HANBIT HMF1M64F4V-90

HANBit
HMF1M64F4V
FLASH-ROM MODULE 8MByte (1M x 64-Bit) ,120PIN SMM,3.3V
Part No. HMF1M64F4V
GENERAL DESCRIPTION
The HMF1M64F4V is a high-speed flash read only memory (FROM) module containing 262,144 words organized in an
x64bit configuration. The module consists of four 1M x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible
FEATURES
w Access time : 80, 90, 120ns
w High-density 8MByte design
w High-reliability, low-power design
w Single + 3V ± 0.3V power supply
w Easy memory expansion
w Hardware reset pin(RESET#)
w FR4-PCB design
w 120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2
w Minimum 1,000,000 write cycle guarantee per sector
w 20-year data retention at 125 oC
w Flexible sector architecture
w Embedded algorithms
w Erase suspend / Erase resume
OPTIONS
MARKING
w Timing
80ns access
-80
90ns access
-90
120ns access
-120
w Packages
120-pin SMM
URL : www.hbe.co.kr
REV.02(August,2002)
F
1
HANbit Electronics Co., Ltd.
HANBit
HMF1M64F4V
PIN ASSIGNMENT
P1
P2
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
1
VCC
31
VSS
1
VCC
31
VSS
2
DQ32
32
DQ0
2
DQ16
32
DQ48
3
DQ33
33
DQ1
3
DQ17
33
DQ49
4
DQ34
34
DQ2
4
DQ18
34
DQ50
5
DQ35
35
DQ3
5
DQ19
35
DQ51
6
DQ36
36
DQ4
6
DQ20
36
DQ52
7
DQ37
37
DQ5
7
DQ21
37
DQ53
8
DQ38
38
DQ6
8
DQ22
38
DQ54
9
DQ39
39
DQ7
9
DQ23
39
DQ55
10
VCC
40
VSS
10
VCC
40
VSS
11
DQ40
41
DQ8
11
DQ24
41
DQ56
12
DQ41
42
DQ9
12
DQ25
42
DQ57
13
DQ42
43
DQ10
13
DQ26
43
DQ58
14
DQ43
44
DQ11
14
DQ27
44
DQ59
15
DQ44
45
DQ12
15
DQ28
45
DQ60
16
DQ45
46
DQ13
16
DQ29
46
DQ61
17
DQ46
47
DQ14
17
DQ30
47
DQ62
18
DQ47
48
DQ15
18
DQ31
48
DQ63
19
VCC
49
VSS
19
VCC
49
VSS
20
A1
50
A10
20
A20
50
NC[BANK1*
]
21
A2
51
A11
21
A0
51
BANK0*
22
A3
52
A12
22
A16
52
VSS
23
A4
53
A13
23
WE1*
53
BYTE*
24
A5
54
A14
24
WE2*
54
WE3*
25
VCC
55
VSS
25
VCC
55
VSS
26
A6
56
A15
26
OE*
56
NC[WE4*]
27
A7
57
A17
27
RESET*
57
NC[WE5*]
28
A8
58
A18
28
WE0*
58
NC[WE6*]
29
A9
59
A19
29
RY_BY*
59
NC[WE7*]
30
VCC
60
VSS
30
VCC
60
VSS
URL : www.hbe.co.kr
REV.02(August,2002)
2
HANbit Electronics Co., Ltd.
HANBit
HMF1M64F4V
FUNCTIONAL BLOCK DIAGRAM
DQ0 – DQ63
A0 – A19
64
20
A(0-19)
DQ(0-15)
/WE0
/WE
/BYTE
/OE
U2
/CE
RY-BY
/Reset
A0-19
DQ(16-31)
/WE1
/WE
/BYTE
/OE
U3
/CE
RY-BY
/Reset
A(0-19)
DQ(32-47)
/WE2
/WE
/OE
/BYTE
/CE
U1
RY-BY
/Reset
A(0-19)
DQ(48-63)
/WE3
/WE
/OE
/OE
/BANK0
/CE
RY_/BY
RY-BY
/BYTE
U4
/Reset
/Reset
/BYTE
URL : www.hbe.co.kr
REV.02(August,2002)
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HANbit Electronics Co., Ltd.
