HANBit HMF1M64F4VS FLASH-ROM MODULE 8MByte (1M x 64-Bit) ,120PIN SMM,3.3V Part No. HMF1M64F4VS GENERAL DESCRIPTION The HMF1M64F4VS is a high-speed flash read only memory (FROM) module containing 262,144 words organized in an x64bit configuration. The module consists of four 1M x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby m ode, system designer can get low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL-compatible FEATURES w Access time : 90, 100, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3V ± 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w 120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2 w Minimum 1,000,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume OPTIONS MARKING w Timing 90ns access -90 100ns access -100 120ns access -120 w Packages 120-pin SMM URL : www.hbe.co.kr REV.02(August,2002) F 1 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS PIN ASSIGNMENT P1 P2 PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 VCC 31 VSS 1 VCC 31 VSS 2 DQ32 32 DQ0 2 DQ16 32 DQ48 3 DQ33 33 DQ1 3 DQ17 33 DQ49 4 DQ34 34 DQ2 4 DQ18 34 DQ50 5 DQ35 35 DQ3 5 DQ19 35 DQ51 6 DQ36 36 DQ4 6 DQ20 36 DQ52 7 DQ37 37 DQ5 7 DQ21 37 DQ53 8 DQ38 38 DQ6 8 DQ22 38 DQ54 9 DQ39 39 DQ7 9 DQ23 39 DQ55 10 VCC 40 VSS 10 VCC 40 VSS 11 DQ40 41 DQ8 11 DQ24 41 DQ56 12 DQ41 42 DQ9 12 DQ25 42 DQ57 13 DQ42 43 DQ10 13 DQ26 43 DQ58 14 DQ43 44 DQ11 14 DQ27 44 DQ59 15 DQ44 45 DQ12 15 DQ28 45 DQ60 16 DQ45 46 DQ13 16 DQ29 46 DQ61 17 DQ46 47 DQ14 17 DQ30 47 DQ62 18 DQ47 48 DQ15 18 DQ31 48 DQ63 19 VCC 49 VSS 19 VCC 49 VSS 20 A1 50 A10 20 A20 50 NC[BANK1* ] 21 A2 51 A11 21 A0 51 BANK0* 22 A3 52 A12 22 A16 52 VSS 23 A4 53 A13 23 WE1* 53 BYTE* 24 A5 54 A14 24 WE2* 54 WE3* 25 VCC 55 VSS 25 VCC 55 VSS 26 A6 56 A15 26 OE* 56 NC[WE4*] 27 A7 57 A17 27 RESET* 57 NC[WE5*] 28 A8 58 A18 28 WE0* 58 NC[WE6*] 29 A9 59 A19 29 RY_BY* 59 NC[WE7*] 30 VCC 60 VSS 30 VCC 60 URL : www.hbe.co.kr REV.02(August,2002) 2 VSS HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS FUNCTIONAL BLOCK DIAGRAM DQ0 – DQ63 A0 – A19 64 20 A(0-19) DQ(0-15) /WE0 /WE /BYTE /OE U2 /CE RY-BY /Reset A0-19 DQ(16-31) /WE1 /WE /BYTE /OE U3 /CE RY-BY /Reset A(0-19) DQ(32-47) /WE /WE2 /OE /BYTE /CE U1 RY-BY /Reset A(0-19) DQ(48-63) /WE3 /WE /OE /OE /BANK0 /CE RY_/BY RY-BY /BYTE U4 /Reset /Reset /BYTE URL : www.hbe.co.kr REV.02(August,2002) 3 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS TRUTH TABLE MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -40oC to +85oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN TYP. MAX Vcc for ± 10% device Supply Voltages Vcc 2.7V 3.0 3.6V Ground VSS 0 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNIT Input Leakage Current Vcc=Vcc max, V IN= GND to Vcc IL1 -10 1.0 µA Output Leakage Current Vcc=Vcc max, V OUT= GND to Vcc IL0 -10 1.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH 0.85x Vcc - V Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL - 0.4 V - 64 - 32 /CE = VIL, 5MHZ ICC1 Vcc Active Read Current (1) /OE = VIH, 1MHZ mA Vcc Active Write Current (2) /CE = VIL, /OE=VIH ICC2 - 120 mA Vcc Standby Current /CE, /RESET=Vcc±0.3V ICC3 - 120 mA VLKO 1.5 - V Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz). 2. Icc active while embedded algorithm (program or erase) is in progress 3. Not 100% tested URL : www.hbe.co.kr REV.02(August,2002) 4 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. Block Erase Time - Chip Erase Time TYP. MAX. 0.7 15 27 COMMENTS sec Excludes 00H programming prior to erasure sec Word Programming Time - 11 330 µs Chip Programming Time - 12 36 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL CIN PARAMETER DESCRIPTION TEST SETUP MIN MAX UNIT VIN = 0 - 10 pF VOUT = 0 - 10 pF VIN = 0 - 10 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : