HANBit HMF1M32F2VSA Flash-ROM Module 4MByte (1Mx32Bit), 80Pin-SMM, 3.3V Design Part No. HMF1M32F2VSA GENERAL DESCRIPTION The HMF1M32F2VSA is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of Two 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can g et low-power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTL-compatible. PIN ASSIGNMENT FEATURES P1 P2 PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 VCC 21 VCC 1 VCC 21 VCC w Access time: 90, 100, 120ns 2 NC (CE0*) 22 DQ16 2 DQ15 22 NC w High-density 8MByte design 3 NC 23 DQ24 3 DQ7 23 NC w High-reliability, low-power design 4 NC 24 DQ17 4 DQ14 24 BYTE* w Single + 3.0V ± 0.5V power supply 5 NC 25 DQ25 5 DQ6 25 OE* w All in/outputs are LVTTL-compatible 6 RY_BY* 26 DQ18 6 DQ13 26 CE1* w FR4-PCB design 7 VSS 27 VSS 7 VSS 27 VSS w 80-pin Designed by 8 RESET* 28 DQ26 8 DQ5 28 A13 40-pin Fine Pitch Connector (x 2EA) 9 WE* 29 DQ19 9 DQ12 29 A29 w Minimum 1,000,000 write/erase cycle 10 A10 30 DQ27 10 DQ4 30 A11 w Sector erases architecture 11 A21 31 DQ20 11 DQ11 31 A12 12 A20 32 DQ28 12 DQ3 32 A22 13 A19 33 DQ21 13 DQ10 33 A23 14 VSS 34 VSS 14 VSS 34 VSS 15 A18 35 DQ29 15 DQ2 35 A24 16 A17 36 DQ22 16 DQ9 36 A25 17 A16 37 DQ30 17 DQ1 37 A26 18 A15 38 DQ23 18 DQ8 38 A27 19 A14 39 DQ31 19 DQ0 39 A28 20 VCC 40 VCC 20 VCC 40 VCC w Part Identification - HMF1M32F2VSA : Socket 5mm OPTIONS MARKING w Timing 90ns access -90 100ns access -100 120ns access -120 w Packages 80-pin SMM F 4 cf : Address & Data Bus is organized for LG Specification. ( A10 & DQ0 are MSB, A29 & DQ31 are LSB) URL : www.hbe.co.kr REV.02(August, 2002) 1 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA FUNCTIONAL BLOCK DIAGRAM 32 DQ31- DQ0 20 A29 – A10 A0-19 DQ 0-15 /WE /OE U1 /CE RY-BY /Reset A0-19 DQ 16-31 /WE /WE /OE /OE /CE1 /CE /RY_BY RY-BY /Reset /RESET URL : www.hbe.co.kr REV.02(August, 2002) U2 2 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA TRUTH TABLE MODE /OE /CE /WE /RESET DQ ( /BYTE=L ) POWER STANDBY X H X Vcc±0.3V HIGH-Z STANDBY NOT SELECTED H L H H HIGH-Z ACTIVE READ L L H H DOUT ACTIVE WRITE or ERASE X L L H DIN ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to Vcc+0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -40oC to +85oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN TYP. MAX Vcc for ± 10% device Supply Voltages Vcc 2.7V 3.0 3.6V Ground VSS 0 0 0 DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNIT Input Leakage Current Vcc=Vcc max, VIN= GND to Vcc IL1 -10 1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 -10 1.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH 0.85x Vcc - V Output Low Voltage IOL = 4.0mA, Vcc =Vcc min VOL - 0.4 V - 32 - 16 /CE = VIL, 5MHZ Vcc Active Read Current (1) ICC1 /OE = VIH, 1MHZ mA Vcc Active Write Current (2) /CE = V IL, /OE=VIH ICC2 - 60 mA Vcc Standby Current /CE, /RESET=Vcc±0.3V ICC3 - 60 mA VLKO 1.5 - V Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz). 2. Icc active while embedded algorithm (program or erase) is in progress 3. Not 100% tested URL : www.hbe.co.kr REV.02(August, 2002) 3 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. Block Erase Time - Chip Erase Time TYP. MAX. 0.7 15 COMMENTS Excludes 00H programming prior to erasure sec 27 sec Word Programming Time - 11 330 µs Chip Programming Time - 12 36 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER SYMBOL PARAMETER DESCRIPTION CIN TEST SETUP MIN MAX UNIT VIN = 0 - 10 pF VOUT = 0 - 10 pF VIN = 0 - 10 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes : Capacitance is periodically sampled and not 100% tested. TEST