HANBit
HMF1M64F4V
TRUTH TABLE
MODE
/OE
/CE
/WE
/RESET
DQ ( /BYTE=L )
POWER
STANDBY
X
H
X
Vcc±0.3V
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
H
HIGH-Z
ACTIVE
READ
L
L
H
H
DOUT
ACTIVE
WRITE or ERASE
X
L
L
H
DIN
ACTIVE
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to Vcc+0.5V
Voltage with respect to ground Vcc
VCC
-0.5V to +4.0V
Storage Temperature
TSTG
-65oC to +150oC
Voltage with respect to ground all other pins
Operating Temperature
TA
-40oC to +85oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at th ese or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
TYP.
MAX
Vcc for ± 10% device Supply Voltages
Vcc
2.7V
3.0
3.6V
Ground
VSS
0
0
0
DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNIT
Input Leakage Current
Vcc=Vcc max, V IN= GND to Vcc
IL1
-1.0
1.0
µA
Output Leakage Current
Vcc=Vcc max, V OUT= GND to Vcc
IL0
-1.0
1.0
µA
Output High Voltage
IOH = -2.0mA, Vcc = Vcc min
VOH
0.85x Vcc
-
V
Output Low Voltage
IOL = 4.0mA, Vcc =Vcc min
VOL
-
0.4
V
-
64
-
16
/CE = VIL,
5MHZ
ICC1
Vcc Active Read Current (1)
/OE = VIH,
1MHZ
mA
Vcc Active Write Current (2)
/CE = VIL, /OE=VIH
ICC2
-
120
mA
Vcc Standby Current (3)
/CE, /RESET=Vcc±0.3V
ICC3
-
20
µA
VLKO
2.3
2.5
V
Low Vcc Lock-Out Voltage
Notes:
1. The Icc current listed includes both the DC operating current and the frequent component (at 5MHz).
2. Icc active while embedded algorithm (program or erase) is in progress
3. Icc active while Embedded Erase or Embedded Program is in progress.
4. Not 100% tested
URL : www.hbe.co.kr
REV.02(August,2002)
4
HANbit Electronics Co., Ltd.
HANBit
HMF1M64F4V
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
Block Erase Time
-
Chip Erase Time
TYP.
MAX.
0.7
15
COMMENTS
sec
25
Excludes 00H programming
prior to erasure
sec
Word Programming Time
-
11
360
µs
Chip Programming Time
-
12
36
sec
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
CIN
PARAMETER
DESCRIPTION
TEST SETUP
MIN
MAX
UNIT
VIN = 0
-
7.5
pF
VOUT = 0
-
12
pF
VIN = 0
-
9
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes : Capacitance is periodically sampled and not 100% tested.
TEST SPECIFICATIONS
TEST CONDITION
VALUE
Output load
UNIT
1TTL gate
Input rise and fall times
5
ns
0 to 3
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input pulse levels
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
URL : www.hbe.co.kr
REV.02(August,2002)
5
HANbit Electronics Co., Ltd.
