HANBit HMF4M32B8VS FLASH-ROM MODULE 16MByte (4M x 32-Bit) ,72pin-SODIMM, 3.3V Part No. HMF4M32B8VS GENERAL DESCRIPTION The HMF4M32B8VS is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a x32bit configuration. The module consists of eight 2M x 8 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3.0V DC power supply. PIN ASSIGNMENT FEATURES w Access time : 90, 100 and 120ns PIN SYMBOL PIN SYMBOL PIN SYMBOL w High-density 16MByte design 1 Vss 25 DQ22 49 DQ8 w High-reliability, low-power design 2 DQ0 26 DQ7 50 DQ24 3 DQ16 27 DQ23 51 DQ9 4 DQ1 28 A7 52 DQ25 w Easy memory expansion 5 DQ17 29 A12 53 DQ10 w Hardware reset pin(RESET#) 6 DQ2 30 Vcc 54 DQ26 w FR4-PCB design 7 DQ18 31 A8 55 DQ11 8 DQ3 32 A9 56 DQ27 9 DQ19 33 /WE3 57 DQ12 w Single + 3V ± 0.3V power supply w Low profile 72-pin SODIMM w Minimum 100,000 write/erase cycle 10 Vcc 34 /WE2 58 DQ28 w Flexible sector architecture 11 A10 35 A13 59 Vcc w Embedded algorithms 12 A0 36 A14 60 DQ29 w Erase suspend / Erase resume 13 A1 37 A15 61 DQ13 14 A2 38 A16 62 DQ30 15 A3 39 Vss 63 DQ14 16 A4 40 /CE0 64 DQ31 17 A5 41 /CE2 65 DQ15 18 A6 42 /CE3 66 A19 19 A11 43 /CE1 67 VSS(PD1) 20 DQ4 44 /WE0 68 VSS(PD2) 21 DQ20 45 /WE1 69 VSS(PD3) 22 DQ5 46 A17 70 /RESET 23 DQ21 47 /OE 71 A20 24 DQ6 48 A18 72 Vss OPTIONS MARKING w Timing 90ns access -90 100ns access -100 120ns access -120 w Packages 72-pin SODIMM B 72-PIN SODIMM TOP VIEW URL: www.hbe.co.kr REV.02(August,2002) 1 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS FUNCTIONAL BLOCK DIAGRAM DQDQ 0-DQ31 0-31 A0-A20 A0-19 DQ32 A21 A0-20 A0-20 DQ0-7 /CE U1 /OE /WE /WE /WE0 A0-20 /OE U5 /OE /WE0 /CE DQ0-7 /CE A0-20 DQ8-15 DQ8-15 /CE U3 U7 /OE /WE /WE /WE1 /WE1 A0-20 A0-20 /CE /OE DQ16-23 U2 /WE /WE2 A0-20 A0-20 /CE0 /OE /CE /OE DQ24-31 /CE1 U4 /OE REV.02(August,2002) /CE /OE DQ24-31 U8 /WE /WE /WE3 URL: www.hbe.co.kr U6 /OE /WE /WE2 DQ16-23 /CE /WE3 2 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to +4.0V Voltage on Vcc Supply Relative to Vss VCC -0.5V to +4.0V Power Dissipation PD 8W TSTG -65oC to +150oC Voltage on Any Pin Relative to Vss Storage Temperature Operating Temperature TA -40oC to +85oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional o peration of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS PARAMETER SYMBOL MIN TYP. MAX Supply Voltage VCC 2.7V 3.0V 3.6V Ground VSS 0 0 0 Input High Voltage VIH 0.7xVCC - Vcc+0.3V Input Low Voltage VIL -0.5 - 0.8V DC CHARACTERISTICS (CMOS Compatible) PARAMETE DESCRIPTION TEST CONDITIONS MIN VIN=Vss to Vcc, Vcc=Vcc max -1.0 TYP MAX UNIT +1.0 uA 35 uA +1.0 uA R ILI Input Leakage Current A9 , /RESET Input ILIT Vcc= Vcc max ; A9,/RESET=12.5V Leakage Current ILO Output Leakage Current URL: www.hbe.co.kr REV.02(August,2002) VOUT= Vss to Vcc, Vcc= Vcc max 3 -1.0 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS Vcc Active Read Current /CE=VIL, /OE=VIL 5MHZ 16 (Note1) All Outputs open 1MHZ 4 ICC1 mA Vcc Active Write Current ICC2 /CE=VIL, /OE=VIH 30 mA Vcc=Vcc max ; /CE,Reset=Vcc±0.3V 5 uA Vcc=Vcc max ; /Reset=Vcc±0.3V 5 uA 5 uA (Note 2 and 4) ICC3 Vcc Standby Current Vcc Standby Current ICC4 During Reset Automatic Sleep VIH=Vcc±0.3V; Mode(Note3) VIL=Vss±0.3V ICC5 VIL Input Low Voltage -0.5 0.8 V VIH Input High Voltage 0.7xVcc Vcc+0.3 V 11.5 12.5 V 0.4 V Voltage for Autoselect VID Vcc=3.3V and Temporary Unprotect VOL Output Low Voltage VOH1 IOL=4.0mA, Vcc=Vcc min IOH=-2.0mA, Vcc=Vcc min 0.85xVcc V IOH=-100uA, Vcc= Vcc min Vcc-0.4 V 1.5 V Output High Voltage VOH2 Low Vcc Lock-Out VLKO Voltage Notes : 1. 2. 3. The Icc current listed includes both the DC operating current ane the frequency dependent component(at 5 MHz). The read current is typically 9mA (@VCC=3.0V. /OE at V1H ) Icc active while Embedded Erase or Embedded Program is progress. Automatic sleep mode enables the low power mode when adder sses remain stable for t ACC+30ns. Typical sleep mode current is 200nA. 4. Not 100% tested. ERASE AND PROGRAMMING PERFORMANCE PARAMETER TYP MAX UNIT COMMENTS Block Erase Time 0.7 15 sec Excludes 00h programming prior to Chip Erase Time 27 sec erasure Byte Programming Time 9 270 us Word Programming Time 11 330 us Byte Mode 18 54 sec Word Mode 12 36 sec Chip Programming Time Excludes system level overhead Notes : O 1. 