Excelics EPA160B DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY Idss SORTED IN 40mA PER BIN RANGE ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS 156 D D 48 370 100 S G S 95 50 120 40 G S Chip Thickness: 75 ± 13 microns All Dimensions In Microns MIN TYP Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=8V, Ids=50% Idss f=12GHz 29.0 31.0 31.0 10.5 5.5 Idss Saturated Drain Current Vds=3V, Vgs=0V 290 480 Gm Transconductance Vds=3V, Vgs=0V 320 500 Vp Pinch-off Voltage Vds=3V, Ids=4.5mA BVgd Drain Breakdown Voltage Igd=1.6mA -11 -15 V BVgs Source Breakdown Voltage Igs=1.6mA -7 -14 V Rth Thermal Resistance (Au-Sn Eutectic Attach) P1dB G1dB PAE PARAMETERS/TEST CONDITIONS 540 50 9.0 MAX dBm dB % 45 -1.0 660 PARAMETERS ABSOLUTE1 mA mS -2.5 33 MAXIMUM RATINGS AT 25OC SYMBOLS UNIT CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -3V Vgs Drain Current Idss 435mA Ids Forward Gate Current 80mA 14mA Igsf Input Power 28dBm @3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 4.1W 3.4W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com V o C/W EPA160B DATA SHEET High Efficiency Heterojunction Power FET P-1dB & PAE vs. Vds Pout & PAE vs. Pin f = 12 GHz Vds = 8V, Ids = 50% Idss 55 50 35 45 40 30 PAE (%) P-1dB (dBm) 40 35 25 30 4 5 6 7 8 Pout (dBm) or PAE (%) f = 12 GHz Ids = 50% Idss 50 PAE 40 30 Pout 20 10 0 0 5 Drain-Source Voltage (V) 10 15 Pin (dBm) S-PARAMETERS 8V, 1/2 Idss FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 Note: --- S11 ----- S21 --MAG ANG MAG ANG 0.902 -115.3 15.468 116.0 0.884 -146.5 8.678 96.8 0.881 -158.7 5.971 86.9 0.881 -166.4 4.579 79.4 0.880 -172.1 3.705 72.6 0.878 -176.6 3.113 66.5 0.879 179.0 2.703 60.7 0.882 174.5 2.374 55.1 0.881 169.9 2.110 49.6 0.887 165.5 1.900 44.4 0.891 160.6 1.718 38.8 0.898 155.6 1.557 33.2 0.905 151.0 1.411 27.7 0.908 146.6 1.277 22.3 0.910 143.2 1.151 17.2 0.912 140.2 1.051 12.1 0.920 137.9 0.956 7.7 0.934 135.9 0.880 3.0 0.934 134.4 0.810 -1.7 0.932 133.9 0.742 -5.7 0.923 134.3 0.684 -8.6 0.934 135.0 0.641 -11.5 0.946 134.6 0.616 -14.3 0.948 133.8 0.579 -17.7 0.949 133.0 0.558 -20.0 0.935 131.3 0.527 -22.3 --- S12 --MAG ANG 0.025 38.1 0.028 27.8 0.030 28.6 0.031 30.7 0.032 35.1 0.034 38.3 0.036 40.0 0.038 41.6 0.038 44.4 0.040 45.0 0.042 45.8 0.044 45.9 0.044 45.4 0.046 43.1 0.047 42.3 0.048 39.5 0.050 37.6 0.052 37.6 0.054 34.6 0.057 33.8 0.060 32.2 0.063 32.4 0.068 32.5 0.072 33.3 0.079 32.7 0.084 33.0 --- S22 --MAG ANG 0.298 -138.8 0.342 -156.8 0.351 -163.1 0.359 -165.6 0.367 -165.7 0.381 -165.8 0.396 -164.7 0.416 -163.6 0.437 -162.9 0.461 -161.9 0.491 -161.5 0.521 -161.7 0.554 -162.8 0.580 -164.2 0.605 -166.4 0.626 -168.6 0.645 -171.6 0.665 -174.5 0.684 -177.7 0.697 178.4 0.700 174.7 0.707 171.7 0.718 168.7 0.719 166.0 0.722 163.7 0.723 162.4 The data included 0.7 mils diameter Au bonding wires: 2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each. 20 25