PTFA181001GL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band. Features include input and output matching, and thermallyenhanced open-cavity package with copper flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing 35 30 Efficiency 25 IM3 20 -45 ACPR 15 -50 10 -55 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -30 -40 5 34 36 38 40 42 44 PTFA181001HL Package PG-64248-2 Features Two-carrier WCDMA Drive-up -35 PTFA181001GL Package PG-63248-2 46 Average Output Power (dBm) • Thermally-enhanced, plastic open-cavity (EPOC™) package with copper flange, Pb-free and RoHS compliant • Broadband internal matching • Typical EDGE performance at 1880 MHz, 28 V - Average output power = 45 W - Linear Gain = 16.5 dB - Efficiency = 36% - EVM RMS = 1.8% • Typical CW performance, 1880 MHz, 28 V - Output power at P–1dB = 120 W - Gain 15.5 dB - Efficiency = 52% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability • Capable of handling 10:1 VSWR @ 28 V, 100 W (CW) output power RF Characteristics EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 45 W (AVG), ƒ = 1880 MHz Characteristic Symbol Min Typ Max Unit RMS EVM — 1.8 — % Modulation Spectrum @ 400 KHz ACPR — –61 — dBc Modulation Spectrum @ 600 KHz ACPR — –73 — dBc Gain Gps — 16.5 — dB Drain Efficiency ηD — 36 — % Error Vector Magnitude All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 03, 2009-04-01 PTFA181001GL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 750 mA, POUT = 100 W (PEP), ƒ = 1850 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 16 16.5 — dB Drain Efficiency ηD 39 41 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.085 — Ω Operating Gate Voltage VDS = 28 V, ID = 750 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD Above 25°C derate by 408 W 2.33 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 100 W CW) RθJC 0.43 °C/W Ordering Information Type and Version Package Type Package Description Shipping Marking PTFA181001GL V1 PG-63248-2 Thermally-enhanced, plastic open-cavity, slotted flange, single-ended Tray PTFA181001GL *See Infineon distributor for future availability. Data Sheet 2 of 10 Rev. 03, 2009-04-01 PTFA181001GL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Edge EVM and Modulation Spectrum vs. Quiescent Current EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz VDD = 28V, ƒ = 1880 MHz, POUT = 46.5 dBm -20 -20 EVM -30 2 -40 1.8 -50 400 KHz 1.6 -60 1.4 -70 1.2 -80 600 KHz 1 0.65 0.70 0.75 0.80 0.85 45 Efficiency -30 -40 35 -50 -60 25 -70 20 -80 10 -90 5 37 39 41 43 45 47 49 Output Power (dBm) EDGE EVM Performance Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz (as measured in a broadband circuit) VDD = 28 V, IDQ = 750 mA, ƒ1 =1879 MHz, ƒ2 = 1880 MHz Efficiency -20 40 -25 6 35 5 30 4 25 3 20 EVM 2 15 1 0 39 41 43 45 47 3rd Order -30 IMD (dBc) 7 45 Drain Efficiency (%) EVM RMS (average %) . 15 600 kHz -100 -90 0.90 8 -35 -40 5th -45 -50 7th -55 10 -60 5 -65 37 49 39 41 43 45 47 49 Output Power, Avg. (dBm) Output Power (dBm) Data Sheet 30 400 kHz Quiescent Current (A) 37 40 Drain Efficiency (%) 2.2 Modulation Spectrum (dB) -10 Modulation Spectrum (dBc) EVM RMS (average %) . 