UTV100B 100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55RT, STYLE 2 The UTV100B is a COMMON EMITTER transistor capable of providing 100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The transistor includes double input and output prematching for full broadband capability. Gold Metalization and Diffused Ballasting are used to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 290 Watts Maximum Voltage and Current BVcbo Collector to Emiter Voltage BVceo Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 65 Volts 30 Volts 3.5 Volts 15 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature -40 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP Power Out - 1 dB Compression F =470 - 860 MHz 100 PldB Power Input Vcc = 28 Volts Pin Power Output - Linear 25 Po - ref Icq = 300 mA (total) Pg Power Gain - Small Sig 8.5 Efficiency 55 η Load Mismatch Tolerance Pout = 25 Watts Pk 5:1 VSWR * European Test Method, Vision = -8 dB, Sideband = - 16 dB, Sound = - 7 dB Collector to Emitter Breakdown BVceo Collector to Emitter Breakdown BVces Emitter to Base Breakdown BVebo Hfe Current Gain Cob Output Capacitance - (each side)* Thermal Resistance Rθjc * Not measureable due to internal prematch network Issue August 1996 Ic = 25 mA Ic =25 mA Ie = 30 mA Vce = 5 V, Ic = 1 A Vcb = 28V, F=1MHz Tc = 25 oC MAX 12.5 30 60 3.5 20 UNITS Watts Watts Watts dB % Volts Volts Volts 120 47 0.6 o pF C/W GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 UTV100B August 1996