HMC278MS8G v02.1201 MICROWAVE CORPORATION 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz AMPLIFIERS - SMT 1 Typical Applications Features The HMC278MS8G is ideal for: P1dB Output Power: +20 dBm • PCS/3G & WLAN Single Supply: +3V to +5V • MMDS & ISM Radios Ultra Small 8 Lead MSOP Package • HomeRF & BLUETOOTH Functional Diagram General Description The HMC278MS8G is a 100mW GaAs MMIC medium power amplifier covering 1.7 to 3 GHz. The device is packaged in a low cost, surface mount 8 lead MSOP plastic package with an exposed base paddle for improved RF ground and thermal dissipation. The self-biased amplifier provides 21 dB of gain and +20 dBm P1dB output power while operating from a single positive supply of Vdd= +5V @ 130 mA. At Vdd = +3V the gain is 19 dB with a P1dB of +16dBm. With RF I/Os matched to 50 Ohm, external component requirements are minimal. At a height of 0.040” (1.0mm), the MSOP8 package is ideal for low profile portable wireless devices. Use the HMC278MS8G with the HMC309MS8 integrated LNA/TxRx switch front-end for BLUETOOTH Class I, HomeRF, 802.11 WLAN, and ISM 2.4 GHz radios. Electrical Specification, TA = +25° C, As a Function of Vdd Vdd = +5V Vdd = +5V Vdd = +3V Parameter Min. Frequency Range Gain Max. Min. 1.7 - 3.0 15 Gain Flatness (Over Any 200 MHz BW) 20 Typ. Max. Min. 2.3 - 2.5 25 16 ± 0.7 21 Typ. Max. 2.3 - 2.5 25 15 ± 0.5 19 Units GHz 23 dB ± 0.5 dB Input Return Loss 5 10 7 10 7 10 dB Output Return Loss 6 10 7 10 7 10 dB Reverse Isolation 46 52 48 52 48 52 dB 13.5 19 16.5 20 12.5 16 dBm S a t u r a t e d O u t p u t Po w e r ( P s a t ) 16 21 19 22 15 18 dBm Output Third Order Intercept (IP3) 26 32 29 32 28 32 dBm 6 dB Output Power for 1 dB Compression (P1dB) Noise Figure 6 Supply Current (I d d) 1 - 38 Typ. 130 6 165 130 165 125 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 140 mA HMC278MS8G v02.1201 MICROWAVE CORPORATION 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz Broadband Gain & GaAs PUMPED Return LossMMIC @ Vdd SUB-HARMONICALLY = +5V P1dB vs. VddMIXER Bias 25 25 20 23 5 0 -5 17 15 13 11 Vdd=+5V -10 9 -15 7 1 1.5 2 2.5 3 3.5 4 4.5 5 1.5 5 Vdd=+3V 2 FREQUENCY (GHz) Gain vs. Temperature @ Vdd = +5V 22 22 20 20 GAIN (dB) 24 18 16 +25C +85C -40C 16 +25C +85C -40C 12 2 2.5 3 10 1.5 3.5 2 FREQUENCY (GHz) 2.5 3 3.5 FREQUENCY (GHz) Input & Output Return Loss vs. Vdd Bias Reverse Isolation vs. Vdd Bias 0 0 @ Vdd= +3V -10 @ Vdd= +5V ISOLATION (dB) -5 -10 -15 -20 1.5 3.5 18 14 12 10 1.5 3 Gain vs. Temperature @ Vdd = +3V 24 14 2.5 FREQUENCY (GHz) AMPLIFIERS - SMT 10 P1dB (dBm) RESPONSE (dB) 19 S11 S21 S22 -20 RETURN LOSS (dB) 1 21 15 GAIN (dB) 17 - 25 GHz 2.5 FREQUENCY (GHz) -30 -40 -50 S11 @ Vdd=+5V S22 @ Vdd=+5V S11 @ Vdd=+3V S22 @ Vdd=+3V 2 -20 -60 3 3.5 -70 1.5 2 2.5 3 3.5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 39 HMC278MS8G v02.1201 MICROWAVE CORPORATION 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz Power Compression @ 2.5 GHz, Vdd = +5V 24 24 22 22 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 