HITTITE HMC

HMC-XTB106
v01.1207
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Typical Applications
Features
This HMC-XTB106 is ideal for:
Conversion Loss: 19 dB
• FCC E-Band Communication Systems
Input Drive: +13 dBm
• Short-Haul / High Capacity Radios
Passive: No DC Bias Required
• Automotive Radar
Die Size: 1.1 x 1.45 x 0.1 mm
• Test & Measurement Equipment
General Description
Functional Diagram
The HMC-XTB106 is a monolithic X3 Passive Frequency Multiplier which utilizes GaAs Shottky Diode
technology, and exhibits low conversion loss and high
Fo isolation. This wideband X3 multiplier requires
no DC power, and is targeted to high volume applications where frequency X3 of a lower frequency is
more economical than directly generating a higher
frequency. All bond pads and the die backside are
Ti/Au metallized and the Shottky diode devices are
fully passivated for reliable operation. The HMCXTB106 Passive X3 MMIC is compatible with
conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making
it ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in a
50 Ohm environment and contacted with RF probes.
Electrical Specifi cations*, TA = 25 °C, Pin = +13 dBm
Parameter
Min.
Typ.
Max.
24 - 30
GHz
Frequency Range Output
72 - 90
GHz
19
dB
Conversion Loss
*Unless otherwise indicated, all measurements are from probed die
2 - 80
Units
Frequency Range Input
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-XTB106
v01.1207
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Output Power
-17
0
-18
-1
-19
-20
-21
-22
-23
2
-2
-3
-4
-5
-6
-7
-8
-24
24
25
26
27
28
29
INPUT FREQUENCY (GHz)
30
31
24
25
26
27
28
29
INPUT FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
30
31
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
X3 OUPUT POWER (dBm)
X3 CONVERSION LOSS (dB)
x3 Conversion Loss
2 - 81
HMC-XTB106
v01.1207
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Absolute Maximum Ratings
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2
RF Input Level
+18 dBm
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
WP - 3
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
2 - 82
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-XTB106
v01.1207
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Pad Descriptions
Function
Description
1
RFIN
This pad is DC coupled and matched to 50 Ohms.
2
RFOUT
This pad is DC coupled and matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
Pad Number
2 - 83
HMC-XTB106
v01.1207
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Assembly Diagram
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2
2 - 84
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-XTB106
v01.1207
GaAs MMIC PASSIVE x3 FREQUENCY
MULTIPLIER, 24 - 30 GHz INPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
2
Wire Bond
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 85