Hebei I.T. (Shanghai) Co., Ltd. LED SPECIFICATION Part No.：510E850C Ø Features： l Single color l High Power output l Low power consumption l High reliability and long life Ø Descriptions： l Dice material：AlGaAs l Emitting Color：Infrared Emitting diodes l Device Outline：φ5mm Round Type l Lens Type：Black Transparent Note： ● All dimensions are millimeters. ● Tolerance is +/-0.25mmunless otherivise noted Ø Directivity: Relative Luminous Intensity DIRECTIVITY 0° 1.0 Ta=25° C IF=20mA 30° 60° 0.5 0 90° 60° 30° 0° 0.5 90° 1.0 Radiation Angle www.ledz.com 1/3 Hebei I.T. (Shanghai) Co., Ltd. LED SPECIFICATION Part No.：510E850C Ø Absolute maximum ratings（Ta = 25℃） Characteristics Parameter Symbol Test Conditions Unit Min. Max. Power Dissipation Pd —— —— 100 mW Reverse Voltage VR IR=10μA 9 —— V Forward Current IFM Duty=0.01mS 1kHz —— 1000 mA Operating Temperature Range Topr —— -40 +85 ℃ Storage Temperature Range Tstr —— -40 +100 ℃ Soldering Temperature Tsd 260 ℃ t≤5sec,2mm from case —— Ø Electrical and optical characteristics （Ta = 25℃） Value Parameter Symbol Test Condition Unit Min. Typ. Max. Forward Voltage VF IF = 50mA ---- 1.55 1.8 V Reverse Current IR VR = 9V ---- ---- 10 μA Peak Wavelength λp IF = 50mA ---- 850 ---- nm Spectrum Width of Half Value Δλ IF = 50mA —— 45 —— nm Ie IF=50mA —— 160 —— mW/Sr 2θ1/2 IF = 50mA ---- 13 ---- Deg. Radiant Intensity Viewing Angle www.ledz.com 2/3 Hebei I.T. (Shanghai) Co., Ltd. LED SPECIFICATION Part No.：510E850C Ø Typical electrical/optical characteristic curves： 2.5 Radiant Intensity(mW/sr) Relative Value at IF=50mA Forward Current(mA) 100 80 60 40 20 0 1.3 1.4 1.5 1.6 1.7 Forward Voltage(V) 1.5 1.0 0.5 0 1.8 0 20 40 60 80 IF-Forward Current (mA) 100 2.5 100 2.0 Radiant Intensity Forward Current(mA) 2.0 80 60 40 20 0 1.5 1.0 0.5 0 20 40 60 80 100 0 -40 -20 Relative Luminous Intensity Ambient Temperature T A (℃) 0 20 40 60 80 Ambient Temperature T A (℃) 100 75 50 25 0 500 600 700 800 900 Wavelength λ(nm) 1000 1100 www.ledz.com 3/3 100