PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1266 █ APPLICATIONS General Purpose Application. Switching Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………400mW 1―Emitter，E 2―Collector，C 3―Base，B VCBO——Collector-Base Voltage………………………………-50V VCEO——Collector-Emitter Voltage……………………………-50V V EBO ——Emitter-Base Voltage………………………………-5V IC——Collector Current………………………………………-150mA Ib——Base Current……………………………………………-50mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -50 V IC=-100μA, BVCEO Collector-Emitter Breakdown Voltage -50 V IC=-1mA, BVEBO Emitter-Base Breakdown Voltage -5 V IE=-10μA，IC=0 HFE（1） DC Current Gain 70 HFE（2） DC Current Gain 25 VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) IE=0 IB=0 VCE=-6V, IC=-2mA 400 VCE=-6V, IC=-150mA -0.3 V IC=-100mA, IB=-10mA Base-Emitter Saturation Voltage -1.1 V IC=-100mA, IB=-10mA ICBO Collector Cut-off Current -100 nA VCB=-50V, IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-5V, IC=0 fT Cob Current Gain-Bandwidth Product 7 MHz pF -0.1 80 Output Capacitance 4 █ hFE Classification O 70—140 Y 120—240 GR 200—400 VCE=-10V, IC=-10mA VCB=-50V, IE=0，f=1MHz Shantou Huashan Electronic Devices Co.,Ltd. H1266