2.4 3 of 10 Rev. 03, 2009-04-01 PTFA181001GL Confidential, Limited Internal Distribution Typical Performance (cont.) Broadband CW Performance (at P–1dB) IM3 vs. Output Power at Selected Biases VDD = 28 V, IDQ = 750 mA VDD = 28 V, ƒ 1 = 1879, ƒ 2 = 1880 MHz 19 -20 60 -25 55 17 50 Output Power 16 15 45 40 Gain 14 1805 375 mA -30 IMD (dBc) Gain (dB) 18 Efficiency (%), Output Power (dBm) Efficiency -35 -40 1125 mA -45 -50 750 mA -55 -60 1818 1831 1844 1857 1870 35 1883 -65 37 39 Frequency (MHz) 45 47 CW Broadband Performance Power Sweep VDD = 28 V, IDQ = 750 mA, POUT = 47 dBm VDD = 28 V, ƒ = 1880 MHz 40 30 Gain 45 40 10 Efficiency 0 Return Loss 30 25 20 1805 20 1818 1831 1844 1857 1870 -10 16.5 Power Gain (dB) 50 35 49 17.0 Return Loss (dB) Gain (dB), Efficiency (%) 43 Output Power, Avg. (dBm) 55 IDQ = 1125 mA 16.0 15.5 IDQ = 750 mA 15.0 -20 14.5 -30 1883 14.0 IDQ = 375 mA 36 Frequency (MHz) Data Sheet 41 38 40 42 44 46 48 50 52 Output Power (dBm) 4 of 10 Rev. 03, 2009-04-01 PTFA181001GL Confidential, Limited Internal Distribution Typical Performance (cont.) Gain & Efficiency vs. Output Power Output Power (at 1 dB Compression) vs. Supply Voltage VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz IDQ = 750 mA, ƒ =1880 MHz 18 65 Gain (dB) 16 45 15 35 14 25 Efficiency 15 13 Output Power (dBm) 55 Gain Drain Efficiency (%) 17 52.0 36 38 40 42 44 46 48 50 51.0 50.5 50.0 49.5 5 12 51.5 24 52 26 Voltage normalized to typical gate voltage, series show current VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz TCASE = 25°C TCASE = 90°C 30 -30 -40 ACP FC – 0.75 MHz 20 -50 15 -60 10 5 -70 ACPR FC + 1.98 MHz 0 Normalized Bias Voltage (V) -20 Adj. Ch. Power Ratio (dBc) Drain Efficiency (%) -10 Efficiency 25 35 37 39 41 43 45 47 0.15 A 1.02 0.44 A 1.01 0.73 A 1.10 A 1.00 2.20 A 0.99 3.30 A 0.98 4.41 A 0.97 5.51 A 0.96 0 20 40 60 80 100 Case Temperature (°C) Output Power (dBm), Avg. Data Sheet 1.03 0.95 -20 -80 33 32 Bias Voltage vs. Temperature IS-95 CDMA Performance 35 30 Supply Voltage (V) Output Power (dBm) 40 28 5 of 10 Rev. 03, 2009-04-01 PTFA181001GL Confidential, Limited Internal Distribution Broadband Circuit Impedance 0.3 Z Load 0.1 0 .0 D Z Source 0.2 Z0 = 50 Ω Z Source G 1805 MHz 1880 MHz S 0.1 1805 MHz 1880 MHz Z Load Ω MHz R jX R jX 1805 5.02 –6.23 1.52 –3.98 1830 4.91 –6.10 1.49 –3.97 1850 4.82 –6.13 1.47 –3.79 1860 4.78 –6.20 1.46 –3.75 1880 4.70 –6.36 1.44 –3.67 <- - Z Source Ω Frequency Z Load 0. 2 See next page for reference circuit Data Sheet 6 of 10 Rev. 03, 2009-04-01 PTFA181001GL Confidential, Limited Internal Distribution Reference Circuit C1 0.001µF R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001µF R3 2K V C3 0.001µF R4 2K V R5 10 V R8 2K V R6 5.1K V C5 0.1µF C4 10µF 35V R7 5.1K V C6 1µF C7 0.01µF L1 VDD C8 10pF l5 C11 10pF R9 10 V l1 l3 l6 C14 10µF 50V C19 1.5pF DUT l2 C13 10µF 50V l8 l4 C9 10pF J1 C12 1µF l10 l7 l12 l11 C10 0.6pF C22 10pF l13 l14 l15 J2 C21 0.8pF C20 1.5pF l9 L2 V66100-G9222-D683-01-7606.dwg C15 10pF C16 1µF C17 10µF 50V C18 10µF 50V Reference circuit schematic for ƒ = 1880 MHz Circuit Assembly Information DUT PCB PTFA181001GL 0.76 mm [.030"] thick, εr = 4.5 LDMOS Transistor Rogers TMM4 2 oz. copper Microstrip Electrical Characteristics at 1880 MHz1 Dimensions: L x W (mm) Dimensions: L x W (in.) l1 l2 l3 