HANBit HMF1M64F4VA FLASH-ROM MODULE 8MByte (1M x 64-Bit) ,120PIN SMM,3.3V Part No. HMF1M64F4VA GENERAL DESCRIPTION The HMF1M64F4VA is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in an x64bit configuration. The module consists of four 1M x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible FEATURES w Access time : 70, 90 and 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3V ± 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w 120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2 w Minimum 1,000,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume OPTIONS MARKING w Timing 70ns access -70 90ns access -90 120ns access -120 w Packages 120-pin SMM URL: :www.hbe.co.kr REV.02(August,2002) F 1 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA PIN ASSIGNMENT P1 P2 PIN Symbol PIN Symbol PIN Symbol PIN Symbol 1 Vcc 31 Vss 1 Vcc 31 Vss 2 DQ32 32 DQ0 2 DQ16 32 DQ48 3 DQ33 33 DQ1 3 DQ17 33 DQ49 4 DQ34 34 DQ2 4 DQ18 34 DQ50 5 DQ35 35 DQ3 5 DQ19 35 DQ51 6 DQ36 36 DQ4 6 DQ20 36 DQ52 7 DQ37 37 DQ5 7 DQ21 37 DQ53 8 DQ38 38 DQ6 8 DQ22 38 DQ54 9 DQ39 39 DQ7 9 DQ23 39 DQ55 10 Vcc 40 Vss 10 Vcc 40 Vss 11 DQ40 41 DQ8 11 DQ24 41 DQ56 12 DQ41 42 DQ9 12 DQ25 42 DQ57 13 DQ42 43 DQ10 13 DQ26 43 DQ58 14 DQ43 44 DQ11 14 DQ27 44 DQ59 15 DQ44 45 DQ12 15 DQ28 45 DQ60 16 DQ45 46 DQ13 16 DQ29 46 DQ61 17 DQ46 47 DQ14 17 DQ30 47 DQ62 18 DQ47 48 DQ15 18 DQ31 48 DQ63 19 Vcc 49 Vss 19 Vcc 49 Vss 20 A1 50 A10 20 A20 50 NC(/BANK1 ) 21 A2 51 A11 21 A0 51 /BANK0 22 A3 52 A12 22 A16 52 Vss 23 A4 53 A13 23 /WE1 53 /BYTE 24 A5 54 A14 24 /WE2 54 /WE3 25 Vcc 55 Vss 25 Vcc 55 Vss 26 A6 56 A15 26 /OE 56 NC 27 A7 57 A17 27 /RESET 57 NC 28 A8 58 A18 28 /WE0 58 NC 29 A9 59 A19 29 /RY_BY 59 NC 30 Vcc 60 Vss 30 Vcc 60 Vss URL: :www.hbe.co.kr REV.02(August,2002) 2 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA FUNCTIONAL BLOCK DIAGRAM DQ0 – DQ63 A0 – A19 64 20 A(0-19) DQ(0-15) /WE0 /WE /BYTE /OE U2 /CE RY-BY /Reset A0-19 DQ(16-31) /WE1 /WE /BYTE /OE U3 /CE RY-BY /Reset A(0-19) DQ(32-47) /WE /WE2 /OE /BYTE /CE U1 RY-BY /Reset A(0-19) DQ(48-63) /WE3 /WE /OE /OE /BANK0 /CE RY_/BY RY-BY /BYTE U4 /Reset /Reset /BYTE URL: :www.hbe.co.kr REV.02(August,2002) 3 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X Vcc± 0.3 X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Dout ACTIVE WRITE or ERASE H L L Din ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to +0.5V Voltage with respect to ground Vcc VCC -0.5V to +4.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55Oc to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ±5% device Supply Voltages VCC 3.0V 3.6V Vcc for ± 10% device Supply Voltages Vcc 2.7V 3.6V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) TEST CONDITIONS PARAMETER SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, V IN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min 0.85* VOH V VCC Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL Vcc Active Current for Read(1) Vcc Active Current for Program or Erase(2) /CE = VIL, /OE=VIH, ICC1 /CE = VIL, /OE=VIH Vcc Standby Current /CE= VIH Low Vcc Lock-Out Voltage 0.45 V 36 64 mA ICC2 80 120 mA ICC3 0.8 20 mA VLKO 2.3 2.5 V Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max URL: :www.hbe.co.kr REV.02(August,2002) 4 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. MAX. Sector Erase Time - 0.7 15 Sec Byte Programming Time - 9 300 µs Chip Programming Time - 