Capacitance is periodically sampled and not 100% tested . TEST SPECIFICATIONS TEST CONDITION VALUE Output load UNIT 1TTL gate Input rise and full times 5 ns 0 to 3 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL : www.hbe.co.kr REV.02(August,2002) 5 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS AC CHARACTERISTICS u Read Only Operations Characteristics SPEED PARAMETER DESCRIPTION - 90 MIN -100 MAX MAX 100 MIN MAX tRC Read Cycle Time tACC Address Access time 90 100 120 ns tCE Chip Enable to Access time 90 100 120 ns tOE Output Enable time 35 40 50 ns tDF Chip Enable to Output High-Z 30 30 30 ns tOEH Output Enable Hold Time Output Hold Time From Addresses, /CE or /OE tQH 90 MIN UNIT -120 120 ns 0 0 0 ns 0 0 0 ns u Erase/Program Operations Alternate /WE Controlled Writes - 90 PARAMETER DESCRIPTION -100 -120 MIN MAX MIN MAX MIN MAX tWC Write Cycle Time (1) 90 - 100 - 120 - ns tAS Address Setup Time 0 - 0 - 0 - ns tAH Address Hold Time 45 - 45 - 50 - ns - 45 - 50 - ns tDS Data Setup Time 45 tDH Data Hold Time 0 - 0 - 0 - ns tOES Output Enable Setup Time 0 - 0 - 0 - ns - 0 - 0 - ns Read Recover Time Before Write 0 tCS /CE Setup Time 0 - 0 - 0 - ns tCH /CE Hold Time 0 - 0 - 0 - ns tGHWL tWP Write Pulse Width 45 - 45 - 50 - ns tWPH Write Pulse Width High 30 - 30 - 30 - ns tPGM Programming Operation tBERS Block Erase Operation (2) 11 11 11 ns 0.7 50 - 0.7 50 - 0.7 50 - ns tVCS Vcc set up time tRB Write Recover Time Before RY_/BY 0 - 0 - 0 - ns /RESRT High Before Read 50 - 50 - 50 - ns tRPD /RESRT to Power Down Time 20 - 20 - 20 - ns tRP /RESRT Pulse Width 500 - 500 - 500 - ns /RESRT Setup Time 500 - 500 - 500 - ns tRH tRSTS ns Notes : : 1. Not 100% tested 2 . The duration of the program or erase operation varies and is calculated in the internal algorithms. URL : www.hbe.co.kr REV.02(August,2002) 6 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS u Erase/Program Operations Alternate /CE Controlled Writes - 90 PARAMETER -100 -120 DESCRIPTION MIN MAX MIN MAX MIN MAX tWC Write Cycle Time(1) 90 - 100 - 120 - ns tAS Address Setup Time 0 - 0 - 0 - ns tAH Address Hold Time 45 - 45 - 50 - ns tDS Data Setup Time 45 - 45 - 50 - ns tDH Data Hold Time 0 - 0 - 0 - ns tOES Output Enable Setup Time 0 - 0 - 0 - ns Read Recover Time Before Write 0 - 0 - 0 - ns tCS /CE Setup Time 0 - 0 - 0 - ns tCH /CE Hold Time 0 - 0 - 0 - ns tWP Write Pulse Width 45 - 45 - 50 - ns tWPH Write Pulse Width High 30 - 30 - 30 - ns tPGM Programming Operation tBERS Block Erase Operation (2) tGHWL 11 0.7 11 - 0.7 11 - 0.7 ns - ns Notes : 1. Not 100% tested 2 . This does not include the preprogramming time u READ OPERATIONS TIMING URL : www.hbe.co.kr REV.02(August,2002) 7 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS u RESET TIMING u PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes URL : www.hbe.co.kr REV.02(August,2002) 8 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS Alternate /CE Controlled Writes u CHIP/BLOCK ERASE OPERATION TIMINGS URL : www.hbe.co.kr REV.02(August,2002) 9 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION URL : www.hbe.co.kr REV.02(August,2002) 10 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION URL : www.hbe.co.kr REV.02(August,2002) 11 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS PACKAGE DIMMENSIONS Unit : mm PCB Thickness: 1.3 ± 0.1mm URL : www.hbe.co.kr REV.02(August,2002) 12 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VS ORDERING INFORMATION Part Number Density Org. Package HMF1M64F4VS-90 8MByte X 64 120 Pin-SMM HMF1M64F4VS-100 8MByte X 64 HMF1M64F4VS-120 8MByte X 64 URL : www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 3.3V 90ns 120 Pin-SMM 4EA 3.3V 100ns 120 Pin-SMM 4EA 3.3V 120ns 13 Number HANbit Electronics Co., Ltd.