25 C, Vcc=3.0V, 100,000 cycles, typical pattern. 2. System-level overhead is defined as the time required to excute the four-bus-cycle command necessary to program each byte. In the preprogramming step of the internal Erase Routine, all bytes ar e programmed to 00H before erasure. URL: www.hbe.co.kr REV.02(August,2002) 4 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS CAPACITANCE PARAMETER PARAMETER SYMBOL DESCRIPTION TEST SETUP CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance MIN MAX UNIT VIN = 0V 10 pF VOUT = 0V 10 pF VIN = 0V 10 pF Notes : 1. Sampled, not 100% tested o 2. Test conditions TA = 25 C, f=1.0 MHz, VCC=3.3V. TEST SPECIFICATIONS TEST CONDITION VALUE Output load UNIT 1TTL gate and CL=100pF Input rise and full times 5 ns 0.0 - 3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels 3.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance URL: www.hbe.co.kr REV.02(August,2002) 5 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS AC CHARACTERISTICS u Erase / Program Operations PARAMETER SYMBOLS CL=100pF DESCRIPTION JEDEC -90 -100 -120 UNIT STANDARD Min Max Min Max Min Max tAVAV tWC Write Cycle Time 90 100 120 ns tAVWL tAS Address Setup Time 0 0 0 ns tWLAX tAH Address Hold Time 45 45 50 ns tDVWH tDS Data Setup Time 45 45 50 ns tWHDX tDH Data Hold Time 0 0 0 ns tOES Output Enable Setup Time 0 0 0 ns Read Recover Time Before Write 0 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time 0 0 0 ns tWHEH tCH /CE Hold Time 0 0 0 ns tWLWH tWP Write Pulse Width 45 45 50 ns tWHWL tWPH Write Pulse Width High 30 30 30 ns tWHWH1 tWHWH1 Byte Programming Operation 9 9 9 µs tWHWH2 tBERS Block Erase Operation 0.7 0.7 0.7 sec tVCS Vcc Setup Time 50 50 50 µs tRB Recovery time from RY/BY 0 0 0 ns Program/Erase Valid to RY/BY Delay 90 90 90 ns tBUSY Note: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information u Alternate /CE Controlled Erase/ Program Operations CL=100pF PARAMETER SYMBOLS DESCRIPTION -90 STANDARD tAVAV tWC Write Cycle Time 90 100 120 ns tAVEL tAS Address Setup Time 0 0 0 ns tELAX tAH Address Hold Time 45 45 50 ns tDVEH tDS Data Setup Time 45 45 50 ns tEHDX tDH Data Hold Time 0 0 0 ns tOES Output Enable Setup Time 0 0 0 ns tGHEL tGHEL Read Recover Time Before Write 0 0 0 ns tWLEL tWS /OE High to /WE Low 0 0 0 ns tEHWH tWH /WE Hold Time 0 0 0 ns REV.02(August,2002) 6 Max Min Max UNIT -120 JEDEC URL: www.hbe.co.kr Min -100 Min Max HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS tELEH tCP /CE Pulse Width 45 45 50 ns tEHEL tCPH /CE Pulse Width High 30 30 30 ns tBUSY Program/Erase Valid RY//BY Delay 90 90 90 ns Recovery Time from RY//BY 0 0 0 ns tRB Note: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information . URL: www.hbe.co.kr REV.02(August,2002) 7 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS u READ OPERATIONS TIMING u RESET TIMING u PROGRAM OPERATIONS TIMING URL: www.hbe.co.kr REV.02(August,2002) 8 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS u CHIP/SECTOR ERASE OPERATION TIMINGS u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM URL: www.hbe.co.kr REV.02(August,2002) 10 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 11 HANbit Electronics Co., Ltd. HANBit HMF4M32B8VS PACKAGE DIMENSIONS 3.2 mm MAX 2.55 mm MIN 0.25 mm MAX 0.8 mm 1.0 ± 0.1mm 0.60±0.05 mm (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. HMF4M32B8VS-90 16MByte x 32 HMF4M32B8VS-100 16MByte x 32 HMF4M32B8VS-120 16MByte x 32 URL: www.hbe.co.kr REV.02(August,2002) Package 72 PinSODIMM 72 PinSODIMM 72 PinSODIMM 12 Component Vcc SPEED 8EA 3.3V 90ns 8EA 3.3V 100ns 8EA 3.3V 120ns Number HANbit Electronics Co., Ltd.