18 54.8 Sec COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead Excludes system-level overhead CAPACITANCE PARAMETER SYMBOL PARAMETER DESCRIPTION CIN TEST SETUP TYP. MAX UNIT VIN = 0 24 30 pF VOUT = 0 34 48 pF VIN = 0 30 36 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC STANDARD TAVAV tRC Speed Options DESCRIPTION TEST SETUP Read Cycle Time UNIT 70R 80 -90 -120 Min 70 80 90 120 ns Max 70 80 90 120 ns Max 70 80 90 120 ns TAVQV tACC Address to Output Delay /CE = VIL /OE = VIL TELQV tCE Chip Enable to Output Delay /OE = VIL TGLQV tOE Chip Enable to Output Delay Max 30 30 35 50 ns TEHQZ tDF Chip Enable to Output High-Z Max 25 25 30 30 ns TGHQZ tDF Max 125 25 30 30 ns TAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First Min 0 0 0 0 ns Notes : Test Conditions Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF Input rise and fall times : 5 ns , In case of 55ns-5ns Input pulse levels : 0 .45V to 2.4V, In case of 55ns- 0.0V-3.0V Timing measurement reference level Input : 0.8V, Incase of 55ns-1.5V Output : 2.0V, In case of 55ns-1.5V URL: :www.hbe.co.kr REV.02(August,2002) 5 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA 3.3V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD 70R 80 -90 -120 TAVAV tWC Write Cycle Time Min 70 80 90 120 TAVWL tAS Address Setup Time Min TWLAX tAH Address Hold Time Min 45 45 45 50 ns TDVWH tDS Data Setup Time Min 35 35 45 50 ns TWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Read Recover Time Before Write Min 0 ns 0 ns ns TGHWL tGHWL TELWL tCS /CE Setup Time Min 0 ns TWHEH tCH /CE Hold Time Min 0 ns TWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 0.7 sec Vcc set up time Min 50 µs tVCS 35 35 45 50 ns Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: :www.hbe.co.kr REV.02(August,2002) 6 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS SPEED OPTION UNIT DESCRIPTION JEDEC STANDARD 70R 80 -90 -120 tAVAV tWC Write Cycle Time Min 70 80 90 120 tAVEL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 45 45 50 ns tDVEH tDS Data Setup Time Min 35 35 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 ns tWLEL tWS /WE Setup Time Min 0 ns tEHWH tWH /WE Hold Time Min 0 ns tELEH tCP /CE Pulse Width Min tEHEL tCPH /CE Pulse Width High Min 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 9 µs tWHWH2 tWHWH2 Sector Erase Operation (Note) Typ 0.7 sec 0 35 35 ns ns 45 50 ns Notes : This does not include the preprogramming time. URL: :www.hbe.co.kr REV.02(August,2002) 7 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA u READ OPERATIONS TIMING u RESET TIMING URL: :www.hbe.co.kr REV.02(August,2002) 8 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: :www.hbe.co.kr REV.02(August,2002) 9 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: :www.hbe.co.kr REV.02(August,2002) 10 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: :www.hbe.co.kr REV.02(August,2002) 11 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA PACKAGE DIMMENSIONS 1.30±0.10 mm URL: :www.hbe.co.kr REV.02(August,2002) 12 HANbit Electronics Co., Ltd. HANBit HMF1M64F4VA ORDERING INFORMATION Part Number Density Org. Package HMF1M64F4VA-70 8MByte 1M x 64 120 Pin-SMM HMF1M64F4VA-90 8MByte 1M x 64 HMF2M64F4VA-120 8MByte 1M x 64 URL: :www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 3.3V 70ns 120 Pin-SMM 4EA 3.3V 90ns 120 Pin-SMM 4EA 3.3V 120ns 13 Number HANbit Electronics Co., Ltd.