HANBIT HMF2M32F4V-120

HANBit
HMF2M32F4V
Flash-ROM Module 8MByte (2Mx32Bit), 80Pin-SMM, 3.3V Design
Part No. HMF2M32F4V
GENERAL DESCRIPTION
The HMF2M32F4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a
x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 80-pin stackable type, double - sided, FR4printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can ge t low-power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible.
FEATURES
PIN ASSIGNMENT
P1
w Part Identification
- HMF2M32F4V : Socket 5mm
w Access time: 70, 80, 90, 120ns
w High-density 8MByte design
w High-reliability, low-power design
w Single + 3.0V ± 0.5V power supply
w All in/outputs are LVTTL-compatible
w FR4-PCB design
w 80-pin Designed by
P2
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
1
Vcc
21
Vcc
1
Vcc
21
Vcc
2
NC
22
DQ15
2
DQ16
22
NC
3
NC
23
DQ7
3
DQ24
23
NC
4
NC
24
DQ14
4
DQ17
24
/BYTE
5
A20
25
DQ6
5
DQ25
25
/OE
6
/RY_BY
26
DQ13
6
DQ18
26
/CE
7
Vss
27
Vss
7
Vss
27
Vss
8
/RESET
28
DQ5
8
DQ26
28
A16
9
/WE
29
DQ12
9
DQ19
29
A0
10
A19
30
DQ4
10
DQ27
30
A18
11
A8
31
DQ11
11
DQ20
31
A17
12
A9
32
DQ3
12
DQ28
32
A7
13
A10
33
DQ10
13
DQ21
33
A6
14
Vss
34
Vss
14
Vss
34
Vss
15
A11
35
DQ2
15
DQ29
35
A5
16
A12
36
DQ9
16
DQ22
36
A4
17
A13
37
DQ1
17
DQ30
37
A3
18
A14
38
DQ8
18
DQ23
38
A2
19
A15
39
DQ0
19
DQ31
39
A1
20
Vcc
40
Vcc
20
Vcc
40
Vcc
40-pin Fine Pitch Connector (x 2EA)
w Minimum 1,000,000 write/erase cycle
w Sector erases architecture
OPTIONS
MARKING
w Timing
70ns access
-70
80ns access
-80
90ns access
-90
120ns access
-120
w Packages
80-pin SMM
www.hbe.co.kr
REV.02(August,2002).
F
1
HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
FUNCTIONAL BLOCK DIAGRAM
32
DQ0 - DQ31
A0 – A19
20
A0-19
/WE
/OE
DQ 0-15
U1
/CE
RY-BY
/Reset
A0-19
/WE
/OE
DQ 15-31
U2
/CE
/CE0
RY-BY
/Reset
A0-19
/WE
/OE
DQ 0-15
U3
/CE
RY-BY
/Reset
A0-19
/WE
/WE
/OE
/OE
/RY_BY
/RESET
REV.02(August,2002).
U4
/CE
RY-BY
/CE1
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DQ 15-31
/Reset
2
HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
TRUTH TABLE
MODE
/OE
/CE
/WE
/RESET
DQ ( /BYTE=L )
POWER
STANDBY
X
H
X
Vcc±0.3V
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
H
HIGH-Z
ACTIVE
READ
L
L
H
H
DOUT
ACTIVE
WRITE or ERASE
X
L
L
H
DIN
ACTIVE
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to Vcc+0.5V
Voltage with respect to ground Vcc
VCC
-0.5V to +4.0V
Storage Temperature
TSTG
-65oC to +150oC
Voltage with respect to ground all other pins
Operating Temperature
TA
-55oC to +125 oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
Vcc for ± 10% device Supply Voltages
Vcc
2.7V
Ground
VSS
0
TYP.