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HMF1M64F4V
AC CHARACTERISTICS
u Read Only Operations Characteristics
SPEED
PARAMETER
DESCRIPTION
- 80
MIN
-90
MAX
MAX
90
MIN
MAX
tRC
Read Cycle Time
tACC
Address Access time
80
90
120
ns
tCE
Chip Enable to Access time
80
90
120
ns
tOE
Output Enable time
30
35
50
ns
tDF
Chip Enable to Output High-Z
25
30
30
ns
tOEH
Output Enable Hold Time
Output Hold Time From Addresses,
/CE or /OE
tQH
80
MIN
UNIT
-120
120
ns
0
0
0
ns
0
0
0
ns
u Erase/Program Operations
Alternate /WE Controlled Writes
PARAMETER
DESCRIPTION
-80
-90
MIN
MAX
MIN
-120
MAX
MIN
MAX
tWC
Write Cycle Time (1)
80
-
90
-
120
-
ns
tAS
Address Setup Time
0
-
0
-
0
-
ns
tAH
Address Hold Time
45
-
45
-
50
-
ns
tDS
Data Setup Time
35
-
45
-
50
-
ns
tDH
Data Hold Time
0
-
0
-
0
-
ns
tOES
Output Enable Setup Time
0
-
0
-
0
-
ns
tGHWL
Read Recover Time Before Write
0
-
0
-
0
-
ns
tCS
/CE Setup Time
0
-
0
-
0
-
ns
tCH
/CE Hold Time
0
-
0
-
0
-
ns
tWP
Write Pulse Width
35
-
35
-
50
-
ns
tWPH
Write Pulse Width High
30
-
30
-
30
-
ns
tPGM
Programming Operation
tBERS
Sector Erase Operation (2)
0.7
-
0.7
-
0.7
tVCS
Vcc set up time
50
-
50
-
tRB
Write Recover Time Before RY_/BY
0
-
0
-
tRH
/RESET High Before Read
50
-
50
-
tRPD
/RESET Low to Standby Mode
20
-
20
-
tRP
/RESET Pulse Width
500
-
500
-
11
11
µs
11
-
sec
50
-
µs
0
-
ns
50
-
ns
20
-
µs
500
-
ns
Notes : : 1. Not 100% tested
2 . See the “Erase and Programming Performance” section for more information.
URL : www.hbe.co.kr
REV.02(August,2002)
6
HANbit Electronics Co., Ltd.
HANBit
HMF1M64F4V
u Erase/Program Operations
Alternate /CE Controlled Writes
- 80
PARAMETER
-90
-120
DESCRIPTION
MIN
MAX
MIN
MAX
MIN
MAX
tWC
Write Cycle Time(1)
80
-
90
-
120
-
ns
tAS
Address Setup Time
0
-
0
-
0
-
ns
tAH
Address Hold Time
45
-
45
-
50
-
ns
tDS
Data Setup Time
35
-
45
-
50
-
ns
tDH
Data Hold Time
0
-
0
-
0
-
ns
tOES
Output Enable Setup Time
0
-
0
-
0
-
ns
Read Recover Time Before Write
0
-
0
-
0
-
ns
tCS
/CE Setup Time
0
-
0
-
0
-
ns
tCH
/CE Hold Time
0
-
0
-
0
-
ns
tWP
Write Pulse Width
35
-
35
-
50
-
ns
tWPH
Write Pulse Width High
30
-
30
-
30
-
ns
tPGM
Programming Operation
tBERS
Sector Erase Operation (2)
tGHWL
11
0.7
11
-
0.7
µs
11
-
0.7
-
sec
Notes : 1. Not 100% tested
2 . This does not include the preprogramming time
u READ OPERATIONS TIMING
URL : www.hbe.co.kr
REV.02(August,2002)
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HANbit Electronics Co., Ltd.
HANBit
HMF1M64F4V
u RESET TIMING
u PROGRAM OPERATIONS TIMING
Alternate /WE Controlled Writes
URL : www.hbe.co.kr
REV.02(August,2002)
8
HANbit Electronics Co., Ltd.
HANBit
HMF1M64F4V
Alternate /CE Controlled Writes
u CHIP/BLOCK ERASE OPERATION TIMINGS
URL : www.hbe.co.kr
REV.02(August,2002)
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HANbit Electronics Co., Ltd.
HANBit
HMF1M64F4V
u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION
u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION
URL : www.hbe.co.kr
REV.02(August,2002)
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HANbit Electronics Co., Ltd.
HANBit
HMF1M64F4V
u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION
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REV.02(August,2002)
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HANBit
HMF1M64F4V
PACKAGE DIMENSIONS
URL : www.hbe.co.kr
REV.02(August,2002)
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HANBit
HMF1M64F4V
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF1M64F4V-80
8MByte
X 64
120 Pin-SMM
HMF1M64F4V-90
8MByte
X 64
HMF1M64F4V-120
8MByte
X 64
URL : www.hbe.co.kr
REV.02(August,2002)
Component
Vcc
SPEED
4EA
3.3V
80ns
120 Pin-SMM
4EA
3.3V
90ns
120 Pin-SMM
4EA
3.3V
120ns
13
Number
HANbit Electronics Co., Ltd.