HMC300LM1 v02.1201 AMPLIFIERS - SMT 8 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 25.5 - 33.5 GHz applications: SMT mmWave Package • LMDS Broadband Performance • Microwave Radio Saturated Output Power: +24 dBm Gain > 15 dB Positive Supply: +5V to +7V Functional Diagram General Description The HMC300LM1 is a broadband surface mount medium power amplifier that operates between 25.5 and 33.5 GHz. A 0.25 um power pHEMT process is used to achieve efficient gain and output power performance. High volume surface mount re-flow assembly techniques may be used to mount the amplifier to the end user’s PCB. The LM1 package eliminates the need for wire bonding or die attach mounting. The amplifier provides 15 dB of gain and +24 dBm of saturated output power across various microwave radio bands. This millimeter wave amplifier requires no external RF matching components and minimal DC bypass components. The amplifier operates from a +6V Vdd and a 0.35V Vgg gate bias. Electrical Specifications, TA = +25° C, Vdd = +6V Parameter Min. Frequency Range Gain Typ. Max. 25.5 - 33.5 13 Gain Variation Over Temperature GHz 16 22 dB 0.06 0.07 dB/°C Input Return Loss 5 8 dB Output Return Loss 5 8 dB Reverse Isolation 35 50 dB Output 1 dB Compression (P1dB) 20 23 dBm Saturated Output Power (Psat) 21 24 dBm Output Third Order Intercept (IP3) (Two-tone Input Power = -5 dBm each tone) 21 26 dBm Supply Current (Idd)(Vdd = +6.0 Vdc)* 220 275 *Adjust Vgg 1 between -1.0 to 0V to achieve Idd = 220 mA typical. 8 - 28 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz 8 Gain vs. Temperature @ Vdd = +6V Broadband Gain & Return Loss 20 20 10 5 GAIN (dB) RESPONSE (dB) 15 S21 S11 S22 0 -5 15 10 -10 +25 C +85 C -40 C 5 -15 -20 -25 0 20 25 30 35 24 40 25 26 27 FREQUENCY (GHz) 0 -5 -5 RETURN LOSS (dB) RETURN LOSS (dB) 0 -10 +25 C +85 C -40 C -20 30 31 32 33 34 35 32 33 34 35 32 33 34 35 -10 +25 C -40 C +85 C -15 -20 24 25 26 27 28 29 30 31 32 33 34 35 24 25 26 27 FREQUENCY (GHz) THIRD ORDER INTERCEPT POINT (dBm) 25 20 15 +25 C +85 C -40 C 5 0 24 25 26 27 28 29 30 31 FREQUENCY (GHz) 29 30 31 Output IP3 vs. Temperature @ Vdd = +6V 30 10 28 FREQUENCY (GHz) P1dB Output Power vs. Temperature @ Vdd = +6V Output P1dB (dBm) 29 Output Return Loss vs. Temperature @ Vdd = +6V Input Return Loss vs. Temperature @ Vdd = +6V -15 28 FREQUENCY (GHz) AMPLIFIERS - SMT 25 25 32 33 34 35 35 30 25 20 15 +25 C +85 C -40 C 10 5 0 24 25 26 27 28 29 30 31 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 29 HMC300LM1 v02.1201 8 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz Gain vs. Vdd Input Return Loss vs. Vdd 0 RETURN LOSS (dB) 20 GAIN (dB) AMPLIFIERS - SMT 25 15 10 Vdd=+5V Vdd=+6V Vdd=+7V 5 0 -5 -10 Vdd=+5V Vdd=+6V Vdd=+7V -15 -20 24 25 26 27 28 29 30 31 32 33 34 24 35 25 26 27 FREQUENCY (GHz) 28 29 30 31 32 33 34 35 32 33 34 35 32 33 34 35 FREQUENCY (GHz) Output Return Loss vs. Vdd P1dB Output Power vs. Vdd 0 30 Output P1dB (dBm) RETURN LOSS (dB) 25 -5 -10 Vdd=+5V Vdd=+6V Vdd=+7V -15 20 15 Vdd=+5V Vdd=+6V Vdd=+7V 10 5 -20 0 24 25 26 27 28 29 30 31 32 33 34 35 24 25 26 27 FREQUENCY (GHz) PSAT Output Power vs. Vdd THIRD ORDER INTERCEPT POINT (dBm) Psat (dBm) 25 20 Vdd=+5V Vdd=+6V Vdd=+7V 10 5 0 24 25 26 27 28 29 30 31 FREQUENCY (GHz) 8 - 30 29 30 31 IP3 vs. Vdd 30 15 28 FREQUENCY (GHz) 32 33 34 35 35 30 25 20 Vdd=+5V Vdd=+6V Vdd=+7V 15 10 5 0 24 25 26 27 28 29 30 31 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz 8 Drain Bias Voltage (Vdd1, Vdd2) +5.0 Vdc Drain Bias Current (Idd) 500 mA Gate Bias Voltage (Vgg1) -2.0 to +0.4 Vdc RF Input Power (RFin)(Vdd = +6.0 Vdc) +17 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 15.03 mW/°C above 85 °C) 0.977 W Thermal Resistance (channel to ground paddle) 67 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85°C AMPLIFIERS - SMT Absolute Maximum Ratings %,%#42/34!4)#3%.3)4)6%$%6)#% /"3%26%(!.$,).'02%#!54)/.3 Outline Drawing Pin Function 1 GND 2 Vdd1 3 Vdd2 4 RF OUT 5 GND 6 Vgg1 NOTES: 1. MATERIAL: PLASTIC 2. PLATING: GOLD OVER NICKEL 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. ALL TOLERANCES ARE ± 0.005 [± 0.13]. 