MICROWAVE CORPORATION HMC268LM1 v03.1201 SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz AMPLIFIERS - SMT 1 Typical Applications Features The HMC268LM1 LNA enables economical PCB SMT assembly for: SMT mmWave Package • Millimeterwave Point-to-Point Radios 15 dB Gain • LMDS P1dB Output Power: +13 dBm Excellent Noise Figure: 2.6 dB • SATCOM Functional Diagram General Description The HMC268LM1 is a two stage GaAs MMIC Low Noise Amplifier (LNA) in a SMT leadless chip carrier package covering 20 to 32 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match, preserving MMIC chip performance. Utilizing a GaAs PHEMT process the device offers 2.6 dB noise figure, 15 dB gain and +13 dBm output power from a bias supply of +4V @ 45 mA. As an alternative to chip-and-wire hybrid assemblies the HMC268LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. All data is with the non-hermetic, epoxy sealed LM1 packaged LNA device mounted in a 50 ohm test fixture. Electrical Specifications, TA = +25° C, Vdd= +4V* Parameter Min. Frequency Range** Gain Typ. Max. Min. 20 - 26 11 Noise Figure Typ. Max. Min. 26 - 30 14 17 2.5 3.2 13 Typ. Max. 30 - 32 15 18 2.6 3.4 12 GHz 15 18 dB 2.8 3.8 dB Input Return Loss 8 7 7 dB Output Return Loss 12 8 7 dB Reverse Isolation 26 33 23 28 23 28 dB Output Power for 1 dB Compression (P1dB) 7 11 9 13 9 13 dBm S a t u r a t e d O u t p u t Po w e r ( P s a t ) 13 16 14 17 15 18 dBm Output Third Order Intercept (IP3) 13 22 17 22 15 21 dBm Supply Current (I d d) 45 50 45 50 45 * Vdd = +4V, adjust Vgg1 & Vgg2 between -2.0 to 0.0 Vdc to achieve ldd = 45 mA. ** Acceptable gain and NF performance is achievable down to 17 GHz. 1 - 30 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 50 mA HMC268LM1 v03.1201 MICROWAVE CORPORATION SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz GaAs Gain MMIC SUB-HARMONICALLY PUMPED Broadband & Return Loss Gain 20 MIXER 17 - 25 GHz 20 1 15 0 -5 10 -10 5 -15 -20 -25 0 10 15 20 25 30 35 15 20 FREQUENCY (GHz) Isolation 35 30 35 30 35 0 INPUT RETURN LOSS (dB) REVERSE ISOLATION (dB) 30 Input Return Loss 0 -10 -20 -30 -40 -50 -5 -10 -15 -20 15 20 25 30 15 35 20 FREQUENCY (GHz) 25 FREQUENCY (GHz) Noise Figure Output Return Loss 0 OUTPUT RETURN LOSS (dB) 5 +85 C 4 NOISE FIGURE (dB) 25 FREQUENCY (GHz) AMPLIFIERS - SMT 15 S21 S11 S22 5 GAIN (dB) RESPONSE (dB) 10 3 2 +25 C -40 C 1 -5 -10 -15 -20 0 20 22 24 26 28 FREQUENCY (GHz) 30 32 34 15 20 25 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 31 HMC268LM1 v03.1201 MICROWAVE CORPORATION SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz Output IP3 vs. Temperature 30 20 THIRD ORDER INTERCEPT (dBm) 1 Output P1dB vs. Temperature 18 -40C P1dB OUTPUT (dBm) AMPLIFIERS - SMT 16 +25C 14 12 10 8 +85C 6 4 2 -40C 25 20 +25C 15 +85C 10 0 20 22 24 26 28 30 20 32 22 24 26 28 FREQUENCY (GHz) FREQUENCY (GHz) PSAT vs. Temperature 20 +25C 18 16 Psat (dBm) 14 -40C 12 +85C 10 8 6 4 2 0 20 22 24 26 28 30 32 FREQUENCY (GHz) 1 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 30 32 MICROWAVE CORPORATION v03.1201 HMC268LM1 SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz Absolute Maximum Ratings +4.5 Vdc Supply Current (ldd) 50 mA Gate Bias Voltage (Vgg1 & 2) -2.0 to 0.0 Vdc DC Gate Current (lgg1 & 2) 4 mA Input Power (RFin) (Vdd = +4V, RF power applied <1 sec) +15 dBm Channel Temperature (Tc) 175 °C Thermal Resistance ( jc) (Channel Backside) 289 °C/W Storage Temperature -65 to +150° C Operating Temperature -40 to +85° C AMPLIFIERS - SMT 1 Supply Voltage (Vdd) Outline Drawing Pin Function 1 GND 2 Vdd 3 GND 4 RF OUT 5 GND 6 Vgg2 7 Vgg1 8 RF IN 1. 2. 3. 4. 5. 6. MATERIAL: PLASTIC PLATING: GOLD OVER NICKEL. DIMENSIONS ARE IN INCHES (MILLIMETERS). ALL TOLERANCES ARE ±0.005 (±0.13). ALL GROUNDS MUST BE SOLDERED TO THE PCB RF GROUND. • INDICATES PIN 1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 33 MICROWAVE CORPORATION HMC268LM1 v03.1201 SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz AMPLIFIERS - SMT 1 HMC268LM1 Evaluation PCB LM1 Evaluation PCB The grounded Co-Planar Wave Guide (CPWG) PCB input/output transitions allow use of Ground-Signal-Ground (GSG) probes for testing. Suggested probe pitch is 400um (16 mils). Alternatively, the board can be mounted in a metal housing with 2.4 mm coaxial connectors. Evaluation Circuit Board Layout Design Details Layout Technique Micro Strip to CPWG Material Rogers 4003 with 1/2 oz, Cu Dielectric Thickness 0.008" (0.20 mm) Microstrip Line Width 0.018" (0.46 mm) CPWG Line Width 0.016" (0.41 mm) CPWG Line to GND Gap 0.005" (0.13 mm) Ground Via Hole Diameter 0.008" (0.13 mm) C1 100 pF Capacitor, 0402 Pkg. C2 10,000 pF Capacitor, 1206 Pkg. LM1 Package Mounted to Evaluation PCB 1 - 