HANBIT HMF8M32M8V

HANBit
HMF8M32M8V
Flash-ROM Module 32MByte (8Mx32Bit), 72Pin-SIMM, 3.3V Design
Part No. HMF8M32M8V
GENERAL DESCRIPTION
The HMF8M32M8V is a high-speed flash read only memory (FROM) module containing 16,777,216 words organized in a
x32bit configuration. The module consists of eight 4M x 8bit FROM mounted on a 72-pin, double -sided, FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, ,(/CE_1L, /CE_1H, /CE_2L, /CE_2H) are used to enable the module’s 16 bits independently. Output
enable (/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are TTLcompatible.
PIN ASSIGNMENT
FEATURES
PIN
Symbol
PIN
Symbol
PIN
Symbol
1
Vss
25
DQ17
49
/WE
2
/RESET
26
DQ18
50
A18
w High-reliability, low-power design
3
DQ0
27
DQ19
51
A17
w Single + 3.3V ± 0.3V power supply
4
DQ1
28
DQ20
52
A16
5
DQ2
29
DQ21
53
A15
6
DQ3
30
Vcc
54
A14
w Access time : 90, 120ns
w High-density 32MByte design
w Easy memory expansion
w All inputs and outputs are TTL-compatible
7
DQ4
31
DQ22
55
A13
w FR4-PCB design
8
DQ5
32
DQ23
56
A12
w Low profile 72-pin SIMM
9
DQ6
33
/CE_1H
57
A11
w Minimum 1,000,000 write/erase cycle
10
Vcc
34
/CE_2H
58
A10
w Sectors erase architecture
11
DQ7
35
DQ24
59
Vcc
w Sector group protection
12
/CE_1L
36
DQ25
60
A9
13
/CE_2L
37
DQ26
61
A8
14
DQ8
38
DQ27
62
A7
15
DQ9
39
Vss
63
A6
16
DQ10
40
DQ28
64
A5
17
DQ11
41
DQ29
65
A4
DQ12
42
DQ30
66
A3
w Temporary sector group unprotection
OPTIONS
MARKING
w Timing
90ns access
-90
18
120ns access
-120
19
DQ13
43
DQ31
67
A2
20
DQ14
44
NC
68
A1
21
DQ15
45
NC
69
A0
22
NC
46
Vcc
70
A20
23
NC
47
A19
71
A21
24
DQ16
48
/OE
72
Vss
w Packages
72-pin SIMM
URL:www.hbe.co.kr
REV.02(August,2002)
M
1
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A1 – A21
A0
/CE_1L
32
21
A0-20
DQ15/A-1
A0-20
DQ15/A-1
/CE
/OE
/OE
/WE
RY-BY
/WE
U1
/CE_1H
A0-20
DQ15/A-1
/CE
DQ 8-15
A0-20
/OE
/OE
/WE
RY-BY
/WE
RY-BY
U2
/WE
/RESET
URL:www.hbe.co.kr
REV.02(August,2002)
U6
A0-20
DQ15/A-1
DQ16-23
DQ16-23
/OE
/OE
/WE
/WE
RY-BY
U3
/CE
/CE_2H
/CE
U7
/RESET
A0-20
DQ15/A-1
DQ24-31
/OE
/OE
/WE
/WE
RY-BY
RY-BY
/RESET
/CE_2L
/CE
A0-20
DQ15/A-1
A0-20
DQ15/A-1
/OE
DQ 8-15
/RESET
RY-BY
/RESET
/CE_1H
DQ15/A-1
/RESET
/CE
/CE_2L
U5
RY-BY
/RESET
/RESET
/CE_1L
DQ 0-7
/CE
DQ 0-7
U4
DQ24-31
/CE
/CE_2H
U8
/RESET
2
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
TRUTH TABLE
MODE
/OE
/CE
/WE
/RESET
DQ ( /BYTE=L )
POWER
STANDBY
X
H
X
Vcc±0.3V
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
H
HIGH-Z
ACTIVE
READ
L
L
H
H
DOUT
ACTIVE
WRITE or ERASE
X
L
L
H
DIN
ACTIVE
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to Vcc+0.5V
Voltage with respect to ground Vcc
VCC
-0.5V to +4.0V
Power dissipation
PD
8W
TSTG
-65oC to +150oC
Voltage with respect to ground all other pins
Storage Temperature
Operating Temperature
TA
0oC to + 70oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
Vcc for ± 10% device Supply Voltages
Vcc
2.7V
Ground
VSS
0
TYP.