7 GND 8 RF IN 5. ALL GROUNDS MUST BE SOLDERED TO PCB RF GROUND. 6. • INDICATES PIN 1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 31 HMC300LM1 v02.1201 Evaluation PCB AMPLIFIERS - SMT 8 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz The grounded Co-Planar Wave Guide (CPWG) PCB input/output transitions allow use of Ground-Signal-Ground (GSG) probes for testing. Suggested probe pitch is 400μm (16 mils). Alternatively, the board can be mounted in a metal housing with 2.4 mm coaxial connectors. Evaluation Circuit Board Layout Design Details Layout Technique Micro Strip to CPWG Material Rogers 4003 with 1/2 oz. Cu Dielectric Thickness 0.008” (0.20 mm) Microstrip Line Width 0.018” (0.46 mm) CPWG Line Width 0.016” (0.41 mm) CPWG Line to GND Gap 0.005” (0.13 mm) Ground Via Hole Diameter 0.008” (0.20 mm) C1 100 pF Capacitor, 0402 Pkg. C2 33,000 pF Capacitor, 1206 Pkg. LM1 Package Mounted to Evaluation PCB 8 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC300LM1 v02.1201 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz 8 AMPLIFIERS - SMT Suggested LM1 PCB Land Pattern Tolerance: ± 0.003” (± 0.08 mm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 33 HMC300LM1 v02.1201 Application Circuit AMPLIFIERS - SMT 8 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz Recommended Component Values 8 - 34 C1 100 pF C2 33,000 pF Note: Vgg1 should be applied to Pin 6 to provide appropriate bias level to Amplifier. Voltage level should be adjusted until nominal Idd of 220 mA is reached. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC300LM1 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 25.5 - 33.5 GHz 8 Recommended SMT Attachment Technique Preparation & Handling of the LM1 Millimeterwave Package for Surface Mounting 225 200 175 0 TEMPERATURE ( C) The HMC LM1 package was designed to be compatible with high volume surface mount PCB assembly processes. The LM1 package requires a specific mounting pattern to allow proper mechanical attachment and to optimize electrical performance at millimeterwave frequencies. This PCB layout pattern can be found on each LM1 product data sheet. It can also be provided as an electronic drawing upon request from Hittite Sales & Application Engineering. 150 125 100 75 Follow these precautions to avoid permanent damage: 50 Cleanliness: Observe proper handling procedures to 25 ensure 0 1 2 3 4 5 6 7 8 clean devices and PCBs. LM1 devices should remain in TIME (min) their original packaging until component placement to ensure no contamination or damage to RF, DC & ground Recommended solder reflow profile contact areas. for HMC LM1 SMT Package Static Sensitivity: Follow ESD precautions to protect against ESD strikes. General Handling: Handle the LM1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoid damaging the RF, DC, & ground contacts on the package bottom. Do not apply excess pressure to the top of the lid. Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is not recommended. Conductive epoxy attachment is not recommended. AMPLIFIERS - SMT v02.1201 Solder Paste Solder paste should be selected based on the user’s experience and should be compatible with the metallization systems used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes. Solder Paste Application Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical & electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies. Solder Reflow The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder reflow profile is suggested above. Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies. The thermocouple should be moved to various positions on the board to account for edge and corner effects and varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the location of the device. Follow solder paste and oven vendor’s recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to evaporate and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to withstand a peak temperature of 235°C for 15 seconds. Verify that the profile will not expose device to temperatures in excess of 235°C. Cleaning A water-based flux wash may be used. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 35