HANBit HMF8M8F4VS FLASH-ROM MODULE 8MByte (8M x 8-Bit) , SMM 80Pin Part No. HMF8M8F4VS GENERAL DESCRIPTION The HMF8M8F4VS is a high-speed flash read only memory (FROM) module containing 8,388,608 bytes organized in an x8bit configuration. The module consists of four 2M x 8 FROM mounted on a 80-pin, SMM connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTLcompatible. PIN ASSIGNMENT FEATURES w Part identification P1 HMF8M8F4VS(Bottom boot block configuration) P2 PIN Symbol PIN Symbol PIN Symbol PIN Symbol w High-density 8MByte design 1 Vcc 21 Vcc 1 Vcc 21 Vcc w High-reliability, low-power design 2 A20 22 NC 2 /CE1 22 NC w Single + 3V to 3.6V power supply 3 NC 23 DQ7 3 /CE2 23 NC w 80-Pin Designed 4 NC 24 NC 4 /CE3 24 NC 5 NC 25 DQ6 5 NC(/CE4) 25 /OE 6 /RY_BY 26 NC 6 NC(/CE5) 26 /CE0 w 10-year data retention at 85 oC 7 Vss 27 Vss 7 Vss 27 Vss w Flexible sector architecture 8 /RESET 28 DQ5 8 NC(/CE6) 28 A16 w Embedded algorithms 9 /WE 29 NC 9 NC(/CE7) 29 A0 10 A19 30 DQ4 10 NC 30 A18 11 A8 31 NC 11 NC 31 A17 12 A9 32 DQ3 12 NC 32 A7 13 A10 33 NC 13 NC 33 A6 14 Vss 34 Vss 14 Vss 34 Vss 15 A11 35 DQ2 15 NC 35 A5 16 A12 36 NC 16 NC 36 A4 17 A13 37 DQ1 17 NC 37 A3 18 A14 38 NC 18 NC 38 A2 19 A15 39 DQ0 19 NC 39 A1 20 Vcc 40 Vcc 20 Vcc 40 Vcc w Access time: 90, 100, 120ns 40-Pin, 0.8mm Fine Pitch Connector P1,P2 w Minimum 100,000 write cycle guarantee per sector w Erase suspend / Erase resume OPTIONS MARKING w Timing 90ns access - 90 100ns access -100 120ns access -120 w Packages SMM 80-pin URL: www.hbe.co.kr REV.02(August,2002) F 1 HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS FUNCTIONAL BLOCK DIAGRAM A(0 : 20) DQ(0 :7) A(0:20) DQ(0:7) /CE0 /CE /OE /WE /Reset /RY-BY U4 A(0:20) DQ(0:7) /CE1 /CE /OE /WE /Reset /RY-BY U3 A(0:20) DQ(0:7) /CE2 /CE /OE /WE /Reset /RY-BY U2 A(0:20) DQ(0:7) /CE3 /OE /WE /RESET /RY_BY /CE /OE /WE /Reset /RY-BY U1 PIN DESCRIPTION PIN A0 – A20 DQ0 – DQ31 /CE0-/CE3 FUNCTION Address Inputs Word / Byte selection Vcc Power (+3V) Chip Enable Vss Ground Output Enable /WE Read/Write Enable /RESET Hardware Reset Pin REV.02(August,2002) /BYTE FUNCTION Data Input/Output /OE URL: www.hbe.co.kr PIN /RY_BY NC 2 Ready/Busy output No Connection HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS TRUTH TABLE MODE /CS /OE /WE RESET DQ Vcc±0.3V X X Vcc±0.3V HIGH-Z RESET X X X L HIGH-Z SECTOR PROTECT L H L VID DIN, DOUT SECTOR UNPROTECT L H L VID DIN, DOUT READ L L H H DOUT WRITE L H L H DOUT STANDBY Note : X means don't care, WE0* Low byte (D0~7) Write enable, WE1* High byte(D8~15) Write enable. ABSOLUTE MAXIMUM RATINGS PARAMETER RATING Voltage on Any Pin Relative to Vss -0.5V to Vcc +0.5V Voltage on Vcc Supply Relative to Vss -0.5V to +4.0V Output Short Circuit Current 1,600mA -65oC to +150oC Storage Temperature -0oC to +70oC Operating Temperature w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED OPERATING CONDITIONS RANGE PARAMETER Vcc for regulated Supply Voltage +2.0V to 3.6V Vcc for full voltage +2.7V to 3.6V DC AND OPERATING CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current VIN= VSS to VCC , VCC= VCC max IL1 -4.0 +4.0 µA Output Leakage Current VOUT= VSS to VCC, VCC= VCC max IL0 -4.0 +4.0 µA Output High Voltage IOH = -2.0mA, Vcc = Vcc min VOH 0.85xVcc Output Low Voltage IOL = 4.0mA, Vcc = Vcc min VOL 0.4 V Vcc Active Read Current /CE = VIL, ,/OE=VIL, f=5MHz ICC1 64 mA Vcc Active Write Current /CE = VIL, /OE=VIH ICC2 180 mA Vcc Standby Current /CE, RESET=VCC±0.3V ICC3 20 µA Vcc Reset Current /RESET=Vss±0.3V, ICC4 20 µA URL: www.hbe.co.kr REV.02(August,2002) 3 V HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS Low Vcc Lock-Out Voltage VLKO 1.5 V ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. MAX. 0.7 15 COMMENTS Excludes 00H programming Block Erase Time - Sec prior to erasure Byte