 V V V o 310* C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOL PARAMETERS 1 2 ABSOLUTE CONTINUOURS VDS Drain to Source Voltage 10 V 6V VGS Gate to Source Voltage -6 V -3 V IDS Drain Current Idss 65 mA IGSF Forward Gate Current 15 mA 2.5 mA PIN Input Power 19 dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/+175°C -65/+150°C 440mW 370mW PT Total Power Dissipation Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised January 2005