l4 l5 l6 l7 l8, l9 l10 l11 (taper) l12 (taper) l13 l14 l15 0.322 0.172 0.016 0.024 0.273 0.019 0.044 0.298 0.039 0.037 0.033 0.055 0.058 0.327 λ, 50.0 Ω λ, 38.0 Ω λ, 11.4 Ω λ, 60.0 Ω λ, 60.0 Ω λ, 6.9 Ω λ, 6.9 Ω λ, 52.0 Ω λ, 4.9 Ω λ, 4.9 Ω / 10.3 Ω λ, 10.3 Ω / 41.2 Ω λ, 41.2 Ω λ, 41.2 Ω λ, 50.0 Ω 27.43 x 1.37 14.73 x 2.16 1.27 x 10.16 2.24 x 0.99 24.00 x 0.99 1.52 x 17.78 3.43 x 17.78 26.16 x 1.27 3.10 x 25.65 2.92 x 25.65 / 11.43 2.79 x 11.43 / 1.91 4.70 x 1.91 4.95 x 1.91 28.98 x 1.37 1.080 0.580 0.050 0.088 0.945 0.060 0.135 1.030 0.122 0.115 0.110 0.185 0.195 1.141 x 0.054 x 0.085 x 0.400 x 0.039 x 0.039 x 0.700 x 0.700 x 0.050 x 1.010 x 1.010 / 0.450 x 0.450 / 0.075 x 0.075 x 0.075 x 0.054 1Electrical characteristics are rounded. Data Sheet 7 of 10 Rev. 03, 2009-04-01 PTFA181001GL Confidential, Limited Internal Distribution Reference Circuit (cont.) R3 R5 C5 C4 R6 QQ1 C1 C3 R4 R2 C2 R1 R7 R8 C6 VD D L1 Q1 C11 C10 C7 C12 C19 C8 C13 C14 R9 C9 RF_IN RF_OUT C21 C22 C20 C17 C16 C18 C15 VD D L2 a 1 8 1 0 0 1 g h l _ c d _ 1 1 - 1 2 - 0 8 Reference circuit assembly diagram* (not to scale) Component Description Suggested Manufacturer P/N or Comment C1, C2, C3 C4 C5 C6, C12, C16 C7 C8, C9, C11, C15, C22 C10 C13, C14, C17, C18 C19, C20 C21 L1, L2 Q1 QQ1 R1 R2 R3, R8 R4 R5, R9 R6, R7 Capacitor, 0.001 µF Tantalum capacitor, 10 µF, 35 V Capacitor, 0.1 µF Capacitor, 1.0 µF Capacitor, 0.01 µF Ceramic capacitor, 10 pF Ceramic capacitor, 0.6 pF Tantalum capacitor, 10 µF, 50 V Ceramic capacitor, 1.5 pF Ceramic capacitor, 0.8 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip Resistor, 1.2k ohms Chip Resistor, 1.3k ohms Chip Resistor, 2k ohms Potentiometer, 2k ohms Chip Resistor, 10 ohms Chip Resistor 5.1k ohms Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics ATC ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key PCC1772CT-ND 399-1655-2-ND PCC104BCT-ND 920C105 200B 103 100B 100 100B 0R6 TPSE106K050R0400 100B 1R5 100B 0R8 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P10ECT-ND P5.1KECT-ND *Gerber files for this circuit available on request Data Sheet 8 of 10 Rev. 03, 2009-04-01 PTFA181001GL Confidential, Limited Internal Distribution Package Outline Specifications Package PG-63248-2 4.83±0.51 [.190±.020] 45° X 2.72 [45° X .107] CL 6. 45° X 1.78 [45° X .070] 2X R1.63 [R.064] 9.78 ± 0.08 [.385 ± .003] C L 3X R0.51+1.14 –0.25 [R.020+.045 –.010 ] 20.27 [.798] +0.25 3.63 –0.13 [.143+.010 –.005 ] C L 0.064 (.0025) –A– P G - 6 8 2 4 8 - 2 ( G ) _ p o _ 8 - 2 8 - 0 8 34.04 ± 0.08 [1.340 ± .003] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 5. Gold plating thickness: < 0.254 micron [< 10 microinch] 6. Tabs may protrude 0.13 [.005] max from body. 7. Pins: D = drain, S = source, G = gate. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 03, 2009-04-01 PTFA181001GL V1 Confidential, Limited Internal Distribution Revision History: 2009-04-01 2009-02-19, Data Sheet Previous Version: Data Sheet Page Subjects (major changes since last revision) 9, 10 Update package information. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS® is a registered trademark of Infineon Technologies AG. Edition 2009-04-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 03, 2009-04-01