EPA240B-100P High Efficiency Heterojunction Power FET UPDATED 02/15/2005 • • • • • • NON-HERMETIC 100MIL METAL FLANGE PACKAGE +32.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY D G ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS MIN TYP 31.0 32.5 32.5 10.5 7.5 PAE Output Power at 1dB Compression f= 12GHz Vds=8V, Ids=50% Idss f= 18GHz Gain at 1dB Compression f= 12GHz Vds=8V, Ids=50% Idss f= 18GHz Power Added Efficiency at 1dB Compression Vds=8 V, Ids=50% Idss f=12GHz Idss Saturated Drain Current Vds=3V, Vgs=0V 440 720 Gm Transconductance Vds=3V, Vgs=0V 480 760 Vp Pinch-off Voltage Vds=3V, Ids=6mA P1dB G1dB 9.0 MAX dBm dB 44 -1.0 UNIT % 940 mA mS -2.5 V BVgd Drain Breakdown Voltage Igd=2.4mA -11 -15 V BVgs Source Breakdown Voltage Igs=2.4mA -7 -14 V 23* ºC/W Rth • PARAMETERS/TEST CONDITIONS Thermal Resistance (Au-Sn Eutectic Attach) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION AT 25°C SYMBOLS PARAMETERS Drain-Source Voltage Vds Gate-Source Voltage Vgs Drain Current Ids Forward Gate Current Igsf Input Power Pin Channel Temperature Tch Storage Temperature Tstg Total Power Dissipation Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. CONTINUOUS1,2 8V -3V 710mA 20mA @ 3dB Compression 150 oC -65 to +150 oC 5.7W Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised February 2005