HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Typical Applications Features The HMC740ST89E is ideal for: P1dB Output Power: +18 dBm • Cellular/3G & WiMAX/4G Gain: 15 dB • Fixed Wireless & WLAN Output IP3: +40 dBm • CATV, Cable Modem & DBS Cascadable 50 Ohm I/Os • Microwave Radio & Test Equipment Single Supply: +5V • IF & RF Applications Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network Functional Diagram General Description The HMC740ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18 dBm output power. The HMC740ST89E offers 15 dB of gain with a +40 dBm output IP3 at 100 MHz, and can operate directly from a +5V supply. The HMC740ST89E exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components. Electrical Specifi cations, Vcc = 5V, TA = +25° C Parameter Min. Frequency Range Gain Max. Min. 0.05 - 1 12 15 Gain Flatness ±0.1 Gain Variation over Temperature 0.003 11 Typ. Max. 0.05 - 3 GHz 15 dB ±0.7 0.006 Units 0.003 dB 0.006 dB/ °C Input Return Loss 18 15 dB Output Return Loss 18 18 dB Reverse Isolation 20 21 dB 17 dBm Output Power for 1 dB Compression (P1dB) 9 - 174 Typ. 15.5 18 14.5 Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) 38 32 dBm Noise Figure 3.5 3.5 dB Supply Current (Icq) 88 88 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz IF Band Performance Gain & Return Loss Gain vs. Temperature 9 20 20 15 10 0 -5 -10 +25C +85C -40C 10 -15 5 -20 -25 -30 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 Noise Figure vs. Temperature 0 0.4 0.6 FREQUENCY (GHz) 0.8 1 0.8 1 Output IP3 vs. Temperature 45 8 7 +25C +85C -40C 6 40 5 IP3 (dBm) NOISE FIGURE (dB) 0.2 4 3 35 +25C +85C -40C 30 2 25 1 0 20 0 0.2 0.4 0.6 0.8 0 1 0.2 0.4 0.6 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Vcc Output IP3 vs. Output Power 45 50 DRIVER & GAIN BLOCK AMPLIFIERS - SMT S21 S11 S22 GAIN (dB) RESPONSE (dB) 15 5 45 40 40 IP3 (dBm) IP3 (dBm) 35 35 30 30 25 100MHz 400MHz 1GHz 20 15 4.5V 5.0V 5.5V 25 10 5 0 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 -5 0 5 Pout (dBm) 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 15 9 - 175 HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Broadband Performance 9 Gain & Return Loss Gain vs. Temperature 20 20 15 10 0 GAIN (dB) RESPONSE (dB) S21 S11 S22 -5 -10 -15 5 -25 -30 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 0 3 Gain vs. Vcc 0.5 1 2.5 3 0 +25C +85C -40C -5 RETURN LOSS (dB) 15 GAIN (dB) 1.5 2 FREQUENCY (GHz) Input Return Loss vs. Temperature 20 4.5V 5.0V 5.5V 10 5 -10 -15 -20 -25 -30 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Output Return Loss vs. Temperature 0 0 -5 -5 RETURN LOSS (dB) 0 +25C +85C -40C -10 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 2.5 3 Input Return Loss vs. Vcc -15 -20 -25 4.5V 5.0V 5.5V -10 -15 -20 -25 -30 -30 0 9 - 176 +25C +85C -40C 10 -20 RETURN LOSS (dB) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 15 5 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Noise Figure vs. Temperature 0 7 NOISE FIGURE (dB) RETURN LOSS (dB) -5 4.5V 5.0V 5.5V -10 -15 -20 -25 6 5 4 3 2 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) Reverse Isolation vs. Temperature Noise Figure vs. Vcc 0 8 6 REVERSE ISOLATION (dB) 7 NOISE FIGURE (dB) +25C +85C -40C 1 -30 4.5V 5.0V 5.5V 5 4 3 2 1 0 -5 +25C +85C -40C -10 -15 -20 -25 -30 0 0.5 1 1.5 2 2.5 0 3 0.5 1 FREQUENCY (GHz) 1.5 2 FREQUENCY (GHz) 2.5 3 2.5 3 Output IP3 vs. Temperature Reverse Isolation vs. Vcc 50 0 -5 40 4.5V 5.0V 5.5V -10 IP3 (dBm) REVERSE ISOLATION (dB) 9 8 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Output Return Loss vs. Vcc -15 30 +25C +85C -40C 20 -20 10 -25 -30 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0.5 1 1.5 2 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 177 HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz 140 40 120 CURRENT (mA) IP3 (dBm) 50 30 4.5V 5.0V 5.5V 20 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 100 80 40 4.5 3 P1dB vs. Temperature 20 15 15 +25C +85C -40C 10 4.75 5 VOLTAGE (V) 5.25 5.5 Psat vs. Temperature 20 Psat (dBm) P1dB (dBm) +25C +85C -40C 60 5 +25C +85C -40C 10 5 0 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 Power Compression @ 500 MHz 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 4 8 Power Compression @ 2 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 Pout Gain PAE -5 -10 -20 9 - 178 Current vs. Temperature 10 Pout (dBm), GAIN (dB), PAE (%) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 Output IP3 vs. Vcc -17 -14 -11 -8 -5 -2 INPUT POWER (dBm) 1 4 7 15 10 5 0 Pout Gain PAE -5 -10 -20 -16 -12 -8 -4 0 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Absolute Maximum Ratings +5.5 Vdc RF Input Power (RFIN) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 7.14 mW/°C above 85 °C) 0.46 W Thermal Resistance (junction to lead) 140 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HMB) Class 1C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 9 DRIVER & GAIN BLOCK AMPLIFIERS - SMT Collector Bias Voltage (Vcc) Package Information Part Number Package Body Material Lead Finish HMC740ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H740 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 179 HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Pin Descriptions DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 9 - 180 Pin Number Function Description 1 IN This pin is DC coupled. An off chip DC blocking capacitor is required. 3 OUT RF output and DC Bias (Vcc) for the output stage. 2, 4 GND These pins and package bottom must be connected to RF/DC ground. Interface Schematic Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC740ST89E v00.0209 InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Evaluation PCB List of Materials for Evaluation PCB 124390 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J4 DC Pin C1, C2 470 pF Capacitor, 0402 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 1000 pF Capacitor, 0603 Pkg. C5 2.2 μF Capacitor Tantalum L1 820 nH Inductor, 0603 Pkg. U1 HMC740ST89E PCB [2] 119392 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. DRIVER & GAIN BLOCK AMPLIFIERS - SMT 9 [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 9 - 181