MAX
3.6V
0
0
DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
IL1
±1.0
µA
IL0
±1.0
µA
Vcc=Vcc max, VIN= VSS to
Input Load Current
Vcc
Vcc=Vcc max, VOUT= VSS to
Output Leakage Current
Vcc
Output High Voltage
IOH = -2.0mA, Vcc = Vcc min
VOH
Output Low Voltage
IOL = 4.0mA, Vcc =Vcc min
VOL
/CE = VIL,
0.85 Vcc
V
0.45
5MHZ
80
128
16
32
ICC1
Vcc Active Read Current (1)
/OE = VIH,
V
mA
1MHZ
Vcc Active Write Current (2)
/CE = VIL, /OE=VIH
ICC2
120
240
mA
Vcc Standby Current
/CE, /RESET=Vcc±0.3V
ICC3
1.6
40.0
µA
2.5
V
Low Vcc Lock-Out Voltage
Notes:
VLKO
2.3
1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
2. Icc active while embedded algorithm (program or erase) is in progress
URL:www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
3. Maximum Icc current specifications are tested with Vcc=Vcc max
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
Sector Erase Time
TYP.
MAX.
0.7
15
-
Chip Erase Time
COMMENTS
sec
49
Excludes 00H programming
prior to erasure
sec
Byte Programming Time
-
9
300
µs
Chip Programming Time
-
36
108
sec
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
DESCRIPTION
PARAMETER
SYMBOL
CIN
TEST SETUP
TYP.
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
o
Notes : Test conditions TA = 25 C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
Speed Options
DESCRIPTION
TEST SETUP
UNIT
JEDEC STANDARD
tAVAV
tRC
Read Cycle Time
-90
-120
Min
90
120
ns
Max
90
120
ns
Max
90
120
ns
tAVQV
tACC
Address to Output Delay
/CE = VIL
/OE = VIL
tELQV
tCE
Chip Enable to Output Delay
/OE = VIL
tGLQV
tOE
Output Enable to Output Delay
Max
35
50
ns
tEHQZ
tDF
Chip Enable to Output High-Z
Max
30
30
ns
tGHQZ
tDF
Max
30
30
ns
tAXQX
tQH
Output Enable to Output High-Z
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
Min
0
ns
TEST SPECIFICATIONS
TEST CONDITION
90
Output load
120
UNIT
100
pF
1TTL gate
Output load capacitance,CL (Including jig capacitance)
30
Input rise and fall times
5
ns
0.0-3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input pulse levels
URL:www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
3.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS
Speed Options
DESCRIPTION
UNIT
JEDEC
STANDARD
90
120
tAVAV
tWC
Write Cycle Time
Min
90
120
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
50
ns
tDVWH
tDS
Data Setup Time
Min
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recovery Time Before Write
Min
0
ns
0
ns
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
0.7
sec
Vcc set up time
Min
50
µs
tVCS
35
50
ns
Notes : 1 . This does not include the preprogramming time
2 . This timing is only for Sector Protect operations
u Erase/Program Operations
URL:www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
Alternate /CE Controlled Writes
PARAMETER SYMBOLS
Speed Options
DESCRIPTION
UNIT
JEDEC
STANDARD
-90
120
tAVAV
tWC
Write Cycle Time
Min
90
120
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
50
ns
tDVWH
tDS
Data Setup Time
Min
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recovery Time Before Write
Min
0
ns
0
ns
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
0.7
sec
35
50
ns
Notes : 1. This does not include the preprogramming time
2 . This timing is only for Sector Protect operations
URL:www.hbe.co.kr
REV.02(August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
u READ OPERATIONS TIMING
u RESET TIMING
URL:www.hbe.co.kr
REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
URL:www.hbe.co.kr
REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
URL:www.hbe.co.kr
REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL:www.hbe.co.kr
REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF8M32M8V
PACKAGE DIMENSIONS
(UNIT : mm)
2.54 mm
MIN
0.25 mm MAX
1.27±0.08 mm
Gold: 1.04±0.10 mm
Solder: 0.914±0.10 mm
1.27
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF8M32M8V-90
32MByte
8Mx 32bit
72Pin -SIMM
HMF8M32M8V-120
32MByte
8Mx 32bit
72Pin -SIMM
URL:www.hbe.co.kr
REV.02(August,2002)
11
Component
Vcc
SPEED
8EA
3.3V
90ns
8EA
3.3V
120ns
Number
HANBit Electronics Co., Ltd.