20 18 16 14 12 10 8 6 Pout (dBm) Gain (dB) PAE (%) 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 20 18 16 14 12 10 8 6 Pout (dBm) Gain (dB) PAE (%) 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 8 10 PSAT vs. Temperature @ Vdd = +5V 25 23 23 21 21 Psat (dBm) 19 17 15 13 11 +25C +85C -40C 9 2.5 6 8 10 3 17 15 13 11 +25C +85C -40C 7 5 1.5 3.5 2 2.5 3 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd = +5V GH GH 2.0 2.5 3.0 -40 C 32.7 32.4 29.4 +25 0C 32.5 31.9 29.1 +85 0C 32.7 31.4 28.5 0 All levels in d m 1 - 40 4 19 9 7 2 2 P1dB vs. Temperature @ Vdd = +5V 25 5 1.5 0 INPUT POWER (dBm) INPUT POWER (dBm) OUTPUT P1dB (dBm) AMPLIFIERS - SMT 1 Power Compression @ 2.0 GHz, Vdd = +5V For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 3.5 HMC278MS8G v02.1201 MICROWAVE CORPORATION 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz Power Compression @ 2.5 GHz, Vdd = +3V 24 24 22 22 20 18 16 14 12 10 8 6 Pout (dBm) Gain (dB) PAE (%) 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 20 18 16 14 12 10 8 6 Pout (dBm) Gain (dB) PAE (%) 4 2 0 -20 -18 -16 -14 -12 -10 -8 8 INPUT POWER (dBm) 23 21 21 OUTPUT P1dB (dBm) 25 23 19 Psat (dBm) -4 -2 0 2 4 6 8 P1dB vs. Temperature @ Vdd = +3V 25 17 15 13 11 +25C +85C -40C 19 17 15 13 11 +25C +85C -40C 9 7 5 1.5 -6 FREQUENCY (GHz) PSAT vs. Temperature @ Vdd = +3V 9 1 AMPLIFIERS - SMT Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2.0 GHz, Vdd = +3V 7 2 2.5 3 5 1.5 3.5 2 FREQUENCY (GHz) 2.5 3 3.5 FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd = +3V 2.0 2.5 3.0 -40 C 27.8 27.8 25.7 +25 0C 27.7 27.5 25.5 +85 0C 27.3 26.9 24.6 0 All levels in d m For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 41 v02.1201 MICROWAVE CORPORATION HMC278MS8G 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz AMPLIFIERS - SMT 1 Absolute Maximum Ratings Supply Voltage (Vdd) +8 Vdc Input Power (RFin)(Vdd = +5V) +10 dBm Channel Temperature (Tc) 175 °C Thermal Resistance ( jc) (Channel Backside) 65 °C/W Storage Temperature -65 to +150° C Operating Temperature -55 to +85° C Note: 100 pF bypass capacitor to ground on Vdd line is recommended. Outline Drawing 1. MATERIAL: A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC. B. LEADFRAME & PADDLE MATERIAL: COPPER ALLOY 2. PLATING: LEAD & PADDLE - TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETER). UNLESS OTHERWISE SPECIFIED, ALL TOL. ARE ± 0.005 (± 0.13). 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 1 - 42 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] HMC278MS8G v02.1201 MICROWAVE CORPORATION 100 mW MEDIUM POWER GaAs MMIC AMPLIFIER, 1.7 - 3.0 GHz 1 AMPLIFIERS - SMT Recommended PCB Layout for HMC278MS8G The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. Evaluation Circuit Board Layout Design Details Item Description J1, J2 PC Mount SMA Connector J3, J4 DC Pin C1 10,000 pF Capacitor, 0603 Pkg. U1 HMC278MS8G Amplifier PCB* 103600 Evaluation Board *Circuit Board Material: Roger 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 1 - 43