Programming Time - 9 Excludes system-level µS 270 overhead Excludes system-level Chip Programming Time - 18 54 sec overhead CAPACITANCE PARAMETER PARAMETER TEST SETUP SYMBOL MIN. MAX UNIT DESCRIPTION CIN Input Capacitance VIN = 0 10 pF COUT Output Capacitance VOUT = 0 10 pF CIN2 Control Pin Capacitance VIN = 0 10 pF Notes: Test conditions TA = 25o C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER CL=100pF SYMBOLS DESCRIPTION UNIT -90 JEDEC -100 -120 STANDARD Min Max 90 Min Max 100 Min Max tAVAV tRC Read Cycle Time 120 ns tELQV tCE Chip Enable to Output Delay 90 100 120 ns tGLQV tOE Chip Enable to Output Delay 35 40 50 ns tEHQZ tDF Chip Enable to Output High-Z 30 30 30 ns tAXQX tQH Output Hold Time From Addresses, 0 0 0 ns /CE or /OE, Whichever Occurs First URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS TEST CONDITIONS TEST CONDITION VALUE UNIT Output load 1TTL gate Input rise and full times 5 ns 0.0 - 3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels 3.3V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS CL=100pF DESCRIPTION JEDEC -90 -100 -120 UNIT STANDARD Min Max Min Max Min Max tAVAV tWC Write Cycle Time 90 100 120 ns tAVWL tAS Address Setup Time 0 0 0 ns tWLAX tAH Address Hold Time 45 45 50 ns tDVWH tDS Data Setup Time 45 45 50 ns tWHDX tDH Data Hold Time 0 0 0 ns tOES Output Enable Setup Time 0 0 0 ns Read Recover Time Before Write 0 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time 0 0 0 ns tWHEH tCH /CE Hold Time 0 0 0 ns tWLWH tWP Write Pulse Width 45 45 50 ns tWHWL tWPH Write Pulse Width High 30 30 30 ns URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS 9 9 9 µs Block Erase Operation 0.7 0.7 0.7 sec tVCS Vcc Setup Time 50 50 50 µs tRB Recovery time from RY/BY 0 0 0 ns Program/Erase Valid to RY/BY Delay 90 90 90 ns tWHWH1 tWHWH1 tWHWH2 tBERS tBUSY Byte Programming Operation u Alternate /CE Controlled Erase/Program Operations PARAMETER SYMBOLS CL=100pF DESCRIPTION -90 STANDARD tAVAV tWC Write Cycle Time 90 100 120 ns tAVEL tAS Address Setup Time 0 0 0 ns tELAX tAH Address Hold Time 45 45 50 ns tDVEH tDS Data Setup Time 45 45 50 ns tEHDX tDH Data Hold Time 0 0 0 ns tOES Output Enable Setup Time 0 0 0 ns tGHEL tGHEL Read Recover Time Before Write 0 0 0 ns tWLEL tWS /OE High to /WE Low 0 0 0 ns tEHWH tWH /WE Hold Time 0 0 0 ns tELEH tCP /CE Pulse Width 45 45 50 ns tEHEL tCPH /CE Pulse Width High 30 30 30 ns tBUSY Program/Erase Valid RY//BY Delay 90 90 90 ns Recovery Time from RY//BY 0 0 0 ns URL: www.hbe.co.kr REV.02(August,2002) 6 Max Min Max UNIT -120 JEDEC tRB Min -100 Min Max HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS TIMING DIAGRAMS Notes : 1. DQ7 is the output of the complement of the data written to the device. 2. DOUT is the output of the data written to the device. 3. PA : Program Address, PD : Program Data URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS 4. The illustration shows the last two cycles of the program command sequence. Notes : 1. DQ7 is the output of the complement of the data written to the device. 2. DOUT is the output of the data written to the device. 3. PA : Program Address, PD : Program Data 4. The illustration shows the last two cycles of the program command sequence. URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit URL: www.hbe.co.kr REV.02(August,2002) HMF8M8F4VS 9 HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS PACKAGE DIMENSIONS UNIT: mm Front-Side Rear-Side URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF8M8F4VS ORDERING INFORMATION Part Number Density Org. Package HMF8M8F4VS-90 8MByte 8M x 8 80Pin -SMM HMF8M8F4VS-100 8MByte 8M x 8 HMF8M8F4VS-120 8MByte 8M x 8 URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 4EA 3.3V 90ns 80Pin -SMM 4EA 3.3V 100ns 80Pin -SMM 4EA 3.3V 120ns 11 Number HANBit Electronics Co., Ltd.