SPECIFICATIONS TEST CONDITION VALUE Output load UNIT 1TTL gate Input rise and full times 5 ns 0 to 3 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL : www.hbe.co.kr REV.02(August, 2002) 4 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA AC CHARACTERISTICS u Read Only Operations Characteristics SPEED PARAMETER DESCRIPTION - 90 MIN -100 MAX MAX 100 MIN MAX tRC Read Cycle Time tACC Address Access time 90 100 120 ns tCE Chip Enable to Access time 90 100 120 ns tOE Output Enable time 35 40 50 ns tDF Chip Enable to Output High -Z 30 30 30 ns tOEH Output Enable Hold Time Output Hold Time From Addresses, /CE or /OE tQH 90 MIN UNIT -120 120 ns 0 0 0 ns 0 0 0 ns u Erase/Program Operations Alternate /WE Controlled Writes - 90 PARAMETER DESCRIPTION -100 MIN MAX MIN Write Cycle Time (1) 90 - Address Setup Time 0 - tAH Address Hold Time 45 tDS Data Setup Time tWC tAS tDH tOES tGHWL tCS -120 MAX MIN MAX 100 - 120 - ns 0 - 0 - ns - 45 - 50 - ns 45 - 45 - 50 - ns Data Hold Time 0 - 0 - 0 - ns Output Enable Setup Time 0 - 0 - 0 - ns Read Recover Time Before Write 0 - 0 - 0 - ns /CE Setup Time 0 - 0 - 0 - ns - 0 - 0 - ns tCH /CE Hold Time 0 tWP Write Pulse Width 45 - 45 - 50 - ns tWPH Write Pulse Width High 30 - 30 - 30 - ns tPGM Programming Operation tBERS Block Erase Operation (2) tVCS Vcc set up time 11 11 11 ns 0.7 50 - 0.7 50 - 0.7 50 - ns Write Recover Time Before RY_/BY 0 - 0 - 0 - ns tRH /RESRT High Before Read 50 - 50 - 50 - ns tRPD /RESRT to Power Down Time 20 - 20 - 20 - ns /RESRT Pulse Width 500 - 500 - 500 - ns /RESRT Setup Time 500 - 500 - 500 - ns tRB tRP tRSTS ns Notes : : 1. Not 100% tested 2 . The duration of the program or erase operation varies and is calculated in the internal algorithms. URL : www.hbe.co.kr REV.02(August, 2002) 5 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA u Erase/Program Operations Alternate /CE Controlled Writes - 90 PARAMETER -100 -120 DESCRIPTION MIN MAX MIN MAX MIN MAX tWC Write Cycle Time(1) 90 - 100 - 120 - ns tAS Address Setup Time 0 - 0 - 0 - ns tAH Address Hold Time 45 - 45 - 50 - ns tDS Data Setup Time 45 - 45 - 50 - ns tDH Data Hold Time 0 - 0 - 0 - ns tOES Output Enable Setup Time 0 - 0 - 0 - ns Read Recover Time Before Write 0 - 0 - 0 - ns tCS /CE Setup Time 0 - 0 - 0 - ns tCH /CE Hold Time 0 - 0 - 0 - ns tWP Write Pulse Width 45 - 45 - 50 - ns tWPH Write Pulse Width High 30 - 30 - 30 - ns tPGM Programming Operation tBERS Block Erase Operation (2) tGHWL 11 0.7 11 - 0.7 11 - 0.7 ns - ns Notes : 1. Not 100% tested 2 . This does not include the preprogramming time u READ OPERATIONS TIMING URL : www.hbe.co.kr REV.02(August, 2002) 6 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA u RESET TIMING u PROGRAM OPERATIONS TIMING Alternate /WE Controlled Writes URL : www.hbe.co.kr REV.02(August, 2002) 7 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA uALTERNATE /CE CONTROLLED WRITES u CHIP/BLOCK ERASE OPERATION TIMINGS URL : www.hbe.co.kr REV.02(August, 2002) 8 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION URL : www.hbe.co.kr REV.02(August, 2002) 9 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION URL : www.hbe.co.kr REV.02(August, 2002) 10 HANBit Electronics Co., Ltd. HANBit HMF1M32F2VSA PACKAGE DIMENSIONS 1.3±0.10 mm ORDERING INFORMATION Part Number Density Org. Package HMF1M32F2VSA-90 4MByte x 32 80Pin – SMM HMF1M32F2VSA-100 4Mbyte x 32 HMF1M32F2VSA-120 4Mbyte x 32 URL : www.hbe.co.kr REV.02(August, 2002) Component Vcc SPEED 2EA 3.3V 90ns 80Pin – SMM 2EA 3.3V 100ns 80Pin – SMM 2EA 3.3V 120ns 11 Number HANBit Electronics Co., Ltd.