34 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] MICROWAVE CORPORATION v03.1201 HMC268LM1 SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz 1 AMPLIFIERS - SMT Suggested LM1 PCB Land Pattern Tolerance: ± 0.003” (± 0.08 mm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 35 HMC268LM1 v03.1201 MICROWAVE CORPORATION SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz AMPLIFIERS - SMT 1 HMC268LM1 General Biasing & Application Circuit Optimal biasing of the HMC268LM1 SMT two stage low noise amplifier Vdd, Vgg1 & Vgg2 DC ports is described below. The LNA schematic is repeated below. Note the recommended addition of the external bypass chip capacitors. For additional general MMIC amplifier biasing guidance, please refer to the Hittite Microwave “MMIC Amplifier Biasing Procedure” found on page 8-8 or on www.hittite.com under the Application Note section. Vdd (Pin 2) C2 C1 50 W 25 W RF IN (PIN 8) Recommended Component Values RF OUT (PIN 4) Vds1 Vgg 1 (Pin 7) 100 pF C2 10,000 pF Vds2 C2 C1 C1 C1 C2 Vgg 2 (Pin 6) IMPORTANT DC LIMITS! When biasing the HMC268LM1 please note the following: A) Do not exceed 3.5 Vdc on internal circuit nodes Vds1 and Vds2 (internal Drain to Source voltages). Calculate the Vds1 & 2 voltages from the LNA schematic above. B) Do not bias Vdd, Vgg1 & Vgg2 DC ports in such a way that Vgs becomes a positive voltage (internal Gate to Source voltage). HMC268LM1 Biasing Schemes for Performance Trade-Offs The biasing may be adjusted slightly to achieve either low noise with lowest DC power consumption or low noise with highest output power. Be sure to adhere to the IMPORTANT DC LIMITS above while optimizing performance. A) Low Noise and Low Power Consumption: Vdd = 3.5 Vdc @ ldd = 30 mA. Set Vgg1 = Vgg2. B) Low Noise and High Output Power: Vdd = 4.0 Vdc @ ldd = 45 mA. Utilizing Vgg1 & Vgg2 nominal bias is obtained for a typical ldd current of 30 mA for the second or “output” stage and 15 mA for the first stage. The first step to bias the amplifier is to tune the Vgg1 = -1.0 Vdc and Vgg2 to drive 30 mA for the full amplifier. Then Vgg1 is reduced to obtain ldd = 45 mA of current for the amplifier. 1 - 36 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] MICROWAVE CORPORATION HMC268LM1 v03.1201 SMT MMIC LOW NOISE AMPLIFIER, 20 - 32 GHz HMC268LM1 Recommended SMT Attachment Technique Follow these precautions to avoid permanent damage: Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. LM1 devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. TEMPERATURE (0C) The HMC LM1 package was designed to be compatible with high volume surface mount PCB assembly processes. The LM1 package requires a specific mounting pattern to 225 allow proper mechanical attachment and to optimize electrical 200 performance at millimeterwave frequencies. The PCB layout 175 pattern can be found on each LM1 product data sheet. It can 150 also be provided as an electronic drawing upon request from Hittite Sales & Application Engineering. 125 100 75 50 25 0 1 2 3 4 5 6 7 8 TIME (min) Static Sensitivity: Follow ESD precautions to protect against Recommended solder reflow profile ESD strikes. for HMC LM1 SMT package General Handling: Handle the LM1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoid damaging the RF, DC, & ground contacts on the package bottom. Do not apply excess pressure to the top of the lid. Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is not recommended. Conductive epoxy attachment is not recommended. AMPLIFIERS - SMT 1 Preparation & Handling of the LM1 Millimeterwave Package for Surface Mounting Solder Paste Solder paste should be selected based on the user’s experience and should be compatible with the metallization systems used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes. Solder Paste Application Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical & electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies. Solder Reflow The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder reflow profile is suggested above. Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies. The thermocouple should be moved to various positions on the board to account for edge and corner effects and varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the location of the device. Follow solder paste and oven vendor’s recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to evaporate and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to withstand a peak temperature of 2350C for 15 seconds. Verify that the profile will not expose the device to temperatures in excess of 2350C. Cleaning A water-based flux wash may be used. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 37