MAX
3.6V
0
0
DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNIT
Input Load Current
Vcc=Vcc max, V IN= GND to Vcc
IL1
±1.0
µA
Output Leakage Current
Vcc=Vcc max, V OUT= GND to Vcc
IL0
±1.0
µA
Output High Voltage
IOH = -2.0mA, Vcc = Vcc min
VOH
Output Low Voltage
IOL = 4.0mA, Vcc =Vcc min
VOL
/CE = VIL,
V
0.45
5MHZ
Vcc Active Read Current (1)
32
4
8
40
60
mA
60
mA
2.5
V
mA
1MHZ
Vcc Active Write Current (2)
/CE = VIL, /OE=VIH
ICC2
Vcc Standby Current
/CE, /RESET=Vcc±0.3V
ICC3
Low Vcc Lock-Out Voltage
V
18
ICC1
/OE = VIH,
Notes:
2.4
VLKO
2.3
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
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REV.02(August,2002).
3
HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Sector Erase Time
UNIT
TYP.
MAX.
0.7
15
-
Chip Erase Time
COMMENTS
sec
25
Excludes 00H programming
prior to erasure
sec
Byte Programming Time
-
9
300
µs
Chip Programming Time
-
18
54
sec
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
CIN
PARAMETER
DESCRIPTION
TEST SETUP
MIN
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes : Test conditions TA = 25o C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
Speed Options
DESCRIPTION
TEST SETUP
UNIT
JEDEC STANDARD
tAVAV
tRC
Read Cycle Time
-70R
-80
-90
-120
Min
70
80
90
120
ns
Max
70
80
90
120
ns
Max
70
80
90
120
ns
tAVQV
tACC
Address to Output Delay
/CE = V IL
/OE = VIL
tELQV
tCE
Chip Enable to Output Delay
/OE = VIL
tGLQV
tOE
Chip Enable to Output Delay
Max
30
30
35
35
ns
tEHQZ
tDF
Chip Enable to Output High-Z
Max
25
25
30
30
ns
tGHQZ
tDF
Max
25
25
30
30
ns
tAXQX
tQH
Output Enable to Output High-Z
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
Min
0
ns
TEST SPECIFICATIONS
TEST CONDITION
70R, 80
Output load
90, 120
UNIT
100
pF
1TTL gate
Output load capacitance,CL (Including jig capacitance)
30
Input rise and full times
5
ns
0.0-3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input pulse levels
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REV.02(August,2002).
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HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS
Speed Options
DESCRIPTION
UNIT
JEDEC
STANDARD
70R
80
90
120
tAVAV
tWC
Write Cycle Time
Min
70
80
90
12
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recover Time Before Write
Min
0
ns
0
ns
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
0.7
sec
Vcc set up time
Min
50
µs
tVCS
35
35
35
50
ns
Notes : 1 . This does not include the preprogramming time
2 . This timing is only for Sector Protect operations
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REV.02(August,2002).
5
HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER SYMBOLS
Speed Options
DESCRIPTION
UNIT
JEDEC
STANDARD
-70R
-80
-90
120
tAVAV
tWC
Write Cycle Time
Min
70
80
90
12
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recover Time Before Write
Min
0
ns
0
ns
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
0.7
sec
35
35
35
50
ns
Notes : 1. This does not include the preprogramming time
2 . This timing is only for Sector Protect operations
u READ OPERATIONS TIMING
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REV.02(August,2002).
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HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
u RESET TIMING
u PROGRAM OPERATIONS TIMING
Alternate /WE Controlled Writes
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REV.02(August,2002).
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HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
Alternate /CE Controlled Writes
u CHIP/BLOCK ERASE OPERATION TIMINGS
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REV.02(August,2002).
8
HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION
u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION
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REV.02(August,2002).
9
HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION
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REV.02(August,2002).
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HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
PACKAGE DIMENSIONS
<TOP VIEW>
<BOTTOM VIEW>
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REV.02(August,2002).
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HANBit Electronics Co., Ltd
HANBit
HMF2M32F4V
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF2M32F4V-70
8MByte
2Mx 32
80Pin -SMM
HMF2M32F4V-80
8MByte
2Mx 32
HMF2M32F4V-90
8MByte
HMF2M32F4V-120
8MByte
www.hbe.co.kr
REV.02(August,2002).
Component
Vcc
SPEED
4EA
3.3V
70ns
80Pin -SMM
4EA
3.3V
80ns
2Mx 32
80Pin -SMM
4EA
3.3V
90ns
2Mx 32
80Pin -SMM
4EA
3.3V
120ns
12
Number
HANBit Electronics Co., Ltd